2N2905J |
|
Semelab
|
Screening Options Available =, Polarity = PNP, Package = TO39 (TO205AD), Vceo = 40V, IC(cont) = 0.6A, HFE(min) = 100, HFE(max) = 300, @ Vce/ic = 10V / 150mA, FT = 200MHz, PD = 0.6W |
|
Original |
PDF
|
2N2905J |
|
Semico
|
Package = TO-39, Level = Jantxv, Vceo (V) = 40, Vcbo (V) = 60, Vebo (V) = 5, Ic (A) = 0.60, (Power W) ta = 0.8, Rtja (C/W) = 175, Tstg/top (C) = -65 to +200, Hfe = 300, VCE(sat) (V) = 0.40 |
|
Original |
PDF
|
2N2905JANS |
|
New England Semiconductor
|
PNP SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
2N2905JANTX |
|
New England Semiconductor
|
PNP SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
2N2905JANTXV |
|
New England Semiconductor
|
PNP SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
2N2905JV |
|
Semico
|
Package = TO-39, Level = Jantxv, Vceo (V) = 40, Vcbo (V) = 60, Vebo (V) = 5, Ic (A) = 0.60, (Power W) ta = 0.8, Rtja (C/W) = 175, Tstg/top (C) = -65 to +200, Hfe = 300, VCE(sat) (V) = 0.40 |
|
Original |
PDF
|
2N2905JX |
|
Semico
|
Package = TO-39, Level = Jantxv, Vceo (V) = 40, Vcbo (V) = 60, Vebo (V) = 5, Ic (A) = 0.60, (Power W) ta = 0.8, Rtja (C/W) = 175, Tstg/top (C) = -65 to +200, Hfe = 300, VCE(sat) (V) = 0.40 |
|
Original |
PDF
|