2N12 Search Results

2N12 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
LM2672N-12/NOPB		Texas Instruments	SIMPLE SWITCHER® 6.5V to 40V, 1A Low Component Count Step-Down Regulator 8-PDIP -40 to 125

2N12 Price and Stock

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Littelfuse Inc IXTP02N120P MOSFET N-CH 1200V 200MA TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP02N120P	Tube	10,594		1	1 $2.88 10 $2.88 100 $2.88 1000 $1.11662 10000 $1.11662	Buy Now
Newark	IXTP02N120P	Bulk	470		1	1 $2.61 10 $2.61 100 $1.72 1000 $1.24 10000 $1.13	Buy Now
Chip1Stop	IXTP02N120P	Tube	300			1 $2.3 10 $1.25 100 $1.13 1000 $1.13 10000 $1.13	Buy Now
CoreStaff Co Ltd	IXTP02N120P		1,200			1 $3.573 10 $1.802 100 $1.303 1000 $1.266 10000 $1.266	Buy Now
Susumu Co Ltd RG2012N-1272-D-T5 RES SMD 12.7K OHM 0.5% 1/8W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RG2012N-1272-D-T5	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.09188	Buy Now
	RG2012N-1272-D-T5	Cut Tape	5,000		1	1 $0.36 10 $0.254 100 $0.177 1000 $0.11852 10000 $0.11852	Buy Now
	RG2012N-1272-D-T5	Digi-Reel	5,000		1	1 $0.36 10 $0.254 100 $0.177 1000 $0.11852 10000 $0.11852	Buy Now
Infineon Technologies AG ISC032N12LM6ATMA1 TRENCH >=100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISC032N12LM6ATMA1	Digi-Reel	4,840		1	1 $4.86 10 $3.229 100 $4.86 1000 $1.83775 10000 $1.83775	Buy Now
	ISC032N12LM6ATMA1	Cut Tape	4,840		1	1 $4.86 10 $3.229 100 $4.86 1000 $1.83775 10000 $1.83775	Buy Now
Avnet Americas	ISC032N12LM6ATMA1	Reel	5,000	23 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $1.81506	Buy Now
Mouser Electronics	ISC032N12LM6ATMA1		1,787			1 $4.44 10 $3.02 100 $2.19 1000 $1.84 10000 $1.83	Buy Now
Newark	ISC032N12LM6ATMA1	Cut Tape	5,000		1	1 $4.09 10 $3.43 100 $2.78 1000 $2.11 10000 $2.11	Buy Now
Susumu Co Ltd RG2012N-123-W-T1 RES SMD 12K OHM 0.05% 1/8W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RG2012N-123-W-T1	Digi-Reel	2,984		1	1 $0.92 10 $0.645 100 $0.4396 1000 $0.32636 10000 $0.32636	Buy Now
	RG2012N-123-W-T1	Cut Tape	2,984		1	1 $0.92 10 $0.645 100 $0.4396 1000 $0.32636 10000 $0.32636	Buy Now
	RG2012N-123-W-T1	Reel	2,000		1,000	1 - 10 - 100 - 1000 $0.28875 10000 $0.28875	Buy Now
Infineon Technologies AG IPB022N12NM6ATMA1 TRENCH >=100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB022N12NM6ATMA1	Digi-Reel	945		1	1 $7.65 10 $5.197 100 $7.65 1000 $3.36376 10000 $3.36376	Buy Now
Mouser Electronics	IPB022N12NM6ATMA1		440			1 $7.05 10 $4.9 100 $3.65 1000 $3.36 10000 $3.36	Buy Now

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2N12 Datasheets (500)

Part	Manufacturer	Description	Datasheet Type	PDF
2N-12	Inmet	ATTENUATOR	Scan	PDF
2N12	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N120	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N120	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N120	Unknown	GE Transistor Specifications	Scan	PDF
2N120	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N120	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N120	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N120	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N120	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N1200	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N1200	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N1200	Unknown	Transistor Replacements	Scan	PDF
2N1200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

2N1200	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N1200	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
2N1200	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N1201	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N1201	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N1201	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

