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    2N 3966 Search Results

    2N 3966 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    51939-669LF Amphenol Communications Solutions PwrBlade®, Power Connectors, 5ACP 24S 5ACP Right Angle Header, Solder To Board Visit Amphenol Communications Solutions
    51939-662LF Amphenol Communications Solutions PwrBlade®, Power Connectors, 8S 2P Right Angle Header, Solder To Board Visit Amphenol Communications Solutions
    51939-660LF Amphenol Communications Solutions PwrBlade®, Power Connectors, 10P 24S Right Angle Header, Solder To Board Visit Amphenol Communications Solutions
    51939-661LF Amphenol Communications Solutions PwrBlade®, Power Connectors, 24S 6P 3ACP Right Angle Header, Solder To Board Visit Amphenol Communications Solutions
    51939-666LF Amphenol Communications Solutions PwrBlade®, Power Connectors, 64S Right Angle Header, Solder To Board Visit Amphenol Communications Solutions
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    2N 3966 Price and Stock

    New Jersey Semiconductor Products, Inc. 2N3966

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N3966 2,835 1
    • 1 $8.736
    • 10 $4.368
    • 100 $3.7853
    • 1000 $3.5818
    • 10000 $3.5818
    Buy Now

    New Jersey Semiconductor Products Inc 2N3966

    TRANSISTOR,JFET,N-CHANNEL,30V V(BR)DSS,2MA I(DSS),TO-72
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3966 2,268
    • 1 $11.7
    • 10 $11.7
    • 100 $11.7
    • 1000 $4.095
    • 10000 $4.095
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    Philips Semiconductors 2N3966

    Electronic Component
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    ComSIT USA 2N3966 2
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    Microsemi Corporation 2N3966

    Limited Part Number Data;
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    Vyrian 2N3966 443
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    2N 3966 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3966 Philips Semiconductors N-Channel Junction Field Effect Transistors Original PDF
    2N3966 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N3966 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3966 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3966 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3966 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3966 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3966 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3966 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N3966 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3966 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3966 National Semiconductor Switches/Choppers Scan PDF
    2N3966 National Semiconductor N-Channel JFET Switch Scan PDF
    2N3966 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2N3966 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N3966 Semico N-Channel Junction Field Effect Transistors Scan PDF
    2N3966 SGS-Thomson Transistor Datasheet Scan PDF
    2N3966 Siliconix FET Design Catalogue 1979 Scan PDF
    2N3966 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    2N3966 Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF

    2N 3966 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4114N

    Abstract: DV6248 4314U 4112N DV6224 8214J 614NGH 4214NN 3414N 614NGN
    Text: Brief description ● General description: DC fan with electronically commutated external rotor motor. Commutation electronics completely integrated. ● Impeller material: Fiberglass-reinforced PA plastic ● Housing material: Fiberglass-reinforced PBTP plastic


    Original
    4312R 4314R 614NHU 8312U 8314U 4312U 4314U 4114N DV6248 4314U 4112N DV6224 8214J 614NGH 4214NN 3414N 614NGN PDF

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original
    304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC PDF

    sd 4093

    Abstract: HF 4093 N 4220 2N4119 4446 transistor ESM 30 2N 4117 4392 2N4118 2N4416
    Text: o n channel field effect transistors — metal case transistors à effet de cham p-canal n — boîtier métal Type 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 2N 4117 2N 4117 A 2N4118 2N 4118 A 2N4119 2N 4119 A 2N 2N 2N 2N 2N 2N 4220 4220 A 4221 4221 A 4222 4222 A


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    2N4118 2N4119 2N5433 sd 4093 HF 4093 N 4220 4446 transistor ESM 30 2N 4117 4392 2N4416 PDF

    Untitled

    Abstract: No abstract text available
    Text: S G S— THOMSON ?1C D | 7 ^ 2 3 7 GGOMfl?! S | " ^ ¿ 7 . 2,5 " THOfviSOM SEMICONDUCTORS n channel field effect transistors - metal case Types 2N 2N 2N 2N 2N 3821 3822 3823 < 3824 3966 2N 4117 2N 4117 A 2N 4118 2 N 4 1 I8 A 2N 4119 2N 4119 A 2N 2N 2N . 2Ñ


