2N3820
Abstract: 2n3820 transistor 2n3820 equivalent 2N3820 APPLICATION
Text: 2N3820 2N3820 P-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor
|
Original
|
2N3820
2N3820
2n3820 transistor
2n3820 equivalent
2N3820 APPLICATION
|
PDF
|
2n3820
Abstract: No abstract text available
Text: 2N3820 2N3820 P-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source PNP Epitaxial Silicon Transistor
|
Original
|
2N3820
2n3820
|
PDF
|
Untitled
Abstract: No abstract text available
Text: , LJ nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3820 P-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources.
|
Original
|
2N3820
27TYP
|
PDF
|
2N2608
Abstract: 2N2609 PN4360
Text: tSemL-CondiLctoi iPioduati, {Jnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Junction FETs* Low Frequency/ Low Noise N-Channel CASE TYPE NO. TO-72 TO-18 (PF) MAX Crss (PF) MAX 10 6.0 Gfs Goss
|
Original
|
2N4220
2N4221
2N4222
2N4338
2N5461
2N5462
PN4360
2N2608
2N2609
PN4360
|
PDF
|
2SJ72BL
Abstract: PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D
Text: JUNCTION FETs Item Number Part Number Manufacturer gt. V BA GSS loss (V) (A) Min (S) Max 6.0m 6.0m 6.0m 6.0m 8.0m 9.0m 9.0m 15m 15m 15m Him 15m 15m 15m 15m 15m 15m 15m 15m 30m 1.0m 1.0m 1.5m 1.5", 800u 1.0m 1.0m 2.2m 2.2m 3.0m 3.0m 1.3m 0.8m 800u 800u 1.0m
|
Original
|
2N2500
2N3332
2N2498
2N3330
2N4089
UCS51
SMP3331
TMPF3331
TP3331
TMPF3820
2SJ72BL
PN4342
2SJ74GR
2SJ72GR
2SJ72-G
2sj74bl
2Sj72
2SJ74Y
2N4360
diode 20D
|
PDF
|
1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
|
Original
|
1N100
1N100A
1N101
1N102
1N103
1N104
1N108
1N111
1N112
1N113
1N4548
1N4008
Diode 1N4008
1N4008 diode
1N1744A
1n4148
1N523b
2N4418
BAX15
1n5428
|
PDF
|
2n5248
Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640
|
Original
|
2N5555
2N5638
2N5639
2N5640
PN4360
PN5033
2n5248
PF5101
2N5248 equivalent
2N5247
PN4857
PN4858
U1897
2N5245
PF5301-2
2N5460
|
PDF
|
NPD5564
Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Text: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership
|
Original
|
IntegraU404
LSU405
LSU406
LS841
LS842
LS421
LS422
LS423
LS424
NPD5564
NPD5566
BFY91
IMF3958
2N3050
NF5458
Fairchild E212
MP842
J9100
SST5638
|
PDF
|
transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .
|
Original
|
|
PDF
|
LM1011N
Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44
|
Original
|
ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
LM1011N
JRC386D
X0238CE
UA78GKC
M51725L
MJ13005
AN6677
HA11749
MN8303
sn76131n
|
PDF
|
transistors BC 543
Abstract: F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459
Text: NPN Multiple Chip Transistors Device No. [Mark] MMPQ2369A Case Style SO-16 S3 V CBO V VCES* EBO (V) (V) Min (V) Min Min VCEO 15 40 4.5 I CBO ICES* (nA) Max 400 @ VCB (V) Min 20 40 40 30 20 h FE V CE 10 10 30 100 0.35 1 0.4 1 0.2 0.2 & @ Max (mA) (V) 120
|
Original
|
MMPQ2369A
SO-16
FMBA14
FFB2222A
FMB2222A
MMPQ2222A
transistors BC 543
F245B
BSR57M5
fmba0656
TJ309
f256c
f245a
PN5432
PN4857
2n 5459
|
PDF
|
jrc386d
Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50
|
Original
|
ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
SN76131N
LM1011N
ne545b
HA1457W
X0238CE
upc1018c
UA78GKC
MJ13005
MN8303
|
PDF
|
E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
|
Original
|
LS422
LS423
LS424
LS425
LS426
LS832
LS833
LS4391
LS5911
E112 jfet
siliconix E412
NPD5564
jfet e300
NPD5566
DATA SHEET OF FET BFW10
E402 dual jfet
E430 jfet
E310 JFET N
NPD5565
|
PDF
|
jrc386d
Abstract: LM3171 LM1011N MJ13005 UA78GKC upc1018c x0137ce PLL02A MN8303 HA1457w
Text: ECG To JEDEC and Japanese part numbers ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 2SA1265N ECG38 ECG39 ECG40 ECG41 ECG42
|
Original
|
ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
LM3171
LM1011N
MJ13005
UA78GKC
upc1018c
