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    2N3707 TRANSISTOR Search Results

    2N3707 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N3707 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3707

    Abstract: 2N3711 2N3709 2n3708+equivalent
    Text: 2N3707 2N3710 2N3708 2N3711 2N3709 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3707 series devices are silicon NPN transistors designed for low level, low noise 2N3707 , low level, high gain (2N3708, 2N3709, 2N3710, 2N3711) applications.


    Original     		PDF 2N3707 2N3710 2N3708 2N3711 2N3709 2N3707) 2N3708, 2N3709, 2N3710, 2N3711 2N3709 2n3708+equivalent

    2N4058

    Abstract: 2N3707 2N3707 transistor transistor 2N3707 2N3707 pin out
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR 2N3707 TO-92 Plastic Package EC B For use in AF Small Signal Amplifier Stages Complementary 2N4058 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF ISO/TS16949 2N3707 2N4058 C-120 2N3707Rev270204E 2N4058 2N3707 2N3707 transistor transistor 2N3707 2N3707 pin out

    Untitled

    Abstract: No abstract text available
    Text: 2N3707 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3707 Freq100M eq100M

    2N4058

    Abstract: No abstract text available
    Text: 2N4058 2N4061 2N4059 2N4062 2N4060 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4058 series devices are silicon PNP transistors designed for low level, low noise 2N4058 , low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications.


    Original     		PDF 2N4058 2N4061 2N4059 2N4062 2N4060 2N4058) 2N4059, 2N4060, 2N4061,

    2n2712 data sheet

    Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0


    Original     		PDF 2N2712 2N2714 2N2923 2N2924 2N2925 2N4289 2N4400 2n2712 data sheet 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923

    2N4058

    Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


    Original     		PDF 2N2712 2N2714 2N2923 2N2924 2N4264 2N4287 2N4289 2N4400 2N4058 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393

    2N4058

    Abstract: 2N4061 2N4062 2N4060 2N3711 2N3707 2N4059
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4058 series types are Molded Epoxy Silicon PNP Transistors designed for low level, low noise 2N4058 and Low level, high gain (2N4059, 2N4060, 2N4061, 2N4062) applications. Recommended NPN complementary series is 2N3707 thru '


    OCR Scan     		PDF 2N4058 2N4058) 2N4059, 2N4060, 2N4061, 2N4062) 2N3707 2N3711. 2N4058 100yA 2N4061 2N4062 2N4060 2N3711 2N4059

    100ria

    Abstract: 25V6K RN5305 2N4494
    Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


    OCR Scan     		PDF 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494

    2N4058

    Abstract: 2N3711 2N3708 2n3710 2N3707 MICRO ELECTRONICS 2N4062 2N4061 2N3709 2N370 2N3707
    Text: 2N 3707 through 2N 3711 2N 4058 through 2N 4062 NPN . PNP SILICON AF SMALL SIGNAL TRANSISTORS . ' '=••' ' 2N3707 THROUGH 2N37H NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED


    OCR Scan     		PDF 2N5707 2N37H 2N4058 2N4062 O-92B 2N3707 2N3711 2N4062 200mA 2N3708 2n3710 2N3707 MICRO ELECTRONICS 2N4061 2N3709 2N370

    2n4494

    Abstract: MPS3709 MPS3711 2N4495 2N3707 2N3708 2N3709 PN2218 2N3711 MPS3707
    Text: ^ .L l " . mge » 702^ H 6 0 0 0 3 2 7 0 ig 3 ffiRHM t-27-ö\ rT7m • Transistors • NPN Transistors TO-92) General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3710 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495


    OCR Scan     		PDF T-27-Ã 2N3707 MPS3707 100nA 100/iA 2N3708 MPS3708 2N3709 MPS3709 2n4494 MPS3711 2N4495 PN2218 2N3711

    2n4058

    Abstract: 2N3707 2N4062 2N4061 2N3710 2N370 2N3708 2N3709 ic 4058 2N4059
    Text: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4062 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED


    OCR Scan     		PDF 2N3707 2N37H 2N4058 2N4062 2N3707 2N37H 2N4058 200mA 100mA 2N4062 2N4061 2N3710 2N370 2N3708 2N3709 ic 4058 2N4059

    Untitled

    Abstract: No abstract text available
    Text: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4 0 6 2 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I •¡Hi THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED


    OCR Scan     		PDF 2N3707 2N3711 2N4058 2N4062 O-92B 2N37H 2N4058 2N3708

    fr 3707 z

    Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
    Text: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil


    OCR Scan     		PDF 2N3707 2N3711, A5T3707 A5T3711, A8T3707 A8T3711 100-mil 2N4058 2N4062, 5T4058 fr 3707 z fr 3709 z fr 3709 2N3711 2n3711 TY A5T3711

