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    2N3823 FET Search Results

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    2N3822

    Abstract: 2N3823 2n3821 2N3823 fet datasheet TO72 package n-channel jfet 2N3822 2N3823 equivalent 2N3821 JANTXV 2N3821 JANTX 2n3821 fet br 6500
    Text: TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices 2N3821 Qualified Level 2N3822 JANTX JANTXV 2N3823 MAXIMUM RATINGS Parameters / Test Conditions Symbol Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current


    Original     		MIL-PRF-19500/375 2N3821 2N3822 2N3823 O-206AF) Gate-Sour822 2N3822 2N3823 2n3821 2N3823 fet datasheet TO72 package n-channel jfet 2N3822 2N3823 equivalent 2N3821 JANTXV 2N3821 JANTX 2n3821 fet br 6500 PDF

    2N3823

    Abstract: 2N3822 2N3821 2N3821 JANTX
    Text: TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices 2N3821 Qualified Level 2N3822 JANTX JANTXV 2N3823 MAXIMUM RATINGS Parameters / Test Conditions Symbol Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current


    Original     		MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3822 2N3823 O-206AF) 2N3821 JANTX PDF

    2N3823 equivalent

    Abstract: 2N3822 equivalent 2N3822 2N3823 2N3821 2N3823 fet datasheet
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent


    Original     		MIL-PRF-19500/375 2N3821 2N3822 2N3823 100MHz 200MHz 2N3823 equivalent 2N3822 equivalent 2N3822 2N3823 2N3821 2N3823 fet datasheet PDF

    2N3822

    Abstract: 2N3823 equivalent 2n3823 2N3822 equivalent 2N3821 2N3823 JANTX "Power over Ethernet"
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 MQ = JAN Equivalent


    Original     		MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3823 2N3823 equivalent 2N3822 equivalent 2N3823 JANTX "Power over Ethernet" PDF

    UC734

    Abstract: KE4416 2N3821 2n5103 UC250 Solitron 2N4417
    Text: field effect transistors 160 AMPLIFIERS VHF/UHF J FET/N-CHANNEL,SINGLE TYPE 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 2N5105 KE4416 UC734 UC734E Vp C ,•• pf Volts Max. Max. *BVGSS Volts PA"CKAGE Min. IGSS nA Max. I DSS rnA


    Original     		2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 UC734 KE4416 UC250 Solitron 2N4417 PDF

    Untitled

    Abstract: No abstract text available
    Text: JANS Program New Product Announcement New England Semiconductor announces its New Line of Junction Field Effect Transistors JFET's These devices will be available as JAN, JANTX, JANTXV as well as commercial. Available families are: MIL-PRF-19500/375 - 2N3821, 2N3822, 2N3823


    Original     		MIL-PRF-19500/375 2N3821, 2N3822, 2N3823 MIL-PRF-19500/385 -2N4856, 2N4857, 2N4858, 2N4860, 2N4861 PDF

    3N225

    Abstract: BF805 3N201 3N211 BF802 3N202 BF806 BF800 3N204 3N205
    Text: mTexas In s tru m e n ts FET's For V H F A m p lifie rs and M ix e rs Type No. Case I g s s Vp Ciss Crss Pol max. max max. max. nA V pF 2N3823 T072 N 0.5 8 6 2N4416 T072 2N4416A T072 N N 0.1 0.1 6 6 4 4 0.8 0.8 4000 400 4000 10 2 N5549 N 0.25 6 8 2 6000 T018


    OCR Scan     		2N3823 2N4416 2N4416A N5549 3N201 3N202 3N203 N203A 3N204 BF800 3N225 BF805 3N211 BF802 BF806 3N205 PDF

    2N3822 equivalent

    Abstract: transistor 2N3823 2N3822 2N3823 2N3823 equivalent 2N3823 fet datasheet 2n3821 2N382 TO72 package n-channel jfet 2N3822 2n3821 fet
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE


