BC25SB
Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL
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Original
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HSE141
SF231
SF331
MMBT8598
MMBT2907A
PH2907A
PN2907A
2N2905A
2N2907A
2N576
BC25SB
MRF547
S02907A
425M
LOW-POWER SILICON PNP
KT361K
trw rf
NTM2907A
MRF549
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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Original
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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PDF
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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Original
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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Original
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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Original
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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PDF
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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Original
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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PDF
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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PDF
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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PDF
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MPS5771
Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage
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Original
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MPS3640
226AA)
U218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MPS5771
MPS8093
bf391
2n3819 replacement
MPS3640 equivalent
MPF3821
MPS6595
MAD130P
BC108 characteristic
2n3819 equivalent ic
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PDF
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BC237
Abstract: TRANSISTOR bc177b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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Original
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BAW156LT1
BAW156LT3
inch/10
BAW156LT1
236AB)
Junc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
TRANSISTOR bc177b
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PDF
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MPS6520 equivalent
Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage
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Original
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MPSW01
MPSW01A*
MPSW01A
226AE)
Junc218A
MSC1621T1
MSC2404
MPS6520 equivalent
BC237
transistor Vbe 2n2222
Characteristic curve BC107
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor MPSH17 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15
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Original
|
MPSH17
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
|
PDF
|
|
|
MPS2369 equivalent
Abstract: BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS2369 MPS2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage
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Original
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MPS2369
MPS2369A*
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MPS2369 equivalent
BC237
2N5551 circuit
2N2369A MOTOROLA
t1 bc140
BS107 "direct replacement"
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PDF
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motorola p1f
Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for
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Original
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OT-223
PZT2907AT1
PZT2222AT1
inch/1000
PZT2222AT3
inch/4000
unit218A
MSC1621T1
motorola p1f
hie for bc547b
BC237
transistor motorola 2n3053
Marking P1F
619 sc-59
P1F marking
MARKING CODE Zi sot363
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PDF
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2N3261
Abstract: 2N3261A 2N3251A 2n3250A 2n3251
Text: 2N3250, A 2N3251, A MAXIMUM RATINGS Sym bol Rating Collector-Emltter Voltage 2N32E0 2N3250A 2N3251 2N3251A V C EO 40 Collector-Base Voltage V cB O 50 Emlt1er»Bass Voltage vebo Vdc 60 Vdc 5.0 Vdc Collector Current ic 200 m Adc Total Device Dissipation @ T^ = 25°C
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OCR Scan
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2N3250,
2N3251,
2N32E0
2N3250A
2N3251
2N3251A
2N3261A
O-206AA)
2N3250.
2N3261
|
PDF
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2N3250
Abstract: 2N3251A
Text: 2N3250 2 N 3 2 5 1 ,A * M A XIM U M RATINGS Symbol 2N3250 2N32S1 2N3251A Unit Collector-Emitter Voltage v CEO -4 0 -6 0 Vdc Collector-Base Voltage v CB0 -5 0 Vdc v EBO _5.0 -6 0 Emitter-Base Voltage Collector Current 'c -2 0 0 mAdc Total Device Dissipation «• T ^ = 25SC
|
OCR Scan
|
2N3250
2N32S1
2N3251A
O-206AA)
2N32SlQ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N3250 2N3251,A* M AXIMUM RATINGS Symbol 2N3250 2N3251 2N3251A v CEO -4 0 -6 0 Vdc C o lle c to r-B a s e V o lta g e VCBO -5 0 -6 0 V dc E m itte r-B a s e V o lta g e Rating C o lle c to r -E m itte r V o lta g e Unit vebo -5 .0 Vdc C o lle c to r C u rre n t
|
OCR Scan
|
2N3250
2N3251
2N3251
2N3251A
O-206AA)
2N3250,
|
PDF
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2n3251
Abstract: No abstract text available
Text: 2N3250 2N3251,A* M A X IM U M RA TIN G S Symbol 2N3250 2N3251 2N3251A Unit C o lle c to r -E m it t e r V o lt a g e VCEO -4 0 -6 0 Vdc C o lle c t o r -B a s e V o lt a g e VCBO -5 0 -6 0 Vdc E m it te r - B a se V o lt a g e Vebo -5 .0 Vdc fc -2 0 0 m Adc
|
OCR Scan
|
2N3250
2N3251
2N3251
2N3251A
L3L75S4
|
PDF
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motorola 2N2270
Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
Text: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.
|
OCR Scan
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h3b7E54
007b70E
2N2896
2N3700#
2N2895
2N956
2N2897
2N718
2N2221A#
2N2222AI
motorola 2N2270
2N3947
2N956 MOTOROLA
JAN 2N2896
transistor motorola 2n3053
motorola 2N2270 to-18
mm3904
motorola 2N2219
2N4028
MM6427
|
PDF
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motorola 2N2270
Abstract: 2N5861 MOTOROLA
Text: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:
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OCR Scan
|
2N656
2N657
2N697
2N706
2N708
2N718
2N718A
2N869A
2N914
2N916
motorola 2N2270
2N5861 MOTOROLA
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PDF
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2N3819 MOTOROLA
Abstract: 2N3792 MOTOROLA motorola 2N3819 2n3819 replacement 2N3375 JAN 2N5339 JANS 2N3741 MOTOROLA 2N2484 motorola TO206AB 2N3715 MOTOROLA
Text: MOT OROL A SC XSTRS/R F 5bE D WË b 3 b 7 S 5 4 OOT O ÔS ? 1 T- 9/-AD MIL-QUALIFIED PRODUCTS Motorola M IL qualified components are ordered by adding suffix JAN, JTX, JTX V or JANS to the part numbers indicated in the following tables. Although Motorola will continue to sup
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OCR Scan
|
b3b7S54
MIL-STD-19500.
O-205AD
O-213AA
2N6603
2N6604
2N2857"
2N4957
2N5109
2N3819 MOTOROLA
2N3792 MOTOROLA
motorola 2N3819
2n3819 replacement
2N3375 JAN
2N5339 JANS
2N3741 MOTOROLA
2N2484 motorola
TO206AB
2N3715 MOTOROLA
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PDF
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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OCR Scan
|
06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
|
PDF
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