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    2N 2222A TRANSISTOR Search Results

    2N 2222A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2N 2222A TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2222 NPN

    Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
    Text: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905


    OCR Scan     		2N708 2N709 2N753 NPN50 2222 NPN 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2369A PDF

    2N 2222 A NPN, TO-18

    Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
    Text: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A


    OCR Scan     		2N708 2N709 2N753 2N 2222 A NPN, TO-18 2N2222 2n h 2222a 2222a NPN 706a 709a 2222 NPN PDF

    TT 2222 npn

    Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
    Text: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904


    OCR Scan     		2N708 2N709 2N753 000000000000a l000000 T0-18 TT 2222 npn 709a 2n h 2222a 2N698 2222 NPN PDF

    JANTXV2N2222AUA

    Abstract: transistor s71 2N2222AUA
    Text: 0 . OPTEK Product Bulletin JA N TX, JA N TXV, 2N 2222A U A Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed


    OCR Scan     		2N2222AUA 2N2222AUA MIL-PRF-19500/255 JANTX/TXV2N2222AUA 00D31Ã JANTXV2N2222AUA transistor s71 PDF

    JAN2N2222A

    Abstract: Q002 complementary npn-pnp 2N2222A 026 2N2907A surface mount Power Transisitor 100V 2A Transistor 2N2222A 2N2222A 2N2907A HCT700
    Text: OPTEK Product Bulletin HCT700 May 1993 Surface Mount NPN/PNP Complementary Transistors Type HCT700 Features • C e ra m ic surface mount package • Miniature package to minimize circuit board area • Electrical performance sim ilar to 2 N 2222A and 2N 2 9 0 7 A


    OCR Scan     		HCT700 HCT700 2N2222A 2N2907A MIL-S-19500 JANTX2N4854U) Q00233S JAN2N2222A Q002 complementary npn-pnp 2N2222A 026 2N2907A surface mount Power Transisitor 100V 2A Transistor 2N2222A 2N2907A PDF

    2n h 2222a

    Abstract: 2N2218 2222a 2N5581 ip 2222A
    Text: MAXIM UM RATINGS 2N 2218A 2N 2219 Symbol 2 N 22 2 2 2N 2219A 2N 2222A Unit C o lle c to r -E m itte r V o lta g e v CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 6.0 V dc m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s


    OCR Scan     		2N2218A 2N2219 2N2222 2N2218, /2N2219 O-205AD) 2N2218 /19/19A/22/22A 2n h 2222a 2222a 2N5581 ip 2222A PDF

    Untitled

    Abstract: No abstract text available
    Text: 61096 Features: • • • • JOIff- G E N E R A L P U R P O S E N P N T R A N S IS T O R (2N 2222A ) OPTOELECTRONIC PRODUCTS DIVISION Applications: Hermetically sealed Rugged package-able to withstand high acceleration load TO-18 package MIL-PRF-19500 screening available


    OCR Scan     		MIL-PRF-19500 2N2222A PDF

    2907A EQUIVALENT

    Abstract: 2222A 2907 transistor 4393 s0918 BFQ22 equivalent a 2907 SOR2369 S02907 bfr93
    Text: m icropackaged transistors according to CNET specifications transistors en microboitier selon spécification CN ET Réf. C N E T Standard catalog product Produit catalogue standard TCH 918.3 TCH 918.5 SO R 918 S0 9 1 8 2N918 2N 918 TCH 2222.3 TCH 2222.5 S O R 2222


    OCR Scan     		2N918 S0918 S02222 S02369 S02907 SOR2907A S02907" S02894 2907A EQUIVALENT 2222A 2907 transistor 4393 BFQ22 equivalent a 2907 SOR2369 bfr93 PDF

    tl 2n2222

    Abstract: 2N2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222
    Text: N AMER PHILIPS/DISCRETE b'IE D • bbS3T31 OOEÛÜflb 12G I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -18 metal envelope w ith the collector connected to the case. They are primar­ ily intended for high speed switching. The 2 N 2 2 2 2 is also suitable for d.c. and v.h.f./u.h .f. amplifiers.


    OCR Scan     		bbS3T31 2N2222 2N2222A 2N2222A 100ms tl 2n2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222 PDF

    BSW21A

    Abstract: 2n2222 npn BSW22A BC107 BCY65E BC17 BC178 BSX51A BSX52A BCY58
    Text: Small Signal M etal TO-18 METAL TRANSISTORS NPN TYPES G E N E R A L PURPOSE SW ITCH A N D A M P L IF IE R v CEO V C E R (+ ) (V q q ) I q max. (m A ) H pE min. @ NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 45 20 32 45 60 25 50 60 25 50 60 100 100 200 200


    OCR Scan     		BC107 BC108AB BCY58 BCY59 BCY65E BSX51 BSX51A BSX51B BSX52 BSX52A BSW21A 2n2222 npn BSW22A BC17 BC178 PDF

    N2222A

    Abstract: PW 2N 218A n2222a2 2N2219A ip 2222A
    Text: S G S -T H O M S O N 2 N 2 2 1 8 A -2 N 2 2 1 9 A R fflD is œ iL iO ÏÏM iD g i 2 N 2 2 2 1 A -2 N 2 2 2 2 A HIGH SPEED SWITCHES D E S C R IP T IO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218A and 2N2219A and in Jedec