    Original     		MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB 2N3821, 2N3822, 2N3823, 2N3822 equivalent transistor 2N3823 2N3822 2N3823 2N3823 equivalent 2N3823 fet datasheet 2n3821 2N382 TO72 package n-channel jfet 2N3822 2n3821 fet PDF

    2N3823

    Abstract: 2N3821UB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE


    Original     		MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB 2N3821, 2N3822, 2N3823, 2N3823 2N3821UB PDF

    uc734

    Abstract: 2N3823 fet 2N4116 DIE CHIP 2N3823 2N5105 2n5104 2N3452 2N3823
    Text: [^ E UJ©TF ©ÄTT/ÄtL© N-CH ANNEL JU N CTIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum 013" (0 737mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 0 1 2 ” _ (0 305mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		737mm) 305mm) 0254mm) 100mV, uc734 2N3823 fet 2N4116 DIE CHIP 2N3823 2N5105 2n5104 2N3452 2N3823 PDF

    UC734

    Abstract: 2n3452
    Text: N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum lif t •T* 013" 0 737mm Backside Contact: 3,000 A Gold o r ASSEM BLY RECOMMENDATIONS . 01 2 ”_ (0 305mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .


    OCR Scan     		737mm) 305mm) 0254mm) 100Hz 2N4116, 2N3823, 2N3452, 2N5104, 2N5105, UC734, UC734 2n3452 PDF

    AN478A

    Abstract: AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN423/D SEMICONDUCTOR APPLICATION NOTE AN423 FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Freescale Semiconductor, Inc. Prepared by: Roy C. Hejhall Applications Engineering Amplifier design theory utilizing the two port network


    Original     		AN423/D AN423 AN478A AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823 PDF

    F245B

    Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
    Text: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten


    OCR Scan     		100-MHz F245B BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69 PDF

    ST72A

    Abstract: ST76A ST70A st74a SN 0727 TO 92 BS170 Field Effect Transistors 2N7000 TO-92 n-channel fet to-92 BST100
    Text: Small Signal Leaded Devices Field Effect Transistors D -M O S FET Pkg Type ft yfs typ (mA/V) VGS (th) (V) *on max (ns) toff max (ns) 500 120 500 50 50 50 50 50 175 175 250 250 300 300 300 300 250 250 500 300 250 300 750 300 210 150 2.5 15 2.5 15 25 25 25


    OCR Scan     		2N7000 BS107 BS170 BSD212 BSD213 SD214 BSD215 O-92VAR. ST72A ST76A ST70A st74a SN 0727 TO 92 BS170 Field Effect Transistors 2N7000 TO-92 n-channel fet to-92 BST100 PDF

    LM103 zener

    Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
    Text: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-


    Original     		2N4339 2N4393 2N4393 LM103 zener jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208 PDF

    2ns484

    Abstract: mpf102 2N3819 ti MPF112 2N5485 PN4416 U311 2N5078 2N4224 J271
    Text: s^nalFET Product Specifications confd FET Product Specifications D E V IC E RF A M PLIFIERS GEOM ETRY (Section 4) <3 u ) Z n 0. UL LL U- mJ ^ ^ ^ cc oc oc cc XX Z Z Z Z Z Z 1 LL ^ ^ X X X I X X N N N ww NXXN NNIXXXN NN NN Z Z Z Z Z Z Z Z Z û I o I Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z


    OCR Scan     		J232-18 J270-18 2N3819 2N3823 2N4223 2N4224 2N4416 2N4416A 2N5078 2NS484 2ns484 mpf102 2N3819 ti MPF112 2N5485 PN4416 U311 2N5078 2N4224 J271 PDF

    FET BFW11

    Abstract: FET BFW10 OF FET BFW11 BFW10 FET OF FET BFW10 BFW12 BF245A sot23 BFW10 n-channel fet BF245A j310 FET
    Text: 48 RF/Microwave Devices Small-Signal Field-Effect Transistors Junction FET's These are fo r applications in the VHF range. Principal features of these products are their low noise, high transfer conductance and their high input impedance, the latter, in particular, m inim izing signal losses and helping to sim plify