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2N12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA1211 Abstract: A5T4061 A8T4061 LOW-POWER SILICON PNP TP5372 ST8704 st823 BCY18 KT209D ST8014 Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 -60 -65 -70 75 -80 85 90 - 95 Y BR CEO hFE (V) V(BR)CEO 5 Manufacturer 2SA504 2N5448 BFT61 BFT61 TD2905 2N937 ST8700 KT214El BCY18 BCY18 2N3527 PN5138 2N5138 2N1255 BC351 BC351A BC351B	Original	PDF	2SA504 2N5448 BFT61 TD2905 2N937 ST8700 KT214El BCY18 2SA1211 A5T4061 A8T4061 LOW-POWER SILICON PNP TP5372 ST8704 st823 KT209D ST8014
PA6015A Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015 Text: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219	Original	PDF	2Nl199A 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 PA6015A 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
Untitled Abstract: No abstract text available Text: 2N1261 Ge PNP Power BJT 24.99 Transistors Transistors Bipolar Ge PNP Power Bipola. Page 1 of 1 Enter Your Part # Home Part Number: 2N1261 Online Store 2N1261 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics	Original	PDF	2N1261 2N1261 com/2n1261
Untitled Abstract: No abstract text available Text: 2N1295 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)85õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)1.0	Original	PDF	2N1295
2SB641 Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048 Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30	Original	PDF	2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 BC181 3SM diode CS9012 SF158 LOW-POWER SILICON PNP 2N924
Untitled Abstract: No abstract text available Text: 2N1232 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m	Original	PDF	2N1232
Untitled Abstract: No abstract text available Text: 2N127 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)10 I(C) Max. (A)8.0m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200	Original	PDF	2N127
Untitled Abstract: No abstract text available Text: 2N1249 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)30m Maximum Operating Temp (øC)155þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N1249
Untitled Abstract: No abstract text available Text: 2N129 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)4.5 V(BR)CBO (V) I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)30m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	PDF	2N129
2N1273 Abstract: No abstract text available Text: 2N1273 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15ã V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.27 h(FE) Max. Current gain.165	Original	PDF	2N1273
Untitled Abstract: No abstract text available Text: 2N1299 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20ã V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.35 h(FE) Max. Current gain.110	Original	PDF	2N1299
Untitled Abstract: No abstract text available Text: 2N1258 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)275m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)10m	Original	PDF	2N1258
Untitled Abstract: No abstract text available Text: 2N1200 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)700n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N1200
Untitled Abstract: No abstract text available Text: 2N1288 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)10ã V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.50 h(FE) Max. Current gain.300	Original	PDF	2N1288

Untitled Abstract: No abstract text available Text: 2N1204A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.	Original	PDF	2N1204A
Untitled Abstract: No abstract text available Text: 2N1256 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)275m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)10m	Original	PDF	2N1256
Untitled Abstract: No abstract text available Text: 2N1220 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N1220
Untitled Abstract: No abstract text available Text: 2N1204 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.	Original	PDF	2N1204
Untitled Abstract: No abstract text available Text: 2N1201 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)700n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N1201
2N120 Abstract: igbt 2n120 125OC power ic 5v 1A 034 Text: Preliminary Data Sheet High Voltage IGBT IXGY 2N120 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 5 A IC90 TC = 90°C 2 A	Original	PDF	O-252 2N120 728B1 2N120 igbt 2n120 125OC power ic 5v 1A 034
D2W220CD18 Abstract: D2W220CD D2N120CD D2W220CG18 D2N120CG saia 801C D2N120CF D2N220CD D2N220CF Text: mitièmm NO N-tra? ¡ 0 A rm s ^ [§ ] n [l^ © V r m s m A C 'J U — D 2N120CD D 2N120CF 2N120CG D 2N220CD D2N220CF D2N220CG « ( O R ^ 'C r t * ) m fè N O . (M ttP .3 0 ) : ( & ) 75g m m ± 7 E fà ut UL *f % %±m CSA ¡E/È 00 TUV i im m E tu < i V'rfjis-y—itntifc	OCR Scan	PDF	D2N120CD D2N120CF D2N120CG D2N220CD D2N220CF D2N220CG ttR30) D2W220CD18 D2W220CD D2W220CG18 saia 801C
4116 2n Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442 Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE	OCR Scan	PDF	2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
2n120 Abstract: Transistor 9012 ax 9012 transistor Text: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures m echanical d a ta W elded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.	OCR Scan	PDF	2N120 7S222 Transistor 9012 ax 9012 transistor
Untitled Abstract: No abstract text available Text: 1 1 1 ESSOELECTRONICS, INC. PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES ì 1 ] ] ] 1 1 11 1 1 1 fl 1 1 Device No 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719 2N1720 2N1721 2N1B89 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989	OCR Scan	PDF	2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719

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2N12 Search Results

2N12 Result Highlights (1)

2N12 Price and Stock

Littelfuse Inc IXTP02N120P

Susumu Co Ltd RG2012N-1272-D-T5

Infineon Technologies AG ISC032N12LM6ATMA1

Susumu Co Ltd RG2012N-123-W-T1

Infineon Technologies AG IPB022N12NM6ATMA1

2N12 Datasheets (500)

2N12 Datasheets Context Search

2SA1211

PA6015A

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2SB641

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2N1273

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2N120

D2W220CD18

4116 2n

2n120

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