    OCR Scan     		2N2218A, 2N2219A, 2N2221A 2N2222A 2N2218A 2N2219A) 2N2222A) 2N2218A/2N2219A 2N2221A/2N2222A N2222A PW 2N 218A n2222a2 2N2219A ip 2222A PDF

    transistor 2222a

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


    OCR Scan     		14-pin TPQA06 TPQA55 TPQA56 PSA55 PSA56 2N2907 2N3904 2N3906 transistor 2222a PDF

    2N2217

    Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218
    Text: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA


    OCR Scan     		2N2217 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A 2N2222A) 2N2218, 2N2221 KH 2222 ic TT 2222 ip 2222A 2N2218 PDF

    transistor 2222a

    Abstract: k019 2222A transistor M2907A 2222a tm2907 2222A transistors ip 2222A
    Text: SEC SILICON TRANSISTORS ELECTRON DEVICE N T M 2 2 2 2 A ,N T M 2 2 2 2 A R GENERAL PURPOSE AMPLIFIER, HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR "M INI MOLD TYPE” DESCRIPTION The N TM 2222A , N TM 2222A R are designed fo r general purpose am p lifie r and high speed sw itching applications, especially


    OCR Scan     		PDF

    BFR99

    Abstract: BC377 UHF UHF Transistors transistor 2n 3839 BFR38 t 3866 transistor 2N956 BFX89 BSX33 uhf amplifier
    Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Noise figure Trans. Freq. Max ratings Polar. Type Main unction Package •c NF (MHz (mA) 1000 le f pg m (mA) (MHz) m 3 3.5 3 800 850 1000 typ 1200


    OCR Scan     		BFR38 BSX33 2N956 BFR99 BC377 UHF UHF Transistors transistor 2n 3839 t 3866 transistor BFX89 uhf amplifier PDF

    2n h 2222a

    Abstract: 2N 2222 2221A T018 NPN 2N 2219 BSX 61
    Text: NPN Silicon Transistors N P N Silico n Planar Transistors fo r m edium level switching Characteristics at T ;lnlj = 25 ° C M a x im u m ratings Case B V C fO V B V C SO V b v £SO V PT O T > Î T ype pr o r 2 W W hF iF 1 0 V / 1 0 m A ) ^FE^CE^C1 (V/m a)


    OCR Scan     		0V/10mA) 2218a 2219a 2221a 2222a 2n h 2222a 2N 2222 T018 NPN 2N 2219 BSX 61 PDF

    2N2475

    Abstract: BFS36 BFS38 BFS46 BFS41 2N2605 2N930 BFS36A BFS42 BFS38A
    Text: M ICRO-E CHARACTERISTICS AT 25°C p-n - -P n -p - n l\/l C I'M1U 1IPIV V/1I CURRENT GENERAL PURPOSE IVI tU TRANSISTORS Parameter BFS38A M in. Test Conditions M in. 25 - - 35 v CBO Rated Max. - VCEO sus l c = 5mA, Iß —0 25 v EBCi Rated Max. - 5 >CBO V c b = V c b O f*atec* ^ ax' ^E= 0


    OCR Scan     		BFS38A BFS38 BFS39 BFS40A BFS40 BFS41 BFS36 2N930 BFS37 2N2605 2N2475 BFS38 BFS46 BFS41 2N2605 BFS36A BFS42 BFS38A PDF

    2n 2222A 3904

    Abstract: No abstract text available
    Text: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470


    OCR Scan     		DGG7423 160MHz 100nA 2N3711 MPS3711 90MHz MPS-A65 100nA 2n 2222A 3904 PDF

    BEL100N

    Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
    Text: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218


    OCR Scan     		2N2218 285max 2N2219A 2N2221A 222STOR BEL100N 2N3500 2N3501 2N3501TV 20min. bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor PDF

    BFR99

    Abstract: BFR38 BC377 BFR36 BFR99A bfr18 2N3137 2N5109 LH105 t 3866 transistor
    Text: /IT SGS-THOMSON TELECOM AND DATA COMMUNICATIONS * 7# »»lajgraoraotss SMALL SIGNAL TRANSISTORS C haracteristics Max ratings Polar. V CEO V *C (m A) Type P .o, (m W ) *T (M H z) ar d NF (dB) NPN NPN NPN PNP NPN NPN NPN 15 15 15 25 20 30 20 25 50 50 50 200


    OCR Scan     		BFY90 2N918 BFX73 BFR99A 2N3137 BFR36 2N5109 LH1056 LH1061 BSX33 BFR99 BFR38 BC377 bfr18 LH105 t 3866 transistor PDF

    2N3707 DIODE

    Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


    OCR Scan     		ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 2N3707 DIODE 2n4058 2N2475 BC107 equivalent Competitive BC108 PDF

    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


    OCR Scan     		BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82 PDF

    power amplifier IC 4440

    Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
    Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min


    OCR Scan     		TQ-60 T0-60 BSX33 2N956 power amplifier IC 4440 BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38 PDF

    BT2222A

    Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
    Text: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.


    OCR Scan     		BT929 2N929 BT930 2N930 BT2483 2N2483 BT2484 2N24B4 BT2604 2N2604 BT2222A BT2222 2N2222 BT3501 BT51 2N2708 2N2944 PDF