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    2N UHF FET Search Results

    2N UHF FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-213UHFMX20-005 Amphenol Cables on Demand Amphenol CO-213UHFMX20-005 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 5 ft Datasheet
    CO-213UHFMX20-050 Amphenol Cables on Demand Amphenol CO-213UHFMX20-050 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 50 ft Datasheet
    CO-213UHFMX20-100 Amphenol Cables on Demand Amphenol CO-213UHFMX20-100 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 100 ft Datasheet
    CO-213UHFMX20-010 Amphenol Cables on Demand Amphenol CO-213UHFMX20-010 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10 ft Datasheet
    CO-213UHFMX20-015 Amphenol Cables on Demand Amphenol CO-213UHFMX20-015 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 15 ft Datasheet

    2N UHF FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n5484 equivalent

    Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
    Text: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G


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    2N5484/D O-226AA) 2n5484 equivalent 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent PDF

    FET 2N5459

    Abstract: transistor 5457 fet 2n5457 2n5458 2n5457 2n5459 FET 2N5458 transistor 2N5458 transistor 2N5457 fet junction n-channel transistor
    Text: CRO 2N5458 2N5459 N-CHANNEL JUNCTION FET DESCRIPTION T0-92DD 2N 5457,8.9 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. DSC ABSOLUTE MAXIMUM RATINGS Draiu-Source Voltage VDS 25V Drain Current ID 25mA Gate Current ÍG


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    2N5458 2N5459 T0-92DD 300mW 2N5457 FET 2N5459 transistor 5457 fet 2n5457 FET 2N5458 transistor 2N5458 transistor 2N5457 fet junction n-channel transistor PDF

    2n5484

    Abstract: 2n5486 2n5484 equivalent 2n5484 jfet 2N5486 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers 2N 5484 2 N5486 N-Channel — Depletion M AXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ T q = 25 C Derate above 25°C


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    N5486 100-C) 2N5484 2N5486 L3L7255 37fifl 2n5486 2n5484 equivalent 2n5484 jfet 2N5486 equivalent PDF

    4116 2n

    Abstract: BFG 99
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifiers 2N 5484 2N 5486 N -C h a n n e l — Depletion 1 DRAIN MAXIMUM RATINGS Rating D r a in -G a te Voltage R everse G a te - S o u rc e Voltage D rain C u rrent F o rw a rd G a te C u rrent Total D e vice D issipa tion @ T q = 2 5 cC


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    2N5484 2N9486 4116 2n BFG 99 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    transistor ESM 30

    Abstract: BAT19 in6263 in 6263
    Text: FET DU A L T R A N S IS T O R S . N C H A N N E L V B> GSS 'DSS •g s s m ax V G S off *31. C llu M a tc h in g C l2 s s A p p a rk m a n t * 2 1 i 'DSS m in ("A ) (m A J M ESM 25 ESM 25 A o 2N 5196 2N 5199 AF/RF general purpose Usage général BF/HF n in - m a x m in -m o x


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    esm25a CB-124) CB-102) transistor ESM 30 BAT19 in6263 in 6263 PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI/ LINEAR DEVICES 2bE J> OOliaST 4 HA21001 M S- - T -T7 -O S -O S - VHF/UHF Tuner Use G aAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion


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    HA21001 MSP-18 -30dBm -40dBm 75MHz 60MHz 589-830Q PDF

    FMC080802-20

    Abstract: FMC080902-20 FMC080802-2 FMC080802
    Text: 294 - S S /J' • FMC 0 8 0 8 0 2 - 2 0 m m : * J ü - * * it t 8 o f range MHz Pout(dBm) V d d Z(V) S I ® : GaAs FET. Voo(V) J B i É : Ü H F ( 8 2 4 ~ - 8 4 9 M H z ) Î S , tÜft 1W FM P i n ( d B m ) i* ® 1 8 I 3 M (AMPS î t E ) o Topt:-30-+90°C


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    FMC080802-2 -849MHz) 490mA --32mm-Â -905MHz) -30dBc FMC080802-20 FMC080902-20 FMC080802 PDF

    for transistor bf 245c

    Abstract: BF 145 transistor transistor BF 245A BF 145 2n uhf fet micro to-237 transistor BC 310 transistor BC 321
    Text: MICRO EL EC TRO NICS CORP û2 Ì F| bEHlTflfl 00DDb7S 2 N -Channel Junction Field Effect Transistors ~T ~3/-17 G EN ER A L PURPOSE M AXIM UM R A T IN G S 'd s s IraA ) TYPE V G S off) (V ) Y fs (mmhos) Ciss* Crss NF (pF) (pF) (dB) C A SE Pd NO. b v gss (mW)


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    00DDb7S O-92DE O-92DA for transistor bf 245c BF 145 transistor transistor BF 245A BF 145 2n uhf fet micro to-237 transistor BC 310 transistor BC 321 PDF

    marking L4F

    Abstract: Hitachi DSA001652
    Text: 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A Z 2nd. Edition Dec. 1998 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)


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    3SK322 ADE-208-712A OT-143 marking L4F Hitachi DSA001652 PDF

