Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N SILICONIX FET Search Results

    2N SILICONIX FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    2N SILICONIX FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO72 package n-channel jfet

    Abstract: 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor
    Text: 2N/SST4416 2N4416A N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER Linear Integrated Systems FEATURES Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE 400 MHz 4 dB (max) EXCEPTIONAL GAIN (400 MHz) 10 dB (min) 1 2N SERIES ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N/SST4416 2N4416A 2N/SST4416 2N4416A LS4416 LS4416A 2N4416 300mW OT-23 TO72 package n-channel jfet 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor

    4392 mosfet

    Abstract: MOSfet 4392 dual P-Channel JFET sot23 P-Channel MOSFET 2N jfet to 92 SST113 j174 EQUIVALENT transistor U402
    Text: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)


    Original     		PDF 2N/PN/SST4391 2N/PN/SST4391, 1800mW 350mW 4392 mosfet MOSfet 4392 dual P-Channel JFET sot23 P-Channel MOSFET 2N jfet to 92 SST113 j174 EQUIVALENT transistor U402

    FET J202

    Abstract: siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and a


    Original     		PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A FET J202 siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet

    2N4393

    Abstract: FET J202 siliconix fet j112 fet siliconix fet data book pn4117a transistor j201 FET J506 J112 jfet 2n4339
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and


    Original     		PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A 2N4393 FET J202 siliconix fet j112 fet siliconix fet data book pn4117a transistor j201 FET J506 J112 jfet 2n4339

    FET J202

    Abstract: transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and


    Original     		PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A FET J202 transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392

    siliconix - j201

    Abstract: j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112
    Text: AN103 Siliconix The FET ConstantĆCurrent Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constantĆcurrent source. An adjustableĆcurrent source Figure 1 may be built with a FET, a variable resistor,


    Original     		PDF AN103 SST112 2N4392 2N4393 SST/J113 2N4392, SST/J112 2N4393, SST/J113 siliconix - j201 j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112

    E110 FET

    Abstract: TIS58 fet MOTOROLA J210 TIS58 JF1033B J300 Siliconix JF1033S InterFET 16M SOT-23 ta82
    Text: JUNCTION FET Item Number Part Number Y BR GSS loss 9f. (V) (A) Min (S) Max 800u 1.0m 800u 4.5m 800u 1.5m 1.5m 6.0m 6.0m 400u 25 25 25 25 25 25 25 25 1.0m 1.5m 1.6m 2.5m 3.0m 3.0m 3.0m 3.0m 3.0m 4.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m :;prgue~,ec


    Original     		PDF MPF109W BFT46 MPF109R JF1033B MPF109N J204-18 MPF256 SMP5668 E110 FET TIS58 fet MOTOROLA J210 TIS58 J300 Siliconix JF1033S InterFET 16M SOT-23 ta82

    AN73-1 fet

    Abstract: AN73-1 9L05 siliconix AN73-7 Siliconix Application Note jpad100 jfet AN73 J174-7 VCR3P 2n Siliconix FET
    Text: voltage-controlled resistor FETs designed for • • • H Siliconix P rformanc Curv _$ NT, PSA See Section t~CA, ~, NPA, Signal AHenuators • Small Filters • Amplifier Control • Oscillator Gain Amplitude Control • TO-18 MODIFIED TO-72 (MODIFIED)


    Original     		PDF

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


    Original     		PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    2N5045

    Abstract: 2N5047 2N3921-2 2N4084-5 2N5045-7 2N5046 J401 U401-6
    Text: designed for 2N 5047 a Siliconix . Performance Curves NNR See Section 5 • High Gain Differential Amplifiers BEN EFITS • Minimum System Error and Calibra­ tion 5 m V Offset Maximum 2N5Ö45 2N5045 2N5046 monolithic dual n-channel JFETs • Low D rift


    OCR Scan     		PDF 2N5045) 2NS045 2N5046 2N5047 200tia 2N5045 2N3921-2 2N4084-5 2N5045-7 2N5046 J401 U401-6

    2N5196

    Abstract: 2N5196-9 2N5198 2N5199 2N5199CHP 2N5545-47 2NS197 U231-35 FET package TO-71
    Text: 2N 5199 2N5198 2N5197 2N5196 B monolithic dual n-channel JFETs designed fo r Siliconix Perform ance Curves N N P See Section 5 . BENEFITS • Minimum System Error and Calibration 5 mV Maximum Offset 2N5196, 97 • Low Drift 5 t iV r C Maximum (2N5196)


    OCR Scan     		PDF 2N5196, 2N5196) VDS-20V 2N5196 2N5196-9 2N5198 2N5199 2N5199CHP 2N5545-47 2NS197 U231-35 FET package TO-71

