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    2N1724A Search Results

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    2N1724A Price and Stock

    Microchip Technology Inc 2N1724A

    TRANS NPN 120V 5A TO61
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    Texas Instruments 2N1724A

    TRANSISTOR,BJT,NPN,120V V(BR)CEO,5A I(C),TO-210AC
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    Quest Components 2N1724A 1
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    2N1724A Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1724A Microsemi NPN Transistor, Package : TO-61 Original PDF
    2N1724A API Electronics NPN Transistors Scan PDF
    2N1724A API Electronics Short form transistor data Short Form PDF
    2N1724A API Electronics Short form transistor data Short Form PDF
    2N1724A Diode Transistor NPN Transistor Selection Guide - TO-111 and TO-61 Packages Scan PDF
    2N1724A Diode Transistor Transistor Short Form Data Scan PDF
    2N1724A General Diode Transistor Selection Guide Scan PDF
    2N1724A General Semiconductor Low Frequency Transistors Scan PDF
    2N1724A General Transistor Power Transistor Selection Guide Scan PDF
    2N1724A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1724A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1724A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1724A Unknown Vintage Transistor Datasheets Scan PDF
    2N1724A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1724A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1724A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1724A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1724A Unknown GE Transistor Specifications Scan PDF
    2N1724A New England Semiconductor BIPOLAR NPN TRANSISTOR TO-61 Scan PDF
    2N1724A New England Semiconductor NPN TO-61 Transistor Scan PDF

    2N1724A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: tuff 'j ioaucti, Una. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 TYPES 2N1722A, 2N1724A N-P-N TRIPIE-DIFFUSED MESA SILICON TRANSISTORS • • • • 50 Wafts at 100°C Case Temperature


    Original     		PDF 2N1722A, 2N1724A 2N1722A

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N1674

    Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


    Original     		PDF MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664

    IC 4025

    Abstract: 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487
    Text: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 5TÛ * N E S NPN TO-61 I max = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz See page 13 for isolated collector versions [ Type No. 2N1724 2N1724A 2N1725 2N2811 PNP Comple­ ment VCE (SAT) @ IC/lB


    OCR Scan     		PDF 0-300V 2N1724 1OQ012O 2N1724A 1OS018O 2N1725 2N2813/ 2N3489 2N3490 2N3491 IC 4025 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


    OCR Scan     		PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2N1724

    Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
    Text: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15


    OCR Scan     		PDF 0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N6590 2N6689 2N6690 2N6691 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489

    transistor 2N43

    Abstract: 2N3491 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKAGE DEVICE TYPE VcEO sus VOLTS (max) AMPS NPN TO-61 2N1724A 80 5 20-90@15 2N1724A 120 5 lAm M 2N1725 80 2N2811 • Ic ^*FE@ VcE<sat) IC/ ^ C E pr D * WATTS fr (MHz) l@2/,2 50 10 30-90@2/15 ,6@2/.2


    OCR Scan     		PDF 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 2N3491 transistor 2N43

    2N2632

    Abstract: No abstract text available
    Text: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60


    OCR Scan     		PDF 2N1208 2N1212 2N1616 2N1617 2N1618 2N1702 2N1724 2N1724A 2N1725 2N2632

    2N1724A

    Abstract: 2N1722A
    Text: TYPES 2N1722A, 2N1724A N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS • 50 Watts at 100°C Case Temperature • Maxim um rcs of 0.3 Ohm at 2 Amperes lc • Maxim um V fjE of 2 V o lts at 5 Amperes lc « in w • Minim um f f of 10 Megahertz S z 5 » CD H


    OCR Scan     		PDF 2N1722A, 2N1724A 2N1724A 2N1722A

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 [ Case 805 Type No. 2N1724 2N1724A PNP Comple­ ment VCE SAT @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (v VBE @ IC/VCE (V @ A/V) * N E S I(max) = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz NPN TO-61


    OCR Scan     		PDF 2N1724 2N1724A 2N6689 N6690 2N6691 2N6692 2N6693

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL « S EMI CON DU CT OR DE 1 3^105^0 □□□5GT5 fl 95D . 02092 D le = 5.0 AMPS - r • W 'CPi BVceo/ DEVICE TYPE PACKAGE 2N1208 2N1209 2N1212 2N1616 2N1617 TO -61 TO -61 TO -61 TO -61 TO -61 2N1618 2N1724 2N1724A 2N1725


    OCR Scan     		PDF 2N1208 2N1209 2N1212 2N1616 2N1617 2N1618 2N1724 2N1724A 2N1725 2N2632

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    10J2

    Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
    Text: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A


    OCR Scan     		PDF 0-300V 2N1724 2N1724A 2N1725 2N6588 2N6589 2N6590 2N6689 2N6690 2N6691 10J2 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813

    2N1724A

    Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
    Text: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE


    OCR Scan     		PDF 2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 2N3488 2N3489 2N3490 2N1724A TO61 2N3442 2N1724 2N1725 2N3773 2N3446

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    2N5730

    Abstract: 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285
    Text: Il 000012a NPNTO-111 isolated collector (cont’d) ZTB483&#39;52 D IO D E T R A N S I S l U K C O IN C . 8 4 D ~Ô Ô l2 6“ D1QDE TRâ(\)515TQB CQ„ JWC. (201) 666*0400 • Telex; 139-385 • Outslde NY & NJ area cali TOLL FREE 800-526-4581 FAX No. 201-675-5863


    OCR Scan     		PDF NPNTO-111 2T548352 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5730 2N5285

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


    OCR Scan     		PDF BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


    OCR Scan     		PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    TO61 package

    Abstract: 2N1724A 2N5540 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 VcEO Ic ^FE@ IC/ ^CE fr MHz l@2/.2 50 10 30-90@2/15 ,6@2/.2 50 10 5 50-150@2/15 l@2/.2 50 10 50 10 20-60@5/5 .5 @5/. 5 40 15 2N2812 50 10 40-120@5/5 ,5 @ 5/.5 40 15 2N2813 70 10 20-60@5/5 , 5 @ 5/.5


    OCR Scan     		PDF 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 2N3491 TO61 package 2N5540

    1040B

    Abstract: 2N3910 svt6062 2n5100
    Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.


    OCR Scan     		PDF 1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100

    2N2210

    Abstract: 2N2223 200H 250M T018 T072 2N1724A 706A
    Text: MfiE D m fll331fi7 □□□□433 31T • SMLB SEMELABtSEMELAB BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N 696 2N 697 2N 706 2N 706A 2N 718A 2N 720A 2N 722 2N 869 2N 869A 2N 914 2N 915 2N 916 2N 918 2N 930 2N 930A 2N1132 2N1483A 2N1484A


    OCR Scan     		PDF D00aM33 40min 75min 20min l/10m 25min 5/10m 2N2210 2N2223 200H 250M T018 T072 2N1724A 706A

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


    OCR Scan     		PDF 2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444