2MX8 Search Results

2MX8 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DS90CP22MX-8/NOPB		Texas Instruments	800 Mbps 2x2 LVDS Crosspoint Switch 16-SOIC -40 to 85

2MX8 Price and Stock

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LEDIL CS15750_STRADA-2X2MX-8-T4-B LENS CLEAR ASYMMETRICAL SCREW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CS15750_STRADA-2X2MX-8-T4-B	Tray	52		1	1 $8.41 10 $8.41 100 $6.1025 1000 $4.17534 10000 $4.07898	Buy Now
Avnet Americas	CS15750_STRADA-2X2MX-8-T4-B	Tray			52	1 - 10 - 100 $3.9006 1000 $3.8218 10000 $3.8218	Buy Now
Mouser Electronics	CS15750_STRADA-2X2MX-8-T4-B					1 $8.41 10 $8.4 100 $6.09 1000 $4.17 10000 $4.07	Get Quote
Newark	CS15750_STRADA-2X2MX-8-T4-B	Bulk			52	1 - 10 - 100 $5.35 1000 $4.33 10000 $4.33	Buy Now
Avnet Silica	CS15750_STRADA-2X2MX-8-T4-B			7 Weeks	52	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	CS15750_STRADA-2X2MX-8-T4-B			7 Weeks	52	1 - 10 - 100 - 1000 - 10000 -	Buy Now
LEDIL CS15765_HB-2X2MX-8-WWW ASSY LENS SQUARE 4POS 90X90MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CS15765_HB-2X2MX-8-WWW	Tray	1		1	1 $8.13 10 $8.13 100 $4.92365 1000 $4.0586 10000 $3.975	Buy Now
Avnet Americas	CS15765_HB-2X2MX-8-WWW	Tray			52	1 - 10 - 100 $3.9006 1000 $3.8218 10000 $3.8218	Buy Now
Mouser Electronics	CS15765_HB-2X2MX-8-WWW					1 $8.08 10 $7.44 100 $4.93 1000 $4.05 10000 $3.97	Get Quote
Newark	CS15765_HB-2X2MX-8-WWW	Bulk			52	1 - 10 - 100 $5.35 1000 $4.33 10000 $4.33	Buy Now
Avnet Silica	CS15765_HB-2X2MX-8-WWW			7 Weeks	52	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	CS15765_HB-2X2MX-8-WWW			7 Weeks	52	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Maritex	CS15765_HB-2X2MX-8-WWW		3			1 $7.04 10 $6.577 100 $4.355 1000 $3.723 10000 $3.723	Buy Now
Texas Instruments LM3622MX-8.2 IC BATT CONTRL LI-ION 2CEL 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LM3622MX-8.2	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.37556	Buy Now
Texas Instruments LM3622MX-8.2-NOPB IC BATT CONTRL LI-ION 2CEL 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LM3622MX-8.2-NOPB	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	LM3622MX-8.2-NOPB	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	LM3622MX-8.2-NOPB	Digi-Reel			1	1 $3.01 10 $3.01 100 $3.01 1000 $3.01 10000 $3.01	Buy Now
Texas Instruments DS90CP22MX-8-NOPB IC CROSSPOINT SW 1 X 2:2 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DS90CP22MX-8-NOPB	Digi-Reel			1	1 $6.13 10 $6.13 100 $6.13 1000 $6.13 10000 $6.13	Buy Now
	DS90CP22MX-8-NOPB	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $3.46203	Buy Now
	DS90CP22MX-8-NOPB	Cut Tape			1	1 $6.13 10 $6.13 100 $6.13 1000 $6.13 10000 $6.13	Buy Now