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    2N4416 PDF

    HF 4093 N

    Abstract: bf 4393 4392 2N4119
    Text: N CHANNEL FIELD EFFECT TRANSISTORS - METAL CASE Typ«« 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 A p p lic a tio n AF/R F general purpose Usage g é n é ra i BF/H F 2N 4117 2 N 4 1 17 A 2 N 4118 V BR GSS m in •g s s m ax IV ) ip A r (n A ) -5 0 -5 0 -5 0


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    4856a

    Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92
    Text: SEMICONDUCTORS INC DTE D | 013bbSD □□□D3G7 S | N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)


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    613bb5D O-92DE O-92DA 4856a Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92 PDF

    2907A EQUIVALENT

    Abstract: 2222A 2907 transistor 4393 s0918 BFQ22 equivalent a 2907 SOR2369 S02907 bfr93
    Text: m icropackaged transistors according to CNET specifications transistors en microboitier selon spécification CN ET Réf. C N E T Standard catalog product Produit catalogue standard TCH 918.3 TCH 918.5 SO R 918 S0 9 1 8 2N918 2N 918 TCH 2222.3 TCH 2222.5 S O R 2222


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    2N918 S0918 S02222 S02369 S02907 SOR2907A S02907" S02894 2907A EQUIVALENT 2222A 2907 transistor 4393 BFQ22 equivalent a 2907 SOR2369 bfr93 PDF

    2N 3966

    Abstract: 2N3966 transistor 2n
    Text: *2N 3966 F IE L D - E F F E C T T R A N SISTO R , SILICO N . N CH AN N EL TRA N SISTO R A E F F E T D E CHAMP, SILIC IU M . CAN AL N % Preferred device Dispositif recommandé - Switching Commutation 2 mA •d s s - Chopper min. Découpeur V GS off 4 -6 V ■d s x


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    C12ss 2N 3966 2N3966 transistor 2n PDF

    2N3966

    Abstract: 219T
    Text: 2N 3966 J V _ N-CHANNEL SILICON FET S ym m etrica l n-channel, d e p le tio n ty p e , planar e p ita xia l ju n c tio n fie ld -e ffe ct tran sisto r in a T O -72 m etal envelope w ith th e shield lead connected to th e case. The tra n sisto r is suitable in a va rie ty o f


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    2N3966 003505b 2N3966 219T PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


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    thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    2N4119

    Abstract: 4392 transistor ESM 30 2N4117 2N4118A 2N 4092 2N 4221 2N 4391 2N 4416 2N3823
    Text: T O 18 CB 6 N channel field effect transistors (metal case) Tamb - 25°C Transistors à e ffe t de champ, canal N (boîtier m étallique ) Case Type V (BR)GSS (V) B oîtie r min •g s s InA) / (pA )* I dss <mA) 21 s <mS) max m in max y m in max v GSoff


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    c11ss 2N4119 4392 transistor ESM 30 2N4117 2N4118A 2N 4092 2N 4221 2N 4391 2N 4416 2N3823 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    4392

    Abstract: MARKING S04 transistor 4393 Transistor BFR 30 transistor ESM 30 MARK SO SOT
    Text: A C T IV E COMPONENTS FOR H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IRC U ITS H Y B R ID E S i CB-166 SOT-23 N channel field effect transistors Transistors à effet de champ. canal N Type Type Mark mg Marq uege N BFR 30 M1 BFR 31 M2 R iu f V DS


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    CB-166 OT-23) 4392 MARKING S04 transistor 4393 Transistor BFR 30 transistor ESM 30 MARK SO SOT PDF

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 PDF

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC PDF

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3966 N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is suitable in a variety of low power switching applications, e.g. in multiplexing systems.


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    2N3966 bb53T31 D03SfiSb 003SAS7 PDF

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


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    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF