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    2N4922 MOTOROLA Search Results

    2N4922 MOTOROLA Result Highlights (2)

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    2N4922 MOTOROLA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N4923

    Abstract: 2N4922
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium -Pow er Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and am plifier applications. These high-performance plastic devices feature: • • Low Saturation Voltage — VcE sat = 0-6 Vdc (Max) @ lc = 1-0 Amp


    OCR Scan     		2N4918 2N4919 2N4920 2N4923 2N4922 PDF

    2N4923

    Abstract: transistor 2n
    Text: MOTOROLA Order this document by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N 4923* M edium -Pow er Plastic NPN Silicon Transistors . . . d e sig ne d fo r d riv e r c irc u its , s w itc h in g , and a m p lifie r a p p lic a tio n s . These high-perform ance plastic devices feature:


    OCR Scan     		2N4921/D 2N4921 2N4918, 2N4919, 2N4920 O-225AA 2N4923 transistor 2n PDF

    2N4923

    Abstract: 2N4923 MOTOROLA 2N4921
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N 492i/D 2N 4921 thru 2N 4 9 23 * M edium -P ow er P lastic NPN Silicon Transistors . . . designed for driver circuits, switching, and am plifier applications. These high-performance plastic devices feature:


    OCR Scan     		492i/D 2N4918, 2N4919, 2N4920 2N4921/D 2N4923 2N4923 MOTOROLA 2N4921 PDF

    2N4923 MOTOROLA

    Abstract: 2n4923r 2N4923 to.225aa 2N4921 12 volt-30 amp power diode 2N4921-D 2N4922 MOTOROLA 2N4918 2N4919
    Text: MOTOROLA Order this document by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature:


    Original     		2N4921/D 2N4921 2N4923* 2N4918, 2N4919, 2N4920 2N4921/D* 2N4923 MOTOROLA 2n4923r 2N4923 to.225aa 2N4921 12 volt-30 amp power diode 2N4921-D 2N4922 MOTOROLA 2N4918 2N4919 PDF

    B0139

    Abstract: b0135 bd140 cross reference TRANSISTOR B0135 NPN TRANSISTOR NPN B0135 BD232 motorola power transistor to-126 BD167 NPN/B0139-16 BD169
    Text: MOTOROLA SC XSTRS/R F 4fc>E D • b3b?254 OQT B H D ' l 0 «MOTb T ~ $2> ~ 0 3 TABLE 8 - PLASTIC TO-225 Type (Formerly TO-126 Type) STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE yggw STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 77-07 (TO-225AA) Resistive Switching


    OCR Scan     		O-225 O-126 O-225AA) MJE3439 MJE341 MJE344 2N5655 BD157 BD158 BD232 B0139 b0135 bd140 cross reference TRANSISTOR B0135 NPN TRANSISTOR NPN B0135 motorola power transistor to-126 BD167 NPN/B0139-16 BD169 PDF

    37931

    Abstract: mje520 MJE370 MJE520 MOTOROLA 2N4920 2N4923 mje712 MJE720
    Text: M O T O R O L A SC -CDIODES/OPTOJ 6367255 34 M O T O R OL A SC DE | ta3b7SSS 34 c D IO D E S /O P TO 37931 SILICON POWER TRANSISTOR DICE (continued) 2C4923 DIE NO. — NPN LINE SOURCE — PL500.E52 NPN PNP dl fj|) T ~ 3 3 'O J 2C4920 / / DIE NO. — PNP


    OCR Scan     		PL500 2C4923 2C4920 2N4921 2N4922 2N4923 MJE520 MJE720 MJE721 37931 MJE370 MJE520 MOTOROLA 2N4920 mje712 PDF

    BD232

    Abstract: BD170 2N4918 MOTOROLA hie bd135 mje520 MJe340 350 MJE13003A B0166 B0180 2N4923 MOTOROLA
    Text: POWER TRANSISTORS — BIPOLAR PLASTIC TO-126 Package CASE 77-04 PLASTIC STYLE 1 : PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. 2. 3. BASE COLLECTOR EMITTER R esistive Sw itching lcCont V cEO sus Am ps Max Volts Min 0.3 350 0.5 1 1.5 2 NPN ^FE PNP