    AN73-1 fet

    Abstract: jfet AN73 2n4117 jfet VCR2N equivalent 2N3458 low noise dual P-Channel JFET 2N3909 siliconix AN73-7 2N5909CHP 2n4117 equivalent
    Text: VCR7N VCR5P VCR4N VCR3P voltage-control led resistor FETs designed for . . . nt •Small Signal Attenuators ■ Filters ■Am plifier Gain Control ■Oscillator Amplitude Control o S itò B o n ix rfo rm a n c e P C PE T O -18 Set Section 7 -*C g c H^ O S


    OCR Scan     		PDF

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan     		PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686

    AN73-1 fet

    Abstract: 2n4117 equivalent 2N5902 2N4117 2N5905CHP 2N5909CHP N-Channel JFET FETs electrometer vcr2n VCR2N equivalent
    Text: VCR7N VCR5P VCR4N VCR3P voltage-control led resistor FETs designed for . . . nt •Small Signal Attenuators ■ Filters ■Am plifier Gain Control ■Oscillator Amplitude Control o S itò B o n ix rfo rm a n c e PC PE C u rv e s S e e TO-18 Set Section 7 -*C


    OCR Scan     		PDF

    J300 Siliconix

    Abstract: 10112N 2n Siliconix FET U257 dual FET 2N4393 2N4416 2N5912 J300 U232 Siliconix Application Note
    Text: z> B Siliconix g APPLICATION NO TE FETs for Video Amplifiers INTRODUCTION For this analysis the gate source leakage resistance has been ignored due to its high value. Redrawing the input equivalent circuit as a simple parallel RC combination results in The field-effect transistor lends itself well to video amplifier


    OCR Scan     		PDF

    transistor FN 1016

    Abstract: siliconix fet Siliconix FET Design Catalog siliconix FET DESIGN Siliconix JFET Siliconix "fet" siliconix catalog ag2 transistor Siliconix Application Note U311
    Text: s S ilic o n ix APPLICATION NOTE Audio-Frequency Noise Characteristics of Junction FETs INTRODUCTION factor, a source resistor R q , w ith a therm al noise voltage e j , is added to the circuit. The purpose o f this application note is to identify and characterize audio frequency noise in junction field-effect


    OCR Scan     		PDF

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431

    2N4303

    Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
    Text: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60


    OCR Scan     		PDF P1087 P1087-18 SD210 SD211 S0212 SD213 SD214 SD215 U1897 U1897-18 2N4303 sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302

    L144CJ

    Abstract: FET Input Amplifiers siliconix FET DESIGN "FET Input Amplifiers" CR043 U401 transistor fet N-Channel RF Amplifier dual jfet vhf AN74-3 "DUAL N-Channel JFET"
    Text: « ¿ L . Performance Curves NNR s e section 5 • • • b e n e fits • Minimum System Error and Calibra5 mV Offset Maximum U401 • * Low Drift with Temperature 1 0 m v/°c Maximum (u 4 o i, 02) Operates from Low Power Supply Characteristic 1 Rv QSS


    OCR Scan     		PDF U401-04) 200tiA L144CJ FET Input Amplifiers siliconix FET DESIGN "FET Input Amplifiers" CR043 U401 transistor fet N-Channel RF Amplifier dual jfet vhf AN74-3 "DUAL N-Channel JFET"

    VN99AB

    Abstract: VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN99AB VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633

    FETs in Balanced Mixers Ed Oxner

    Abstract: ecom-2989 fet j310 FET U310 j310 fet relcom bt9 FETs in Mixers Ed Oxner fets in balanced mixers U310 fet oxner mixer diode
    Text: s Siliconix APPLICATION NOTE FETs in Balanced Mixers Ed Oxner INTRODUCTION Initial evaluation o f the active FET mixer will imply a dis­ advantage because o f local oscillator drive requirem ents; bipolar devices in low-level m ixers require very little drive


    OCR Scan     		PDF ECOM-2989, FETs in Balanced Mixers Ed Oxner ecom-2989 fet j310 FET U310 j310 fet relcom bt9 FETs in Mixers Ed Oxner fets in balanced mixers U310 fet oxner mixer diode

    1rf720

    Abstract: VN64GA 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
    Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 T O -22Q A B Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		PDF IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 1rf720 VN64GA 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion-Mode FET E202 2N3631 2N3823 Junction FETs JFETs 2N2606 2N3329 E202 P-Channel Depletion Mosfets
    Text: AN73-7 s S ilic o n ix APPLICATION NOTE An Introduction to FETs INTRODUCTION In fact, FET technology today allows a greater packaging density in large-scale integrated circuits LSI than would ever be possible w ith bipolar devices. The basic principle o f the field-effect transistor (F E T ) has


    OCR Scan     		PDF

    2N4339

    Abstract: sherwin 2N4339 Siliconix siliconix FET DESIGN rdbq
    Text: TA70-2 s Siliconix TECHNICAL ARTICLE FET Biasing Jam es Sherwin INTRO DUCTION Engineers o ften design FET amplifiers th at are unnecessarily sensitive to device characteristics because they m ay n o t be familiar w ith proper biasing m ethods. One w ay to obtain consistent circuit perform ance in spite o f


    OCR Scan     		PDF