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    2N292 Price and Stock

    Central Semiconductor Corp 2N2924-PBFREE

    TRANS NPN 25V TO92-3
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    DigiKey 2N2924-PBFREE Bulk 1,728 1
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    Central Semiconductor Corp 2N2925-PBFREE

    TRANS NPN 25V TO-92
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    DigiKey 2N2925-PBFREE Bulk 1,687 1
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    Microchip Technology Inc JANS2N2920

    TRANS 2NPN 60V 0.03A TO-18
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    DigiKey JANS2N2920 Bulk 243 1
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    Microchip Technology Inc 2N2920U

    NPN TRANSISTOR
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    DigiKey 2N2920U Bulk 47 1
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    Microchip Technology Inc 2N2920U 1,058 22 Weeks
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    Onlinecomponents.com 2N2920U
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    Microchip Technology Inc JAN2N2920

    NPN TRANSISTOR
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    2N292 Datasheets (329)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N292 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N292 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N292 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N292 Unknown Vintage Transistor Datasheets Scan PDF
    2N292 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N292 Unknown GE Transistor Specifications Scan PDF
    2N292 Unknown GE Transistor Specifications Scan PDF
    2N292 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N292 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N292 Semitron Alloy Junction Germanium Transistor Scan PDF
    2N292 Semitronics Alloy-Junction Germanium Transistors Scan PDF
    2N2920 Central Semiconductor Leaded Small Signal Transistor Dual - Pol=NPN / Pkg=TO77 / Vceo=60 / Ic=30m / Hfe=150-600 / fT(Hz)=60M / Pwr(W)=0.6 Original PDF
    2N2920 Motorola Bipolar Transistor, Dual NPN Silicon Annular Transistor - Pol=NPN / Pkg=TO77 / Vceo=60 / Ic=30m / Hfe=150-600 / fT(Hz)=60M / Pwr(W)=0.6 Original PDF
    2N2920 Semelab DUAL NPN PLANAR TRANSISTOR IN TO77 PACKAGE Original PDF
    2N2920 Semico Chip Type 2C2484 Geometry 0307 Polarity NPN - Pol=NPN / Pkg=TO77 / Vceo=60 / Ic=30m / Hfe=150-600 / fT(Hz)=60M / Pwr(W)=0.6 Original PDF
    2N2920 Solid State Devices TRANS GP BJT NPN 60V 0.03A TO-78 - Pol=NPN / Pkg=TO77 / Vceo=60 / Ic=30m / Hfe=150-600 / fT(Hz)=60M / Pwr(W)=0.6 Original PDF
    2N2920 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N2920 General Electric Semiconductor Data Book 1971 Scan PDF
    2N2920 Micro Electronics Semiconductor Devices Scan PDF
    2N2920 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    ...

    2N292 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2920ADCSM

    Abstract: No abstract text available
    Text: 2N2920ADCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


    Original     		PDF 2N2920ADCSM MO-041BB) 5/10u 2-Aug-02 2N2920ADCSM

    AN-31

    Abstract: Op Amp Circuit Collection Reference Vishay Ultronix Grand Junction CO Q81 Q81, 1K, 3500 ppm "multiple aperture Window Discriminator" noise detector using instrumentation amplifier CO Q81 zero crossing detector in rectifier circuit Vishay Q81
    Text: National Semiconductor Application Note 31 September 2002 Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. Section 1—Basic Circuits Inverting Amplifier Non-Inverting Amplifier Op Amp Circuit Collection


    Original     		PDF 2N2920 2N3728 LM394 AN-31 AN007057 AN-31 Op Amp Circuit Collection Reference Vishay Ultronix Grand Junction CO Q81 Q81, 1K, 3500 ppm "multiple aperture Window Discriminator" noise detector using instrumentation amplifier CO Q81 zero crossing detector in rectifier circuit Vishay Q81

    soc2920ahrb

    Abstract: 2N2920AHR marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V - 0.03 A Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N2920AHR 2N2920AHR soc2920ahrb marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N2920 MECHANICAL DATA Dimensions in mm (inches) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE ' '^0.7110.021) tit 10.034) TO-77 PACKAGE PIN 1 - Collector 1


    Original     		PDF 2N2920 300us 100uA 10uAto1mA -100uA

    common emitter amplifier

    Abstract: 2N2920DCSM 2N2920
    Text: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005)


    Original     		PDF 2N2920DCSM common emitter amplifier 2N2920DCSM 2N2920

    2N2920

    Abstract: 2N2929 2N2919
    Text: TECHNICAL DATA 2N2919 JTX, JTXV 2N2919L JTX, JTXV 2N2920 JTX, JTXV 2N2920L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/355 NPN SILICON SMALL-SIGNAL TRANSISTORS MAXIMUM RATINGS Ratings Symbol All Types Units Collector-Emitter Voltage 60 Vdc VCEO