    OCR Scan     		O-126 MJE3439 BD157 BD158 BD232 MJE340S MJE340 MJE350 BD159 2N4921 BD170 2N4918 MOTOROLA hie bd135 mje520 MJe340 350 MJE13003A B0166 B0180 2N4923 MOTOROLA PDF

    ba 4918

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium -Pow er Plastic PNP Silicon Ttansistors . . . designed for driver circuits, switching, and am plifier applications. These high-performance plastic devices feature: • • • • . Low Saturation Voltage — VCE sat = 0-6 Vdc (Max) @ lc = 1 0 Amp


    OCR Scan     		2N4921, 2N4922, 2N4923 ba 4918 PDF

    N4918

    Abstract: 2N4920 2N4918
    Text: MOTOROLA Order this document by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2 N 49 18 thru 2N 4920* M edium -Pow er P lastic PNP Silicon Transistors . . . d e sig ne d fo r d riv e r c irc u its , s w itc h in g , and a m p lifie r a p p lic a tio n s . These high-perform ance plastic devices feature:


    OCR Scan     		2N4918/D 2N4922, 2N4923 O-225AA N4918 2N4920 2N4918 PDF

    2N4918

    Abstract: 2N4918 MOTOROLA transistor m 1104
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N 49ia/D 2N 49 18 thru 2 N 49 2 0* M edium -P ow er P lastic PNP Silicon Transistors . . . designed for driver circuits, switching, and am plifier applications. These high-performance plastic devices feature:


    OCR Scan     		49ia/D 2N4921, 2N4922, 2N4923 2N4918/D 2N4918 2N4918 MOTOROLA transistor m 1104 PDF

    2SC105

    Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp


    Original     		2N4918, 2N4919, 2N4920 2N4921 2N4923* TIP73B TIP74 TIP74A TIP74B TIP75 2SC105 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent PDF

    2n4920R

    Abstract: 2N4918 MOTOROLA 2N4919 2N4922 MOTOROLA 2N4918 2N4920 2N4921 2N4922 2N4923
    Text: MOTOROLA Order this document by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 thru 2N4920* Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature:


    Original     		2N4918/D 2N4918 2N4920* 2N4921, 2N4922, 2N4923 2N4918/D* 2n4920R 2N4918 MOTOROLA 2N4919 2N4922 MOTOROLA 2N4918 2N4920 2N4921 2N4922 2N4923 PDF

    2N6124

    Abstract: 334 bdw93c 2n4920R BU108 2SA1046 2N4920 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2SA981 equivalent BU806 Complement BDX54
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4918 thru 2N4920* Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp


    Original     		2N4921, 2N4922, 2N4923 2N4918 2N4920* TIP73B TIP74 TIP74A TIP74B TIP75 2N6124 334 bdw93c 2n4920R BU108 2SA1046 2N4920 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2SA981 equivalent BU806 Complement BDX54 PDF

    2N5483

    Abstract: BD173 diode 2U 66 BD171 MJE30 MJE2360T
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE »T ON) Min (Hz) Max k)N Max (A) (8) •cBO r (CE)Mt Max (Ohmt) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . .


    Original     		BD171 KT821V1 DTL3512 BD172 MJE341 2SA843 MJE341K BD173 2N5483 diode 2U 66 MJE30 MJE2360T PDF

    BU108

    Abstract: BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •


    Original     		TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100 PDF

    tip122 tip127 audio amp

    Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc


    Original     		TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 220AB tip122 tip127 audio amp TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS PDF

    MJL21194 equivalent

    Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.


    Original     		MJL21193 MJL21194 MJL21193* MJL21194* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJL21194 equivalent MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications PDF

    BU108

    Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		BD438 BD442. BD437 BD441 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100 PDF

    ST T4 3580

    Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc


    Original     		MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714 PDF

    bu806 REPLACEMENT

    Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


    Original     		220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326 PDF

    MJE15020

    Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment


    Original     		MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 PDF

    pin configuration NPN transistor BD679

    Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


    Original     		BD675, BD676, BD675 BD675A BD677 BD677A BD679 BD679A BD681* TIP73B pin configuration NPN transistor BD679 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943 PDF

    2N5686 motorola

    Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.


    Original     		2N5684 2N5685 2N5686* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5686 motorola 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 MJ1000 NSP2100 PDF

    BU108

    Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS


    Original     		2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100 PDF