2N3019
Abstract: 2N301 2N3019-2N3020 2N3020 2N302
Text: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation
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2N3019
2N3020
2N3019
2N3020
2N301
2N3019-2N3020
2N302
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2N3019
Abstract: 2n3019 equivalent 2N3020 2N3019 and applications 2n3019 transistor 2n30201
Text: NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages.
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2N3019
2N3020
2N3019
2N3020
2n3019 equivalent
2N3019 and applications
2n3019 transistor
2n30201
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2n3019 equivalent
Abstract: 2n3019 transistor test 2N3700 "nickel cap"
Text: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019
MIL-PRF-19500/391
2N3019
MIL-PRF-19500/391.
T4-LDS-0185,
2n3019 equivalent
2n3019 transistor
test 2N3700
"nickel cap"
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2N3019
Abstract: 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE
Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)
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2N3019
MIL-PRF-19500
2N3019J)
2N3019JX)
2N3019JV)
2N3019JS)
MIL-STD-750
MIL-PRF-19500/391
2N3019
2N3019J
2N3019JS
2N3019JV
2N3019JX
2N3019 DIE
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2n3019
Abstract: No abstract text available
Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)
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2N3019
MIL-PRF-19500
2N3019J)
2N3019JX)
2N3019JV)
2N3019JS)
2N3019JSR)
MIL-STD-750
MIL-PRF-19500/391
2n3019
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JANSL 2N3019S
Abstract: JANS2N3700UB 2n3019 equivalent
Text: JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for
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2N3019
2N3019S
MIL-PRF-19500/391
2N3019S
2N3019.
O-205AD)
T4-LDS-0098,
JANSL 2N3019S
JANS2N3700UB
2n3019 equivalent
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2n3019
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed for use in General Purpose Amplifier and High Speed Switching Applications
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2N3019
2N3020
C-120
2N3019
20Rev160102D
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2N3019 CDIL
Abstract: 2N3020 SPECIFICATIONS 2n3019 equivalent 2N3020 cdil 2n3019 equivalent 2N3019 CDIL 2N3019
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed For Use in General Purpose Amplifier And High Speed Switching Applications.
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2N3019
2N3020
C-120
2N3439-40Rev180701
2N3019 CDIL
2N3020 SPECIFICATIONS
2n3019 equivalent
2N3020
cdil 2n3019 equivalent
2N3019
CDIL 2N3019
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2N3019 CDIL
Abstract: 2N3019 2n3019 equivalent 2n3019 transistor 2N3020
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also Suitable for High Current Amplifier Applications
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ISO/TS16949
2N3019
2N3020
C-120
2N3019
20Rev160102D
2N3019 CDIL
2n3019 equivalent
2n3019 transistor
2N3020
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2n3019 equivalent
Abstract: 2N3019
Text: JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for
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2N3019
2N3019S
MIL-PRF-19500/391
2N3019S
2N3019.
O-205AD)
T4-LDS-0098,
2n3019 equivalent
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2N3019 DIE
Abstract: No abstract text available
Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)
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2N3019
MIL-PRF-19500
2N3019J)
2N3019JX)
2N3019JV)
2N3019JS)
MIL-STD-750
MIL-PRF-19500/391
2N3019 DIE
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2N3019 CDIL
Abstract: 2N3019 2N3020 power transistor 2n3020
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage
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2N3019
2N3020
C-120
040406E
2N3019 CDIL
2N3020
power transistor 2n3020
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Untitled
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N3019
800mW
57mW/Â
O-205AD)
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TRANSISTOR 3064
Abstract: TRANSISTOR 2N3019 2N3019
Text: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N3019
800mW
O-205AD)
TRANSISTOR 3064
TRANSISTOR 2N3019
2N3019
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2N3019
Abstract: JAN2N3700 2N3019S 2N3019S JAN
Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit
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2N3019,
2N3019S,
2N3700
MIL-PRF-19500/391
2N3019S
2N3019
JAN2N3700
2N3019S JAN
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2N3019
Abstract: No abstract text available
Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit
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2N3019,
2N3019S,
2N3700
2N3019S
2N3019/D
2N3019
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Untitled
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N3019
800mW
57mW/Â
O-205AD)
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage
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2N3019
2N3020
C-120
040406E
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pnp for 2n3019
Abstract: 2N4033 2N5020 2N3019 transistor 2N4033 2N3020 2N4031 BOX69477
Text: ! / 2N3019 2N3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES -a *4h 1 THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.
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2N3019
2N3020
2N3019,
2N3020
2N4033,
2N4031.
800mW
150mA
VCE-10V
500mA
pnp for 2n3019
2N4033
2N5020
transistor 2N4033
2N4031
BOX69477
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pnp for 2n3019
Abstract: No abstract text available
Text: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.
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2N3019
2N3020
2N3019,
2N3020
2N4033,
2N4031.
800mW
200OC
150mA
VCE-10V
pnp for 2n3019
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Untitled
Abstract: No abstract text available
Text: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC
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2N3019
2N3019
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2N4033
Abstract: No abstract text available
Text: 9 T ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 -a * <$h. TEE 2N3019, 2NJ020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033» 2N4031.
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2N3019
2N3019,
2NJ020
2N4033»
2N4031.
2N3020
800mW
200OC
150mA
VCE-10V
2N4033
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Untitled
Abstract: No abstract text available
Text: 3QE D • 7^237 0031153 G T * 3s - is SGS-THOMSON [MOÛiiô&iOTlIRMOÛS 2N3019 2N3020 S G S-THOMSON HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTIO N The 2N3019 and 2N3020 are silicon planar epitax ial NPN transistors in Jedec TO-39 metal case, de signed for high-current, high-frequency amplifier
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2N3019
2N3020
2N3019
2N3020
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2N3019
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN medium power transistor 2N3019 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to case • Amplifier and switching circuits.
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2N3019
2N3019
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