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    2N4400 DATASHEET Search Results

    2N4400 DATASHEET Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    HS9-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
    HS1-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
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    2N4400 DATASHEET Price and Stock

    NTE Electronics Inc 2N4400

    Trans GP BJT NPN 40V 0.6A 3-Pin TO-92
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    2N4400 DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N4400 datasheet

    Abstract: 2N4400 CBVK741B019 F63TNR MMBT4400 PN2222N
    Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N4400 MMBT4400 2N4400 OT-23 2N4400 datasheet CBVK741B019 F63TNR MMBT4400 PN2222N PDF

    2N4400

    Abstract: CBVK741B019 F63TNR MMBT4400 PN2222N
    Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N4400 MMBT4400 2N4400 OT-23 CBVK741B019 F63TNR MMBT4400 PN2222N PDF

    2N4400TA

    Abstract: SOT23 MARK Y3 2N4400BU MARKING W3 SOT23 TRANSISTOR
    Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N4400 MMBT4400 2N4400 OT-23 2N4400H1TA 2N4400H1TF 2N4400RA 2N4400TA 2N4400TF SOT23 MARK Y3 2N4400BU MARKING W3 SOT23 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N4400 MMBT4400 2N4400 OT-23 PDF

    2N4400TFR

    Abstract: 2N4400BU 2N4400TA 2N4400-D81Z 2N4400
    Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N4400 MMBT4400 2N4400 OT-23 O-92-3 2N4400BU 2N4400TA 2N4400TAR 2N4400TFR 2N4400-D81Z PDF

    2N4400

    Abstract: MMBT4400
    Text: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N4400 MMBT4400 2N4400 OT-23 MMBT4400 PDF

    Untitled

    Abstract: No abstract text available
    Text: EE 330 Spring 2014 Laboratory 8: Semiconductor Parameter Measurements Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second objective is to


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    2N4400 Q4015L5 Q4010LS2 PDF

    Q4010LS2

    Abstract: BJT amplifiers BJT IC Vce red laser pointer bipolar junction transistor Q4015L5 laser diode mosfet triggering circuit MC14007 Photo resistor bjt ic operational amplifier
    Text: EE 330 Laboratory 9 Semiconductor Parameter Measurement and Thyristor Applications Spring 2011 Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second


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    2N4400 Q4015L5 Q4010LS2 XE2410 BJT amplifiers BJT IC Vce red laser pointer bipolar junction transistor laser diode mosfet triggering circuit MC14007 Photo resistor bjt ic operational amplifier PDF

    Rs 1006b

    Abstract: No abstract text available
    Text: TC www.vishay.com Vishay Dale Through Hole Transformers Converter FEATURES • Designed especially for low-power solid state circuits • Designed for mounting on printed circuit boards • Miniature size for minimum space • High conversion efficiency from DC input to filtered DC


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    2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Rs 1006b PDF

    Untitled

    Abstract: No abstract text available
    Text: TC www.vishay.com Vishay Dale Through Hole Transformers Converter FEATURES • Designed especially for low-power solid state circuits • Designed for mounting on printed circuit boards • Miniature size for minimum space • High conversion efficiency from DC input to filtered DC


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    2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    alternative for LM317

    Abstract: TMMH-124-01-F-D-RA-ES hd-sdi pcb layout 2N4400 2N4402 49R9 GO1525 GS1524 GS1528 GS1560A
    Text: GS1560A A Guide to Designing with the HD-LINX II Dual Rate Serial-to-Parallel Converter EB1560 rev 3 Reference Design 29352 - 1 February 2005 1 of 25 GS1560A Reference Design Contents 1. Overview .3


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    GS1560A EB1560 GS1560A alternative for LM317 TMMH-124-01-F-D-RA-ES hd-sdi pcb layout 2N4400 2N4402 49R9 GO1525 GS1524 GS1528 PDF

    DG211BDY-E3

    Abstract: DG211 DG211B DG211BDJ DG211BDY DG212 DG212B DG212BDJ DG212BDY dg212bdq
    Text: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon


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    DG211B, DG212B DG212B DG211, DG212. DG211B 11-Mar-11 DG211BDY-E3 DG211 DG211BDJ DG211BDY DG212 DG212BDJ DG212BDY dg212bdq PDF

    DG308A

    Abstract: DG308B DG308BDJ DG308BDY DG309 DG309B DG309BDJ
    Text: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon


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    DG308B, DG309B DG309B DG308A, DG309. DG308B 11-Mar-11 DG308A DG308BDJ DG308BDY DG309 DG309BDJ PDF

    DG202BDJ-E3

    Abstract: DG202BDY-T1-E3 3DG201B
    Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon


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    DG201B, DG202B DG202B DG201A, DG202. DG201B 11-Mar-11 DG202BDJ-E3 DG202BDY-T1-E3 3DG201B PDF

    V10090

    Abstract: DG212BDY-T1
    Text: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon


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    DG211B, DG212B DG212B DG211, DG212. DG211B 11-Mar-11 V10090 DG212BDY-T1 PDF

    DG201A

    Abstract: DG201B DG201BAK DG201BDJ DG201BDJ-E3 DG202 DG202B DG202BAK DG202BDJ
    Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon


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    DG201B, DG202B DG202B DG201A, DG202. DG201B 11-Mar-11 DG201A DG201BAK DG201BDJ DG201BDJ-E3 DG202 DG202BAK DG202BDJ PDF

    Untitled

    Abstract: No abstract text available
    Text: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon


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    DG211B, DG212B DG212B DG211, DG212. DG211B 2002/95/EC. 2002/95/EC PDF

    Untitled

    Abstract: No abstract text available
    Text: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon


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    DG308B, DG309B DG309B DG308A, DG309. DG308B 11-Mar-11 PDF

    DG308

    Abstract: DG309B
    Text: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon


    Original
    DG308B, DG309B DG309B DG308A, DG309. DG308B 2011/65/EU 2002/95/EC. DG308 PDF

    Untitled

    Abstract: No abstract text available
    Text: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon


    Original
    DG308B, DG309B DG309B DG308A, DG309. DG308B 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: DG444, DG445 Vishay Siliconix Quad SPST CMOS Analog Switches • Audio switching FEATURES • Low on-resistance: 50  • Battery powered systems • Low leakage: 80 pA • Data acquisition • Low power consumption: 22 nW • Sample-and-hold circuits • Fast switching action - tON: 120 ns


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    DG444, DG445 DG211, DG212 DG445 11-Mar-11 PDF

    DG445DY

    Abstract: No abstract text available
    Text: DG444, DG445 Vishay Siliconix Quad SPST CMOS Analog Switches • Audio switching FEATURES • Low on-resistance: 50  • Battery powered systems • Low leakage: 80 pA • Data acquisition • Low power consumption: 22 nW • Sample-and-hold circuits • Fast switching action - tON: 120 ns


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    DG444, DG445 DG211, DG212 DG445 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. DG445DY PDF

    2N4401 NPN Switching Transistor

    Abstract: MPSL01 2N4400 2N4401 2N4953 MPS6531 PN2222 PN2222A
    Text: This NPN Transistors Material IT In □ NPN General Purpose Amplifiers and Switches continued t-1 b-1 ÜJ a Device No. Copyrighted CBO CEO (V) (V) (V) Min Min Min TO-92 (92) 140 120 TO-92 (92) 60 Case Style a □ jr a jr cr MPSL01 2N4400 UJ CE(SAT) EBO (nA) @


    OCR Scan
    MPSL01 2N4400 2N4401 2N4953 MPS6531 PN2222 PN2222A 2N4401 NPN Switching Transistor MPSL01 2N4400 2N4401 2N4953 MPS6531 PN2222 PN2222A PDF

    national PN2222A

    Abstract: No abstract text available
    Text: NPN Transistors NPN General Purpose Amplifiers and Switches V Device No. Case Style CBO V C EO V V Min (V) Min (V) Min Max 10 EBO MPSL01 TO-92 (92) 140 120 6 2N4400 TO-92 (92) 60 40 6 2N4401 TO-92 (92) 60 40 *CBO w (V> h FE @ 'c ft V C E Min Max (mA) 00


    OCR Scan
    MPSL01 2N4400 2N4953 MPS6531 PN2222 PN2222A national PN2222A PDF