2N3700 DIE GEOMETRY Search Results

2N3700 DIE GEOMETRY Result Highlights (5)

Part	Manufacturer	Description
ISL70062SEHX/SAMPLE	Renesas Electronics Corporation	Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack
ISL70061SEHX/SAMPLE	Renesas Electronics Corporation	Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack
ISL73062SEHX/SAMPLE	Renesas Electronics Corporation	Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack
ISL73061SEHX/SAMPLE	Renesas Electronics Corporation	Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack
HS0-26CT31RH-Q	Renesas Electronics Corporation	Radiation Hardened Quad Differential Line Drivers, DIE, /

2N3700 DIE GEOMETRY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
pnp for 2n3019 Abstract: 2N3700 DIE 2N3700UB 2N3057 2N3019 2N3700 DIE GEOMETRY 2N3019UB 2N3019 DIE 2C3019 2N3019S Text: Data Sheet No. 2C3019 Generic Packaged Parts: Chip Type 2C3019 Geometry 4500 Polarity PNP 2N3019, 2N3057 Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general	Original	PDF	2C3019 2N3019, 2N3057 2C3019 2N3019S, 2N3019UB, 2N3057, 2N3057A, pnp for 2n3019 2N3700 DIE 2N3700UB 2N3057 2N3019 2N3700 DIE GEOMETRY 2N3019UB 2N3019 DIE 2N3019S
2n3700 geometry Abstract: 2N3700 DIE Text: 2N3700 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3700J • JANTX level (2N3700JX)	Original	PDF	2N3700 MIL-PRF-19500 2N3700J) 2N3700JX) 2N3700JV) 2N3700JS) MIL-STD-750 MIL-PRF-19500/391 2n3700 geometry 2N3700 DIE
2N3700 DIE Abstract: No abstract text available Text: 2N3700 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3700J • JANTX level (2N3700JX) • JANTXV level (2N3700JV)	Original	PDF	2N3700 MIL-PRF-19500 2N3700J) 2N3700JX) 2N3700JV) 2N3700JS) 2N3700JSR) MIL-STD-750 MIL-PRF-19500/391 2N3700 DIE
2N3700 DIE Abstract: 2N3700 Dose 2N3700 2N3700J 2N3700JS 2N3700JV 2N3700JX Text: 2N3700 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3700J • JANTX level (2N3700JX)	Original	PDF	2N3700 MIL-PRF-19500 2N3700J) 2N3700JX) 2N3700JV) 2N3700JS) MIL-STD-750 MIL-PRF-19500/391 2N3700 DIE 2N3700 Dose 2N3700 2N3700J 2N3700JS 2N3700JV 2N3700JX
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10	Original	PDF	MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237
BC237 Abstract: MPSA06 346 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste	Original	PDF	MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346
BC237 Abstract: MARKING CODE diode sod123 W1 K 2056 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	PDF	MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r	Original	PDF	MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237
2N16 Abstract: BC237 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	PDF	MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72
2n2222 h 331 transistors Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	PDF	MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
2N643 Abstract: BC237 MARKING DP SOT-363 DO204AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	PDF	MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA
BC237 Abstract: MMBD2005T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	PDF	MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237
BC237 Abstract: MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	PDF	MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor PNP Silicon 14 13 12 11 10 9 8 5 6 7 MPQ3762 PNP 1 2 3 4 14 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –40 Vdc	Original	PDF	MPQ3762 Char218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

BC237 Abstract: MPQ3799 BC141-16 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors MPQ3798 MPQ3799* PNP Silicon 14 13 12 11 10 9 8 *Motorola Preferred Device PNP 1 2 3 4 5 6 7 MAXIMUM RATINGS Rating Symbol MPQ3798 Collector – Emitter Voltage VCEO –40 Collector – Base Voltage	Original	PDF	MPQ3798 MPQ3799* MPQ3798 MPQ3799 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 MPQ3799 BC141-16
BC237 Abstract: S 178 A INTEGRATED CIRCUIT Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPQ7041 MPQ7042 MPQ7043* Quad Amplifier Transistors NPN Silicon 14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 5 *Motorola Preferred Device 6 7 TYPE B MAXIMUM RATINGS Rating Symbol MPQ7041 MPQ7042 MPQ7043 Unit Collector – Emitter Voltage	Original	PDF	MPQ7041 MPQ7042 MPQ7043* MPQ7043 MSC1621T1 MSC2404 MSD1819A MV1620 BC237 S 178 A INTEGRATED CIRCUIT
motorola p1f Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for	Original	PDF	OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
2N2222 MPS2222 npn transistor Abstract: transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for	Original	PDF	PZT651T1 inch/1000 PZT651T3 inch/4000 P218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N2222 MPS2222 npn transistor transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola
BF245 application note Abstract: transistor BF245 2n4036 equivalent BC237 H.P. Part Numbers to JEDEC Numbers 2N4036 2N3819 Application Note BF245 TRANSISTOR SOT-363 X3 SOT 363 marking CODE m4 6 21 X2 marking code sot 363 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD110DWT1 MBD330DWT1 MBD770DWT1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies	Original	PDF	MBD110DWT1 MBD330DWT1 MBD770DWT1 SO218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BF245 application note transistor BF245 2n4036 equivalent BC237 H.P. Part Numbers to JEDEC Numbers 2N4036 2N3819 Application Note BF245 TRANSISTOR SOT-363 X3 SOT 363 marking CODE m4 6 21 X2 marking code sot 363
SOT23 JEDEC standard orientation pad size Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	Original	PDF	OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
BC237 Abstract: MSA1022 msc2295 BF391 "direct replacement" Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for	Original	PDF	M218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 MSA1022 msc2295 BF391 "direct replacement"
EQUIVALENT FOR zt751 Abstract: zt751 TRANSISTOR zt751 BC237 transistor BF245 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for	Original	PDF	PZT751T1 inch/1000 PZT751T3 inch/4000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 EQUIVALENT FOR zt751 zt751 TRANSISTOR zt751 BC237 transistor BF245
BC237 Abstract: 2507 14PIN transistor BF245 A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Darlington Transistor MPQ6426 NPN Silicon 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage	Original	PDF	MPQ6426 Effective218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2507 14PIN transistor BF245 A
Untitled Abstract: No abstract text available Text: D a ta S h e e t No. 2 C 3 0 1 9 SEMICONDUCTORS G e n e ric P a c k a g e d P a rts : Chip Type 2C3019 Geometry 4500 Polarity PNP 2 N 3 0 1 9, 2 N 3 0 5 7 Chip type 2C3019 by Semicoa Semi conductors provides performance similar to these devices. Product Summary:	OCR Scan	PDF	2C3019 2C3019 2N3019, 2N3019S, 2N3019UB, 2N3057, 2N3057A, 2N3700, 2N3700UB, SD3019F,

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2N3700 DIE GEOMETRY Search Results

2N3700 DIE GEOMETRY Result Highlights (5)

2N3700 DIE GEOMETRY Datasheets Context Search

pnp for 2n3019

2n3700 geometry

2N3700 DIE

2N3700 DIE

BC237

BC237

BC237

BC237

2N16

2n2222 h 331 transistors

2N643

BC237

BC237

BC237

BC237

BC237

motorola p1f

2N2222 MPS2222 npn transistor

BF245 application note

SOT23 JEDEC standard orientation pad size

BC237

EQUIVALENT FOR zt751

BC237

Untitled