    OCR Scan     		BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C BF256A BF256B BF256C FET BFW11 FET BFW10 OF FET BFW11 BFW10 FET OF FET BFW10 BFW12 BF245A sot23 BFW10 n-channel fet BF245A j310 FET PDF

    n-channel fet to-92

    Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
    Text: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685


    OCR Scan     		2N3684 2N3685 2N3686 2N3687 T0-72 2N3821 2N3822 2N3823 n-channel fet to-92 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan PDF

    mfe2001

    Abstract: 2N5245 MPF112 2N3824 MPF256 2n5247 FET 2N4416 2N3823 MOTOROLA 2N5670 MFE2000
    Text: MOTOROLA SC O I O D E S / O P T O J 34 DF|b3t.7ESS 0030030 5 | 6 3 0 7 2 5 5 M O T O R O L A SC <D I O D E S / O P T O 34C 38038 r-iT-ir FIELD-EFFECT TRANSISTORS DICE continued) 2C4416 die no. LINE SOURCE — DFM146 This die provides performance equal to or better than that of


    OCR Scan     		DFM146 2N3823 2N3824 2N3966 2N4223 2N4224 2N4416 2N5245 2N5246 2N5247 mfe2001 MPF112 MPF256 FET 2N4416 2N3823 MOTOROLA 2N5670 MFE2000 PDF

    2n3819 replacement

    Abstract: MPF102 JFET j310 replacement mpf102 replacement J210 Replacement 2N3819 cross reference MPF102 JFET data sheet 2N5485 mpf102 j305 replacement J300 replacement
    Text: Siliconix 7-23 s^nalFET Product Specifications confd FET Product Specifications D E V IC E RF A M PLIFIERS GEOM ETRY (Section 4) <3 u) Z 0. UL LL U- mJ ^ ^ ^ cc oc oc cc LL ^ ^ XX 1X X X I X X N N N w w N X X N N N I X X X N N N N N Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z û I o I Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z


    OCR Scan     		2N6453 2N4393 2N4392 2N6454 2N3821 2N6483 2N6484 2N4416 2n3819 replacement MPF102 JFET j310 replacement mpf102 replacement J210 Replacement 2N3819 cross reference MPF102 JFET data sheet 2N5485 mpf102 j305 replacement J300 replacement PDF

    TIS34

    Abstract: MPF108 MN2500 MPF106 nf500 MPF-102 ke4416 2n4339 national 2N5485 mpf102
    Text: N-Channel FETs RF amps BVGSS "BVOGO IVI M,n ease Type No. Styl. lOSS ImAI IGSS InAl Max Min Max Yfl I"mhol M,n @ , IMHzl Vploffl IVI Max C,a IpFI Max Gp lelll Min Cra IpFI Max @ , IMHz! NF IdBI @ Max IM~z!@ R""n Iknl Proc. No. 2N3821 TO•72 50 01 05 25 1500


    Original     		2N3458 2N3469 2N3460 2N3684 2N3685 2N3686 2N3687 2N4338 2N4339 2N4340 TIS34 MPF108 MN2500 MPF106 nf500 MPF-102 ke4416 2n4339 national 2N5485 mpf102 PDF

    TIS69 equivalent

    Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
    Text: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the


    OCR Scan     		2N5045, 2N5046, 2N5047 TIS69 equivalent 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26 PDF

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


    OCR Scan     		O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet PDF

    FET U310

    Abstract: FET 2N4416 2N2606 2N5397-2N5396 2N5396-2N5397 2N5906 2N3687A 2n4117 jan
    Text: -Jbtttron Devices. Inc mw TO §MUË<gÏÏ \F\W\R IN TRO DUCTIO N TO THE F E T S SDF1001 thru 1006 FOR SWITCHING In most switching applications it is desirable to have a high ON-OFF-ratio. It is also desirable to be able to switch both positive and negative signal voltages over a range as large as


    OCR Scan     		SDF1001 2N4391 2N4393 2N4856 2N4861 FET U310 FET 2N4416 2N2606 2N5397-2N5396 2N5396-2N5397 2N5906 2N3687A 2n4117 jan PDF