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Infineon Technologies AG 2N06LH5 Electronic Component
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2N06LH5 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N06LH5 Abstract: No abstract text available Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated	Original	PDF	SPP80N06S2L-H5 SPB80N06S2L-H5 P-TO220-3-1 P-TO263-3-2 P-TO220-3-1 Q67060-S6054 Q67060-S6055 2N06LH5
2N06LH5 Abstract: No abstract text available Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated	Original	PDF	SPP80N06S2L-H5 SPB80N06S2L-H5 P-TO263-3-2 P-TO220-3-1 Q67060-S6054 2N06LH5 2N06LH5
2N06LH5 Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5 Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055	Original	PDF	SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
2N06LH5 Abstract: smd diode marking G12 TRANSISTOR SMD MARKING CODE h5 DIODE H5 SMD smd marking g12 H5 SMD H5 smd diodE smd H5 T ANPS071E IPB80N06S2L-H5 Text: IPB80N06S2L-H5 IPP80N06S2L-H5 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB80N06S2L-H5 IPP80N06S2L-H5 PG-TO263-3-2 PG-TO220-3-1 SP0002-19068 2N06LH5 2N06LH5 smd diode marking G12 TRANSISTOR SMD MARKING CODE h5 DIODE H5 SMD smd marking g12 H5 SMD H5 smd diodE smd H5 T ANPS071E IPB80N06S2L-H5
2N06LH5 Abstract: Q67060-S6055 Q67060-S6054 BSPP80N06S2L-H5 smd diode 1410 TC320 Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • 175°C operating temperature 5 mΩ 80 P- TO263 -3-2 • Avalanche rated V A P- TO220 -3-1 • dv/dt rated Type SPP80N06S2L-H5	Original	PDF	SPP80N06S2L-H5 SPB80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, Q67060-S6055 smd diode 1410 TC320
2N06LH5 Abstract: DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06 Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature • dv/dt rated Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054	Original	PDF	SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06