    BC548 Texas Instruments

    Abstract: SX3711 BC182L complementary 2N3708 BC183L BC214 alternative BC182 BC547 2n4058 bc182l pin configuration pnp transistor BC557
    Text: 1 Silect Coding Silect transistors are coded on the indexing flat of the TO-92 outline. Pin Configurations The majority of Silect transistors shown are available in several alternative case outlines or pin configurations which include many pre-formed lead types. Devices are therefore available


    OCR Scan     		PDF SX4061 2N4061T05 2N3709, 2N4062 SX4062 2N4062T05 2N3710, 2N3711 BC546 BC547 BC548 Texas Instruments SX3711 BC182L complementary 2N3708 BC183L BC214 alternative BC182 BC547 2n4058 bc182l pin configuration pnp transistor BC557

    2N915

    Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
    Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF DMB105 2C3904 2N915 2N916 2N2716* 2N2923 2N2924 2N2925 2N2926* 2N3390* 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392

    2N3606

    Abstract: 2N3605 2N3564 2N3111 2N3694 2N3693 2n3194 2N3417 2N3662 2N3663
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Vceo ^CEO V EBO (V) Min (V) Min (V) Min PD 'c <W) (A) Tc=25"q 2N3417 50 50 5 0.625 0.1 2N3564 30 15 4 bßo VCB ' c e s V CE


    OCR Scan     		PDF 2N3417 O-92-1 2N3564 2N3605 2N3606 2N36Q7 2N3858A 2N3606 2N3605 2N3111 2N3694 2N3693 2n3194 2N3662 2N3663

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^cuo (V) Min ^CEO ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (W) *c (A) @Tc=25“c *C BO (mA) VCB @ (V) Ic e s V CE W (V) Max Max "re Min @ t * (mA)


    OCR Scan     		PDF 2N3417 2N3564 2N3860 2N3877 O-92-1 2N3877A 2N3900 2N3900A 2N3901

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-92 Case TO-92 TYPE MO. FAMILY UEAD CODE II•FE VC 8 0 v CEO VS0O *CBO * V (V) (V) W MM •V ce s MM MM *>CES *C6V MAX evcE M VCE(5A D *c c Ob <mA} 00 (mA) ’hfgftlcHZ) NM MAX ♦r NF *off m {MHz) (dB) *^rb MAX TYP MM MAX MAX


    OCR Scan     		PDF 2N2712

    2N2712

    Abstract: 2N3606 2N3397 2N3564
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings V CEO (V) Min (V) Min 18 13 (V) Min 5 PD (W) (A) §Tfc25“c (mAI Max 0.1 0.5 0.625 *CBO va i *CES (V) (mA) Max 18 hrE '“CF @ (V L @ Min Max 75 225 lc X (mA) 2 ^CE V CE(SAT) (VI (V) Max V BE(SAn


    OCR Scan     		PDF O-92-1 2N2712 2N3606 2N3397 2N3564

    2N3707 DIODE

    Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


    OCR Scan     		PDF ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 2N3707 DIODE 2n4058 2N2475 BC107 equivalent Competitive BC108

    2N5551YCECB

    Abstract: No abstract text available
    Text: I Small Signal Transistors TO-92 Case TO-92 T Y P E NO. F A M IL Y LEAD v E B O *C B O Ï V C BC nA (V) (V) (V) * 'C E S •V CES * *'C E V MIN MIN MAX (V) M IN 2N2712 NPN AMPL/SWITCH ECB 18 18 5.0 500 18 v CE hFE VC BO v CEO CODE (V) ® I C V C E (S A T ) @ , C


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444


    OCR Scan     		PDF 000356b 2N3416 2N3417 TP3444 TP3564 TP3565 TP3566 TP3567 TP3568 TP3569

    n3904

    Abstract: 2N3706 2N4289 "low noise" npn QDD2421 2n4287
    Text: Small Signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VCBO v CEO v EBO •CBO ä V c B C nA (V) (V) (V) (V) '■c e s *VCES *'CEV MIN MIN MIN MAX vCE © l c v C E (S i L T ) 'C c ob h FE (V) (mA) (V) (mA) ‘hfe(1 kHZ) MIN MAX NF ‘off


    OCR Scan     		PDF 2n2712 2n2714 2n2923 2n2924 2n2925 2n2926 2n4125 2n4126 2n4264 2n4287 n3904 2N3706 2N4289 "low noise" npn QDD2421

    silect

    Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
    Text: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level


    OCR Scan     		PDF 2N929 2N930 2N2483 N2484 2S501 2S502 2S503 2N3707 2N3012 TIS50 silect N4060 bc182l 2N3709