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2MX8 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 32MB 168PIN PC66 SDRAM DIMM With 2M X 8 3.3VOLT TS4MLS64V1P2N Description Placement The TS4MLS64V1P2N is a 4M bit x 64 Synchronous Dynamic RAM, high density for PC-66. The TS4MLS64V1P2N consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a	Original	PDF	168PIN TS4MLS64V1P2N TS4MLS64V1P2N PC-66. 16pcs 400mil 168-pin
1MX16 Abstract: CCIR601 CCIR656 PBGA388 Text: STPC CONSUMER-S PC Compatible Embeded Microprocessor • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ POWERFUL x86 PROCESSOR 64-BIT 66MHz SDRAM UMA CONTROLLER -SUPPORTS 16Mbit SDRAMs 4MX4, 2MX8, 1MX16 . VGA & SVGA CRT CONTROLLER 2D GRAPHICS ENGINE	Original	PDF	64-BIT 66MHz 16Mbit 1MX16) 16-BIT 1MX16 CCIR601 CCIR656 PBGA388
MSC23S4721E-8BS18 Abstract: No abstract text available Text: MSC23S4721E-8BS18 98.07.17 Semiconductor MSC23S4721E-8BS18 4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): DESCRIPTION The Oki MSC23S4721E-8BS18 is a fully decoded, 4,194,304 x 72bit synchronous dynamic random access memory composed of eighteen 16Mb DRAMs (2Mx8) in TSOP	Original	PDF	MSC23S4721E-8BS18 MSC23S4721E-8BS18 72bit 168-pin 72-Bit
MSC23S2640E-8BS8 Abstract: No abstract text available Text: MSC23S2640E-8BS8 98.08.19 Semiconductor MSC23S2640E-8BS8 2,097,152 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK): DESCRIPTION The Oki MSC23S2640E-8BS8 is a fully decoded, 2,097,152 x 64bit synchronous dynamic random access memory composed of eight 16Mb DRAMs (2Mx8) in TSOP	Original	PDF	MSC23S2640E-8BS8 MSC23S2640E-8BS8 64bit 168-pin 64-Bit
Untitled Abstract: No abstract text available Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time	Original	PDF	0316409C 0316169C 0316809C 1Mx16 16Mbit -12ns 545-DRAM;
Untitled Abstract: No abstract text available Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page	Original	PDF	0316409C 0316169C 0316809C 1Mx16 16Mbit SM2402T-6 SM2403T-6 SM2404T-6 SM2402T-7 SM2403T-7
Untitled Abstract: No abstract text available Text: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF	Original	PDF	1000E-D 16M-Bit /1Mx16) 100ns 120ns 100pF 1000E-DC 42-DIP-600
Untitled Abstract: No abstract text available Text: K3P5C1000D-D G C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access	Original	PDF	K3P5C1000D-D 16M-Bit /1Mx16) 100ns 150mA K3P5C1000D-DC 42-DIP-600 K3P5C1000D-GC 44-SOP-600
Untitled Abstract: No abstract text available Text: K3N5V U 1000E-TC CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF	Original	PDF	1000E-TC 16M-Bit /1Mx16) 100ns 120ns 100pF 44-TSOP2-400
pc133 SDRAM DIMM Abstract: 64814GSEM4G09T PC133 Text: 8M x 64 Bit PC-133 SDRAM DIMM PC-133 SYNCHRONOUS DRAM DIMM 64814GSEM4G09T 168 Pin 8Mx64 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD General Description Pin Assignment The 64814GSEM4G09T is a 8Mx64 bit, 9 chip, 168 Pin DIMM module consisting of 8 2Mx8x4	Original	PDF	PC-133 PC-133 64814GSEM4G09T 8Mx64 256x8 pc133 SDRAM DIMM PC133
MX29LV160CBTC-90 Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13 Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of	Original	PDF	MX29LV160C 16M-BIT 2Mx8/1Mx16] 100mA Pac9/2006 MX29LV160CBTC-90 29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
F25L016A Abstract: SOIC 200mil Text: ESMT F25L016A 16Mbit 2Mx8 3V Only Serial Flash Memory FEATURES block erase time 1sec (typical) y Single supply voltage 2.7~3.6V y Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz;100MHz y Low power consumption - typical active current	Original	PDF	F25L016A 16Mbit 33MHz 50MHz 100MHz 200-mil F25L016A SOIC 200mil
Untitled Abstract: No abstract text available Text: SMART SM5720280UUDUGU Modular Technologies February 18, 1998 16MByte 2M x 72 DRAM Module - 2Mx8 based 168-pin DIMM, Non-buffered, ECC Features Part Numbers • • • • • • • • • • • SM57202800UDUGU SM57202801UDUGU SM57202808UDUGU SM57202809UDUGU	Original	PDF	SM5720280UUDUGU 16MByte 168-pin SM57202800UDUGU SM57202801UDUGU SM57202808UDUGU SM57202809UDUGU 50/60/70ns 300/400mil AMP-390052-3
xxxxxxxxx Abstract: No abstract text available Text: LY62L102616A Rev. 1.1 16M Bits 2Mx8 / 1Mx16 Switchable LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Correct typo error on the column “UB#”, “LB#” of truth table for row “Byte Read” “Byte Write” and “Output Disable” at	Original	PDF	LY62L102616A 1Mx16 LY62L102616ALL-55SLT LY62L102616ALL-55SL LY62L102616ALL-70SLIT xxxxxxxxx

