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    2N06L50

    Abstract: diode c25 IPG20N06S2L-50 PG-TDSON-8-4
    Text: IPG20N06S2L-50 OptiMOS Power-Transistor Product Summary V DS 55 V R DS on ,max4) 50 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S2L-50 2N06L50 2N06L50 diode c25 IPG20N06S2L-50 PG-TDSON-8-4

    2N06L5

    Abstract: No abstract text available
    Text: IPG20N06S2L-50A OptiMOS Power-Transistor Product Summary VDS 55 V RDS on ,max4) 50 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S2L-50A PG-TDSON-8-10 2N06L50 2N06L5