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    2N2219AL, Search Results

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    2N2219AL, Price and Stock

    Microchip Technology Inc 2N2219AL

    TRANS NPN 50V 0.8A TO39
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    TRANS NPN 50V 0.8A TO-5
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    TRANS NPN 50V 0.8A TO-5AA
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    TRANS NPN 50V 0.8A TO-5AA
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    Microchip Technology Inc JANSM2N2219AL

    TRANS NPN 50V 0.8A TO-5AA
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    2N2219AL, Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2219AL Microsemi Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 800MA TO-39 Original PDF
    2N2219AL Microsemi BJT, NPN, Switching Transistor, VCB0 75V, IC 0.8A - Pol=NPN / Pkg=TO5 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219AL Semelab Bipolar NPN Device in a Hermetically Sealed TO5 Metal Package - Pol=NPN / Pkg=TO5 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219AL Semico Chip: geometry 0400 polarity NPN - Pol=NPN / Pkg=TO5 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219AL Semico Type 2N2219AL Geometry 0400 Polarity NPN - Pol=NPN / Pkg=TO5 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original PDF
    2N2219ALJ Semico Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = 6.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.30 Original PDF
    2N2219ALJAN New England Semiconductor BJT, NPN, Switching Transistor, IC 0.8A Original PDF
    2N2219ALJAN New England Semiconductor NPN SWITCHING SILICON TRANSISTOR Original PDF
    2N2219ALJANS New England Semiconductor BJT, NPN, Switching Transistor, IC 0.8A Original PDF
    2N2219ALJANS New England Semiconductor NPN SWITCHING SILICON TRANSISTOR Original PDF
    2N2219ALJANTX New England Semiconductor NPN SWITCHING SILICON TRANSISTOR Original PDF
    2N2219ALJANTXV New England Semiconductor NPN SWITCHING SILICON TRANSISTOR Original PDF
    2N2219ALJS Semico Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = 6.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.30 Original PDF
    2N2219ALJTX New England Semiconductor BJT, NPN, Switching Transistor, IC 0.8A Original PDF
    2N2219ALJTXV New England Semiconductor BJT, NPN, Switching Transistor, IC 0.8A Original PDF
    2N2219ALJX Semico Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = 6.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.30 Original PDF