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    2N4123 NPN Search Results

    2N4123 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    2N4123 NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N4124

    Abstract: 2N4123 2N4124G 2N4123RLRM
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Symbol 2N4123 2N4124 2N4123 2N4124 Emitter−Base Voltage VCEO VCBO


    Original     		2N4123, 2N4124 2N4123 2N4124 2N4123 2N4124G 2N4123RLRM PDF

    2N4124G

    Abstract: 2N4123 2N4123RLRM 2N4124
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Symbol 2N4123 2N4124 2N4123 2N4124 Emitter−Base Voltage


    Original     		2N4123, 2N4124 2N4123 2N4123/D 2N4124G 2N4123 2N4123RLRM 2N4124 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage 2N4123 2N4124 Collector−Base Voltage 2N4123 2N4124 Emitter−Base Voltage


    Original     		2N4123, 2N4124 2N4123 2N4123/D PDF

    2N4123

    Abstract: 2N4123RLRM 2N4124 2N4124G
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value VCEO 2N4123 2N4124 Collector−Base Voltage Vdc 30 25 VCBO 2N4123


    Original     		2N4123, 2N4124 2N4123 2N4123/D 2N4123 2N4123RLRM 2N4124 2N4124G PDF

    2n4123

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage


    Original     		2N4123/D 2N4123 2N4124 2N4124 226AA) 2N4123/D* PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4123 General Purpose Transistor. Collector-emitter Voltage: Vceo = 3. 1 of 1 Home Part Number: 2N4123 Online Store 2N4123 Diodes G eneral Purpo se Trans is t o r. C o llec t o r-em it t er Vo lt age: Vc eo


    Original     		2N4123 com/2n4123 2N4123 PDF

    2N4123 NPN

    Abstract: 2n4123 equivalent 1N916 2N4123
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


    Original     		2N4123 2N4123 NPN 2n4123 equivalent 1N916 2N4123 PDF

    2n4123 transistor

    Abstract: 1n916 fairchild
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


    Original     		2N4123 2n4123 transistor 1n916 fairchild PDF

    1N916

    Abstract: 2N4123 CBVK741B019 F63TNR PN2222N
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


    Original     		2N4123 1N916 2N4123 CBVK741B019 F63TNR PN2222N PDF

    2N4124 MOTOROLA

    Abstract: 2N4123 MOTOROLA 2N4124 2N4123
    Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage


    Original     		2N4123/D 2N4123 2N4124 2N4123 226AA) 2N4123/D* 2N4124 MOTOROLA 2N4123 MOTOROLA 2N4124 PDF

    2N4123

    Abstract: 2N4124 2N4123 MOTOROLA
    Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage


    Original     		2N4123/D 2N4123 2N4124 2N4123 226AA) 2N4123/D* 2N4124 2N4123 MOTOROLA PDF

    2N4124

    Abstract: 2n4123 2n4123 npn transistor
    Text: 2N4123 2N4124 NPN SILICON PLANAR EPITAXIAL TRANSISTOR ÌN /1 IG R C D GENERAL DESCRIPTION ; The 2N4123 and 2N4124 are NPN silic o n planar e p ita x ia l tra n s is to rs designed for general purpose sw itching and am plifier a p p licatio n s. 2N4123 and 2N4124 are


    OCR Scan     		2N4123 2N4124 2N4124 2N4125 2N4126. O-92A 310mW 2n4123 npn transistor PDF

    2N4123BU

    Abstract: No abstract text available
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


    Original     		2N4123 2N4123 O-92-3 2N4123BU 2N4123TA 2N4123TAR 2N4123TF 2N4123TFR PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


    Original     		2N4123 O-92-3 2N4123 PDF

    2N4123

    Abstract: 2N4124 2N4123RLRM 2N4123RLRMG 2N4124G
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value Unit VCEO 2N4123 2N4124 Collector−Base Voltage 30 25 VCBO


    Original     		2N4123, 2N4124 2N4123 2N4123/D 2N4123 2N4124 2N4123RLRM 2N4123RLRMG 2N4124G PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage VCBO 40


    Original     		2N4123 2N4124 2N4124 226AA) PDF

    2N4123

    Abstract: 2n4124 2n4123 npn transistor
    Text: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: V ceo * 2N4123:30V 2N4124:25V • Collector Dissipation: Pc max »625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic Collector-Base Voltage


    OCR Scan     		2N4123/4124 2N4123 2N4124 625mW 2N3904 2n4123 npn transistor PDF

    2n4124

    Abstract: 2N4123 MOTOROLA 2N4123
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol 2N4123 2N4124 25 Vdc 30 Vdc VCEO 30 Collector-Base Voltage VCBO 40 Emitter-Base Voltage


    OCR Scan     		2N4123 2N4124 2N4124 2N4123 MOTOROLA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123


    OCR Scan     		2N4123/4124 2N4123: 2N4124: 625mW 2N4124 2N3904 10OKHz PDF

    2N4123

    Abstract: 2N4124 2N4126 2N4125 2n4123 npn transistor
    Text: 2N 4123 PLANAR EPITAXIAL GENERAL DESCRIPTION : The 2N4123 and 2N4124 a re NPN s ilic o n p la n a r e p ita x ia l t r a n s i s t o r s designed fo r g e n e ra l purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re complementary to PNP 2N4125 and 2N4126.


    OCR Scan     		2N4123 2N4124 2N4125 2N4126. O-92A 2N4123) 2N4126 2n4123 npn transistor PDF

    2N4123

    Abstract: No abstract text available
    Text: 2N4123 2N4124 MAXIMUM RATINGS Rating Symbol 2N4123 2N 4124 C o lle ctor-E m itter Voltage v CEO 30 25 Vdc C ollector-Base Voltage v CBO 40 30 Vdc Em itter-Base V o ltage U n it v EBO 5.0 Vdc C o lle ctor C u rrent — C o ntinuous fC 200 m A dc Total Device D issipa tion a T ^ = 25°C


    OCR Scan     		2N4123 2N4124 O-226AA) PDF

    2N4123

    Abstract: 2N4124 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4125 2N4126 2n4123 pnp
    Text: 2N 4123 2N4124 NPN SILICO N IV IIC R O PLANAR EPITAX IA L E L -E G T R O IX H C S GENERAL DESCRIPTION ; The 2N4123 and 2N4124 a re NPN s ilic o n p la n ar e p ita x ia l tr a n s is to r s designed fo r g en e ral purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re


    OCR Scan     		2N4123 2N4124 2N4124 2N4125 2N4126. O-92A 2N4123 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4126 2n4123 pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: 45E » • SDTTESD 0017752 ft ■ T O S H TOSHIBA TRANSISTOR_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ SILICON NPN EPITAXIAL TYPE PCT PROCESS TOSHIBA 2N4123 ~3'-l $ (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES:


    OCR Scan     		2N4123 2N4125 100MHz PDF

    2n4123 npn transistor

    Abstract: 2N3904 2N4123
    Text: [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23. See 2N3904 for characteristics.


    Original     		2N4123 2N3904 2n4123 npn transistor 2N4123 PDF