x0137ce
PLL02A
MN8303
HA1457w
|
PDF
|
|
|
2N3820
Abstract: No abstract text available
Text: Philips Components D ata sheet status Preliminary specification date of issue October 1990 DESCRIPTION Silicon p-channel junction field-e ffect transistor in a plastic TO-92 envelope. It is intended fo r use in general purpose am plifiers. 2N3820 P-channel J-FET
|
OCR Scan
|
2N3820
MBB181
003SA4b
S3T31
Q03Sfl4fl
2N3820
|
PDF
|
TIS58
Abstract: TIS58 fet TIS88A TIS88 TIS59 BF245 BF256LC A5T4261 BF246 BF256LA
Text: S FET's Silect For General Purpose Amplifiers Type No. Case TIS58 TIS59 T092 TQ92 O 5 Pol Û . IGSS CD I max. nA V n c 'it i A N N 25 2b O ft 4 4 F, 5 5 5 BF244A* BF244B* BF244C* T092 T092 T092 N N N N 2N3819 T092 N 25 2 2N3820 T092 P 20 20 2 N5460 T092 P
|
OCR Scan
|
TIS58
TIS59
BF245
BF244A*
BF245A
BF244B*
BF245B
BF244C*
BF245C
2N3819
TIS58 fet
TIS88A
TIS88
BF256LC
A5T4261
BF246
BF256LA
|
PDF
|
2n3820 transistor
Abstract: TIC 106b 2n3820
Text: TYPE 2N3820 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 7 9 4 7 , A U G U S T 1 9 6 5 -R E V IS E D J U L Y 1968 SILECTf FIELD-EFFECT TRANSISTOR * For Industrial and Consumer Small-Signal Applications m e c h a n ic a l d a t a
|
OCR Scan
|
2N3820
IL-STD-202C,
2n3820 transistor
TIC 106b
|
PDF
|
2N3820
Abstract: P-Channel JFET 2n3820 transistor
Text: PHI L IP S 41E D INTERNATIONAL Philips Components D ata sheet status Preliminary specification d ate of Issue October 1990 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope, it is intended for use in general purpose amplifiers.
|
OCR Scan
|
711002b
2b337
2N3820
Q02b33ô
711005t
002b340
2N3820
P-Channel JFET
2n3820 transistor
|
PDF
|
F245B
Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Text: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten
|
OCR Scan
|
100-MHz
F245B
BF256
2N3820
BC264
U1898E
BFS21A
MPF105
vergleichsliste
BF320
TIS69
|
PDF
|
TIS34
Abstract: tis58 TIS25 TIS59 2n2386 2N3328 TIS42 2N2499 2N3820 silec
Text: Field Effect Transistors No. £^ o 1 ! C S o w U “ S ilic o n P -C h a n n e l F ie ld Effect S ilic o n N -C h a n n el F ield Effect S ilic o n N -C h a n n el D ual M atched Field Effect Germ anium P Channel Field Effect V DG V !e mA p p p p p p 20 20
|
OCR Scan
|
2N2386
2N2497
N2498
N2499
2N2S00
2N3328
2N3330
2N3331
N3332
2N3573
TIS34
tis58
TIS25
TIS59
2N3328
TIS42
2N2499
2N3820
silec
|
PDF
|
2N4360
Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.
|
OCR Scan
|
MFE2001
MFE2C04
MFE2005
MFE2006
MFE2133
MPF102
MPF108
MPF109
MPF111
MPF112
2N4360
2N3459
J411 fet
Solitron 2N3821
U1898E
2N5906
TIS58
MEM511
2N3920
uc451
|
PDF
|
2N3819 MOTOROLA
Abstract: 2N3792 MOTOROLA motorola 2N3819 2n3819 replacement 2N3375 JAN 2N5339 JANS 2N3741 MOTOROLA 2N2484 motorola TO206AB 2N3715 MOTOROLA
Text: MOT OROL A SC XSTRS/R F 5bE D WË b 3 b 7 S 5 4 OOT O ÔS ? 1 T- 9/-AD MIL-QUALIFIED PRODUCTS Motorola M IL qualified components are ordered by adding suffix JAN, JTX, JTX V or JANS to the part numbers indicated in the following tables. Although Motorola will continue to sup
|
OCR Scan
|
b3b7S54
MIL-STD-19500.
O-205AD
O-213AA
2N6603
2N6604
2N2857"
2N4957
2N5109
2N3819 MOTOROLA
2N3792 MOTOROLA
motorola 2N3819
2n3819 replacement
2N3375 JAN
2N5339 JANS
2N3741 MOTOROLA
2N2484 motorola
TO206AB
2N3715 MOTOROLA
|
PDF
|
TIS69 equivalent
Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Text: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the
|
OCR Scan
|
2N5045,
2N5046,
2N5047
TIS69 equivalent
2N3575
Germanium itt
TIS59
TIS58
2N2386
TIS26
|
PDF
|
TIS88A equivalent
Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.
|
OCR Scan
|
20x40
111x109
TIS88A equivalent
2N3456 equivalent
J411 fet
2n5952 equivalent
2n3820 equivalent
2N5248 equivalent
fet 2N4304
2n5245 equivalent
2N4304 equivalent
2N5454 equivalent
|
PDF
|