    2n uhf fet

    Abstract: Hitachi DSA002730 3sk322
    Text: 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712B Z 3rd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)


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    3SK322 ADE-208-712B OT-143 D-85622 2n uhf fet Hitachi DSA002730 3sk322 PDF

    2n3219

    Abstract: 2N4260 RAYTHEON 2N3635 2N2004 2N2708 2N3910 2N3960 2N4261 2N915 2N2333
    Text: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Volts m A/m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF M ax 2N 943


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    2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A BT2946 2n3219 2N4260 RAYTHEON 2N3635 2N2708 2N3910 2N3960 2N4261 2N915 PDF

    2n4416

    Abstract: 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A
    Text: P hilips Sem iconductors M 7 1 1 0 fl2 ti DDbBDTB 151 • IP H IN N-channel field-effect transistor Product specification 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES o CO • Interchangeability of drain and source connections < SYMBOL • Low noise PARAMETER


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    2N4416; 2N4416A 2N4416 2n4416 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A PDF

    2N5486 equivalent

    Abstract: 2H5484
    Text: 2N 5484 2 N5486 ELECTRICAL CHARACTERISTICS continued {7a = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Input Capacitance (V d s - 15 Vdc, Vq s « 0, f « 1.0 MHz) Characteristic C(ss - - 5.0 PF Reverse Transfer Capacitance {Vq s * 15 Vdc, VGS = 0, f ~ 1.0 MHz)


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    N5486 2N5484 2N5486 2N5486 equivalent 2H5484 PDF

    2N5484

    Abstract: No abstract text available
    Text: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIM UM RATINGS Rating Symbol Value VdG 25 Vdc V g SR 25 Vdc Drain-Gate Voltage Reverse Gate-Source Voltage 'd 30 mAdc 'G(f) 10 mAdc Pd 350 2.8 mW mW/°C T j. Tstg - 65 to +150 °C Drain Current Forward Gate Current


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    2N5484 2N5486* O-226AA) b3b7254 PDF

    triac LT 5220

    Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
    Text: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)


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    041P9C RO-45 O-92/1/2/3 O-92/5 O-106 O-220 triac LT 5220 BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716 PDF

    BF256

    Abstract: JFET bf256 BF256B BF256C 2N4416
    Text: M O T O R O L A SC XSTRS/R F 12 E D | b3fa?aS4 GOflbbaa S | BF256, B, C CASE 29-04, STYLE 23 TO-92 TO-226AA 1 D rain M A X IM U M RATINGS S ym b ol Value U n it Drain-Source Voltage VDS ±30 Vdc Drain-Gate Voitage Vd G 30 Vdc Gate-Source Voltage Vg S 30


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    BF256, O-226AA) 2N4416 BF256 JFET bf256 BF256B BF256C PDF

    BFJ 49

    Abstract: No abstract text available
    Text: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA M A XIM U M RATINGS Rating Drain-Gate V oltage Reverse G a te-Source V oltage Drain Current Forw ard Gate Current Total Device D issip atio n (a T c = 25°C Derate a b o v e 25°C Operating and S to ra g e Ju nction


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    2N5484 2N5486* O-226AA) 2N5486 BFJ 49 PDF

    2N5484

    Abstract: 2N5485
    Text: 2N5484 thru 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA M A X IM U M R A T IN G S Rating Symbol Value Unit Vd G 25 Vdc vgsr 25 Vdc 'o 30 m Adc 'G if) 10 m Adc Pd 350 2.8 mW m W ;C TJ. Tslg - 6 5 to +150 ’C Drain-Gate Voltage Reverse Gate-Source Voltage


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    N5484 N5486 O-226AA) 2N5484 2N5486 2N5485 PDF

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


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    K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686 PDF

    2N5457 equivalent

    Abstract: JFET 2N5457 2N5486 MOTOROLA 2c003 2N5486 equivalent 2n5484 equivalent 2NS457 2N5460 transistor jfet 2N5457 2N5461
    Text: 2N5457* CA SE 29-04, STYLE 5 TO-92 TO-226AA 1 Drain M A X IM U M RA TIN G S Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Sym bol Value Unit Vd s 25 Vdc V DG 25 Vdc Vdc 2 Source V G SR -2 5 Gate Current IG 10 mAdc Total Device Dissipation @ Ta = 25°C


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    2N5457* O-226AA) -10iiAtlc 2N5484 2N5486 18-S11g VDG-15Vdc S12fl 20-S21j -S22g 2N5457 equivalent JFET 2N5457 2N5486 MOTOROLA 2c003 2N5486 equivalent 2n5484 equivalent 2NS457 2N5460 transistor jfet 2N5457 2N5461 PDF

    BF245

    Abstract: BF245C BF245C JFET
    Text: BF244A,B ¿¡T CASE 29-04, STYLE 22 TO-92 TO-226AA 1Souf BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) G al« \ J 1 / M A X IM U M RATINGS R a tin g V a lu e Sym bol U n it D ra in -S o u rc e V o lta g e Vd S D ra in -G a te V o lta g e vdg 30 G a te -S o u rc e V o lta g e


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    BF244A O-226AA) BF245 BF245C BF245C JFET PDF

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10 PDF