    Original     		PDF 2N2919 2N2919L 2N2920 2N2920L MIL-PRF-19500/355 2N2929, 2N2920, 2N2929

    Untitled

    Abstract: No abstract text available
    Text: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005)


    Original     		PDF 2N2920DCSM

    2N2919

    Abstract: 2C2920KV CP2920 2N2920 MIL-PRF-19500L SEM 2006 G5241
    Text: Data Sheet No. CP2920 2N2919 2N2920 Chip Type 2C2920KV Geometry 0307 Polarity NPN 18 MILS 18 MILS B E E 18 MILS B REF: MIL-PRF-19500L/355 18 MILS Chip type 2C2920KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance


    Original     		PDF CP2920 2N2919 2N2920 2C2920KV MIL-PRF-19500L/355 2C2920KV MIL-PRF-19500L 2N2919, 2N2919 CP2920 2N2920 SEM 2006 G5241

    Untitled

    Abstract: No abstract text available
    Text: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643


    Original     		PDF BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924

    2SB641

    Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


    Original     		PDF 2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 BC181 3SM diode CS9012 SF158 LOW-POWER SILICON PNP 2N924

    Untitled

    Abstract: No abstract text available
    Text: 2N2920L Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m


    Original     		PDF 2N2920L

    Untitled

    Abstract: No abstract text available
    Text: 2N2920+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N2920 Freq60M

    Untitled

    Abstract: No abstract text available
    Text: 2N292A Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)20m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N292A

    Untitled

    Abstract: No abstract text available
    Text: 2N2920L+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m


    Original     		PDF 2N2920L

    2SB641 r

    Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


    Original     		PDF 2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 r 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524

    Untitled

    Abstract: No abstract text available
    Text: m 2N2920A \ \ SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920A is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-78 MAXIMUM RATINGS lc 30 mA V ce 60 V P diss 500 mW @ TA = 25 °C


    OCR Scan     		PDF 2N2920A 2N2920A

    n3860

    Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860 2N292

    2N2919

    Abstract: 2N2642
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920


    OCR Scan     		PDF 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2919

    2N2712

    Abstract: 2N2923 transistor 2n3391 transistor 2n2712 2n3394 2N3395 2N3398 mps6566 2N2711 2n3397
    Text: MPS/2N2923,4,5 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. CASE T0-92Á Their maximum power dissipation = 160mW at Ta=25°C. MPS TYPES


    OCR Scan     		PDF MPS/2N2923 160mWat T0-92A T0-92B MPS/2N2711 MPS/2N2712 12pFn@ MPS/2N2716 MPS/2N2924 2N2712 2N2923 transistor 2n3391 transistor 2n2712 2n3394 2N3395 2N3398 mps6566 2N2711 2n3397

    2N2926

    Abstract: 2n2926 transistor "to-98" package 2N226 100-C
    Text: G E SOLI» STATE 3875081 G E SOLID STATE Öl DE 1 3075051 ODITTOT 3 j ~ 01E 17909 D - Signal Transistors 2N2£26 T~2,?~/ T Silicon Transistors TO-98 The G E/RCA 2N2926 is a planar passivated N PN Silicon tran­


    OCR Scan     		PDF 2N2926 2N2926 100-C 2n2926 transistor "to-98" package 2N226 100-C

    Untitled

    Abstract: No abstract text available
    Text: mi Vrrr= mi S E M E 2N2920DCSM LAB DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 .4 0 ± 0 .1 5 (0 .0 5 5 ± 0 .0 0 6) 2 .2 9 ± 0.20 (0 .09 ± 0 .008)


    OCR Scan     		PDF 2N2920DCSM

    2N3643 TO-105

    Abstract: 2N3566 2N3569 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N3568 central
    Text: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT| 1l i m b 3 QDD0210 D | L .1 NPN EPOXY - SWITCHING AND GENERAL PURPOSE VCB V CE V EB hFE at *C V V V min max mA 2N2711 2N2712 2N2713 2N2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90 90 225


    OCR Scan     		PDF DD00S10 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926 2N3392 CBR12 2N3643 TO-105 2N3566 2N3569 2N3568 central

    Untitled

    Abstract: No abstract text available
    Text: CRO DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. Their maximum power dissipation = 160mW at Ta=25°C. CASE T0-92Á MPS TYPES MPS/2N2923,4,5 and similar types NPN SILICON


    OCR Scan     		PDF 160mW T0-92à MPS/2N2923 T0-92B MPS/2N2711 12pFn MPS/2N2712 MPSMPS/2N3398 200MHz Dec-95

    2N2713

    Abstract: 2N2714 2N2926 equivalent 2n2714 transistor 2N3404 2N2924 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor 2N2712
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N2926 equivalent 2n2714 transistor 2N3404 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor