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    2N4410 TRANSISTOR Search Results

    2N4410 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N4410 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4410 MOTOROLA

    Abstract: 2N4410 motorola 1N914 diode datasheet 1N914 maximum current rating of diodes
    Text: MOTOROLA Order this document by 2N4410/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO


    Original     		PDF 2N4410/D 2N4410 226AA) 2N4410/D* 2N4410 MOTOROLA 2N4410 motorola 1N914 diode datasheet 1N914 maximum current rating of diodes

    2N4410

    Abstract: 2N4410 Transistor Transistor marking code S
    Text: 2N4410 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4410 is a small signal NPN silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N4410 2N4410 20MHz 18-October 2N4410 Transistor Transistor marking code S

    2N4410

    Abstract: No abstract text available
    Text: ON Semiconductort Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc


    Original     		PDF 2N4410 226AA) 2N4410

    2N4410

    Abstract: No abstract text available
    Text: ON Semiconductort Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 120 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc


    Original     		PDF 2N4410 O-226AA) r14525 2N4410/D 2N4410

    2N4410

    Abstract: 1N914 transistor 2N4410
    Text: ON Semiconductort Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc


    Original     		PDF 2N4410 226AA) r14525 2N4410/D 2N4410 1N914 transistor 2N4410

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE


    Original     		PDF BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961

    2N4410 Transistor

    Abstract: 2N4410 equivalent DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 120 Vdc Emitter – Base Voltage


    Original     		PDF 2N4410 226AA) 2N4410 Transistor 2N4410 equivalent DO204AA

    Untitled

    Abstract: No abstract text available
    Text: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N4410 2N5551

    2N4409

    Abstract: 2N4410 2N4410 MOTOROLA 2N5550
    Text: MOTORCLA SC XSTRS/R 15E D I F b3b?5S4 00057=10 3 | t - w -z i 2N4409 2N4410 MAXIMUM RATINGS Symbol 2N4409 2N4410 U nit Collector-Emitter Voltage VCEO 50 80 Vdc Collector-Base Voltage VcBO 80 120 Vdc Emitter-Base Voltage Rating Ve b o 5.0 Vdc Collector Current — Continuous


    OCR Scan     		PDF b3b75S4 2N4409 2N4410 2N4410 MOTOROLA 2N5550

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N4410/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistor NPN Silicon 2 N 4 4 10 COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage v CEO 80 Vdc C o lle c to r-B a s e Voltage v CBO


    OCR Scan     		PDF 2N4410/D

    2N4409

    Abstract: a5t4409
    Text: TYPES 2N4409, 2N4410, A5T4409, A5T4410 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 7 4 , M A R C H 1 9 7 3 S ILE C T t T R A N S IS T O R S Ï FOR M E D IU M -C U R R E N T A M P L IF IE R APPLICATIO N S • High-Voltage Indicator and Display Control


    OCR Scan     		PDF 2N4409, 2N4410, A5T4409, A5T4410 100-mil 2N4409 a5t4409

    2N4410

    Abstract: No abstract text available
    Text: 2N4410 MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V o lta g e VCEO 80 V dc C o lle c to r-B a s e V o lta g e v CBO 120 V dc E m itte r-B a s e V o lta g e v EBO 5.0 V dc C o lle c to r C u rre n t — C o n tin u o u s ¡c 250 m Adc


    OCR Scan     		PDF 2N4410 O-226AA) 2N4410

    2N3903

    Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 225mA) 2N4401

    2N4410 MOTOROLA

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value v CEO 80 Vdc C o lle c to r-B a s e Voltage v CBO 120 V dc E m itte r-B a s e Voltage C o lle c to r-E m itte r Voltage Unit v EBO


    OCR Scan     		PDF 2N4410 2N4410 MOTOROLA

    BC118

    Abstract: BC537 BC538 FAIRCHILD TO-106 2N2484 BC125 BC537-10 BC537-6 fairchild semiconductors BC538-10
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N General Purpose Am plifier and Sw itching Transistors P la s tic P a c k a g e T O 92, T O 105, T O 106 REFEREN CE T A B L E S e e a ls o lo w level and hig h v o ltag e s e ctio n .


    OCR Scan     		PDF BC118 35273E BC125 35274C BC537 5275A BC537-6 3S276X BC537-10 35277H BC538 FAIRCHILD TO-106 2N2484 fairchild semiconductors BC538-10

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n5133 bc209

    Abstract: 2N5133 BC208C BC209 BC528 noise BC209B BC209C 2N4033 N82C55A2 BC538-16
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqeO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) NPN PNP 1 MPSA06 2 BC538-10 BC528-10 3 MPSA56 @ 'c VCE(aat) V @ lC Max mA mA M in/M ax C0 b


    OCR Scan     		PDF MPSA06 MPSA56 BC538-10 BC528-10 2N4033 BC538-16 BC528-16 BC538-25 BC528-25 2N4410 2n5133 bc209 2N5133 BC208C BC209 BC528 noise BC209B BC209C 2N4033 N82C55A2

    2N4424

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Electrical C haracteristics (Ta=25 'C, Unless O therw ise Specified) Maximum Ratings Type CBO No. (V) Min ^CEO i ^EBO (V) ! (V) Min Min Po leso ^CB 'CES <W) (HA) Max (V ) (MA) 0.4 20 @Tc=25°c 0.625 2N4294 0.2 hpE


    OCR Scan     		PDF 2N4294 O-92-1 2N4954 2N4966 2N4967 2N4969 2N4970 2N4424

    2N4286

    Abstract: 2N4292 2N3903 2N3904 2N4123 2N4124 2N4287 2N4293 2N4294 2N4295
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBi (V) Min ^CEC (V) Min 60 45 2N3903 60 2N3904 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^EBO Pd (V) (W) (A) Min @Tc=25 °c 6 40 6 kwj ^CB (MA) @<V) Max 0.625 0.2 (JA)


    OCR Scan     		PDF 2N3903 2N3904 2N4123 2N4124 2N4286 2N4287 2N4292 2N4293 2N4294 2N4295 2N4286 2N3903 2N3904 2N4123 2N4124 2N4287 2N4294 2N4295

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (VI Min 2N3903 60 Vceo (V) Min ^ebo w Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) Tc=25°< 0.625 " fé Max Min Max 0.2 *0.05 30 0.625 0.2 *0.05 30 0.625


    OCR Scan     		PDF 2N3903 2N4951 2N4946 2N4424 2N4952 2N4410 2N4409

    2N3638

    Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
    Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW


    OCR Scan     		PDF 2N4969 2N3641 2N4436 EN697 MPSA10 MPSA20 2N3904 2N3903 EN3903 MPS6531 2N3638 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855

    2N5129

    Abstract: 2n4141 TP5059 2N3904 2N3974 2N3976 2N4123 2N4124 2N4140 2N4286
    Text: S P R A G U E / SE MI CO ND GROUP 8514019 SPRAGUE. =13 D • Ô513ÔS0 D0035Ö7 5 ■ S E M IC O N D S /IC S 93D 03587 P . T " " PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain


    OCR Scan     		PDF D0035Ã 2N3904 2N3974 2N3976 TP4013 TP5058 TP5059 2N5088 2N5089 TP5127 2N5129 2n4141 2N4123 2N4124 2N4140 2N4286

    Allegro 40e

    Abstract: 2N5129 2N3904 2N3974 2N3976 2N4123 2N4124 2N4140 2N4141 2N4286
    Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 19 S P R A G U E . ^3 D • 05GM33Ö 0003507 SEMICONDS / IC S 4 ■ ALGR 0 3 5 8 7 2>\ 93D ~T^ PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device


    OCR Scan     		PDF 0SG433Ã 2N3904 2N3974 2N3976 TP4013 2N4970 TP5058 TP5059 2N5088 2N5089 Allegro 40e 2N5129 2N4123 2N4124 2N4140 2N4141 2N4286

    BC118

    Abstract: transistor BC118 BFR37 SGS 2n2388 2N706 BC125 BC537 fairchild to-106 fairchild semiconductors BC537-10
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N General Purpose Am plifier and Sw itching Transistors P la stic P a ck a g e TO 92, T O 105, TO 106 REFEREN CE T A B L E S e e a ls o lo w level and hig h v o ltag e s e ctio n .


    OCR Scan     		PDF BC118 35273E BC125 35274C BC537 5275A BC537-6 3S276X BC537-10 35277H transistor BC118 BFR37 SGS 2n2388 2N706 fairchild to-106 fairchild semiconductors