16202 Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery	Original	PDF	1MX16/2MX8 HY23V16202 HY23V16202 42pin 100/120ns 44TSOP-II 16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
Untitled Abstract: No abstract text available Text: KM23C16005D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access	Original	PDF	KM23C16005D 16M-Bit /1Mx16) 100ns 150mA KM23C16000D 42-DIP-600 KM23C16005DG 44-SOP-600
IR 10D 8A Abstract: No abstract text available Text: K7I163684B K7I161884B K7I160884B Advance 512Kx36 & 1Mx18 & 2Mx8 DDRII CIO b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx8-bit DDRII CIO b4 SRAM Revision History Rev. No. 0.0 History 1. Initial document. Draft Date Remark Dec. 16, 2002 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the	Original	PDF	K7I163684B K7I161884B K7I160884B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit, IR 10D 8A
Untitled Abstract: No abstract text available Text: K7J163682B K7J161882B K7J160882B Preliminary 512Kx36 & 1Mx18 & 2Mx8 DDR II SIO b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx8-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 1. Change the JTAG Block diagram	Original	PDF	K7J163682B K7J161882B K7J160882B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit, 165FBGA
28F016S3 Abstract: EDI7F342MV 80pin-SIMM Text: EDI7F342MV White Electronic 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F342MV and EDI 7F2342MV are organized as one and two banks of 2Mx32 respectively. The modules are based on Intel's 28F016S3 2Mx8 Flash device in TSOP packages which are mounted on an	Original	PDF	EDI7F342MV 2Mx32 EDI7F342MV 7F2342MV 28F016S3 EDI7F342MV-BNC: A0-A20 150ns 80pin-SIMM
Untitled Abstract: No abstract text available Text: •HYUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in	OCR Scan	PDF	HYCFLF16008 x8/x16 16Mbit 00031flfl 1FC08-01-MAR96 4Li750flfl
Untitled Abstract: No abstract text available Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs	OCR Scan	PDF	16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96
sm 0038 tsop Abstract: E-8BS16 Text: MSC23S4641 E-8BS16 98.06.22 O K I Semiconductor M S C 2 3 S 4 6 4 1 E -8 B S 1 6 4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): DESCRIPTION The Oki MSC23S4641 E-8BS16 is a fully decoded, 4,194,304 x 64bit synchronous dynam ic random access memory com posed of sixteen 16Mb DRAMs(2Mx8) in TSOP	OCR Scan	PDF	MSC23S4641 E-8BS16 E-8BS16 64bit 168-pin 64-Bit sm 0038 tsop
Untitled Abstract: No abstract text available Text: MEMORY 2Mx84BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM M 2SO64CE-100/-84/-67/-100L/-84 L/-67L/-100S/-84S/-67S 144-pin, 2 Clock, 1-bank, based on 2 M x 8 Bit SDRAMs with SPD, Low-power version DESCRIPTION The Fujitsu MB8502S064CE is a fully decoded, CMOS Synchronous Dynamic Random Access Memory	OCR Scan	PDF	2Mx84BIT 2SO64CE-1 00/-84/-67/-100L/-84 L/-67L/-1 00S/-84S/-67S 144-pin, MB8502S064CE MB81116822C 144-pin

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2MX8 Search Results

2MX8 Result Highlights (1)

2MX8 Price and Stock

LEDIL CS15750_STRADA-2X2MX-8-T4-B

LEDIL CS15765_HB-2X2MX-8-WWW

Texas Instruments LM3622MX-8.2

Texas Instruments LM3622MX-8.2-NOPB

Texas Instruments DS90CP22MX-8-NOPB

2MX8 Datasheets Context Search

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1MX16

MSC23S4721E-8BS18

MSC23S2640E-8BS8

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pc133 SDRAM DIMM

MX29LV160CBTC-90

F25L016A

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xxxxxxxxx

16202

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IR 10D 8A

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28F016S3

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sm 0038 tsop

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