2N5088
Abstract: No abstract text available
Text: 2N5088 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5088 Availability Online Store
|
Original
|
2N5088
2N5088
STV3208
LM3909N
|
PDF
|
2N5088 equivalent
Abstract: 2N5088 2N5089
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage
|
Original
|
ISO/TS16949
2N5088
2N5089
C-120
2N5088 equivalent
2N5088
2N5089
|
PDF
|
2N5088 equivalent
Abstract: 2N5088 2N5089
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage
|
Original
|
2N5088
2N5089
C-120
2N5088 equivalent
2N5088
2N5089
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. 1 EBC ABSOLUTE MAXIMUM RATINGS for
|
OCR Scan
|
2N5086
2N5088
2N5087
2N5089
T0-92A
2N5086,
2N5088;
|
PDF
|
2N5081
Abstract: transistor 2N5086 2N5086 2n508 2n5088 transistor 2N5087 2N5088 2N5089
Text: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS I CASE TO-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. IBC (PNP) ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
2N5086
2N5087
2N5088
2N5089
2N5086,
2N5088;
T0-92A
2N5086
2N5081
transistor 2N5086
2n508
2n5088 transistor
2N5087
2N5089
|
PDF
|
2N5089
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage
|
Original
|
2N5088
2N5089
C-120
2N5089
|
PDF
|
2N5089 equivalent
Abstract: 2n5088 alternative transistor 2n5088 equivalent 0/2N5089 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5088 2N5089 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage VCBO 35 30 Vdc
|
Original
|
2N5088
2N5089
2N5089
226AA)
2N5089 equivalent
2n5088 alternative
transistor 2n5088 equivalent
0/2N5089 equivalent
|
PDF
|
2n508
Abstract: 2N5086 2N5088 2N5089 2N5087 2N5089 power
Text: 2N5086 2N5088 2N5087 2N 5089 PHP . NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS -%. -C•-'■!■- -% Jy , I CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN ÂP LOW NOISE PREAMPLIFIER CIRCUITS.
|
OCR Scan
|
2N5086
2N5087
2N5088
2N5089
2n5086,
2n508?
2n5088;
O-92A
2f5086
2n508
2N5089
2N5089 power
|
PDF
|
2N5088BU
Abstract: No abstract text available
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
|
Original
|
2N5088
MMBT5088
2N5089
MMBT5089
2N5089
OT-23
2N5088BU
|
PDF
|
2n5089 spice
Abstract: 2N5088 Fairchild
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
|
Original
|
2N5088
MMBT5088
2N5089
MMBT5089
2N5089
OT-23
2n5089 spice
2N5088 Fairchild
|
PDF
|
2N5088
Abstract: transistor 2N5088 2N5088 equivalent 2n5088 transistor 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
|
Original
|
2N5088
MMBT5088
2N5089
MMBT5089
2N5088
2N5089
MMBT5088
OT-23
transistor 2N5088
2N5088 equivalent
2n5088 transistor
CBVK741B019
F63TNR
MMBT5089
PN2222N
|
PDF
|
1r sot-23
Abstract: No abstract text available
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1mA to 50 mA.
|
Original
|
2N5088
MMBT5088
2N5089
MMBT5089
2N5089
OT-23
1r sot-23
|
PDF
|
TIC 1160
Abstract: 2N5088 equivalent 2n5088 transistor 2N5088 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
|
Original
|
2N5088
MMBT5088
2N5089
MMBT5089
2N5088
2N5089
MMBT5088
OT-23
TIC 1160
2N5088 equivalent
2n5088 transistor
CBVK741B019
F63TNR
MMBT5089
PN2222N
|
PDF
|
2N5089
Abstract: 2N5088 equivalent 2n5088 transistor c 5088 2N5089 power 2N5088 MMBT5088 MMBT5089 4973P 2N5088 Fairchild
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
|
Original
|
2N5088
MMBT5088
2N5089
MMBT5089
2N5088
2N5089
MMBT5088
OT-23
2N5088 equivalent
2n5088 transistor
c 5088
2N5089 power
MMBT5089
4973P
2N5088 Fairchild
|
PDF
|
|
|
2N5088 Cross Reference
Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
|
Original
|
2N5088
MMBT5088
2N5089
MMBT5089
2N5089
OT-23
2N5088 Cross Reference
2N5088 power
50-kV
2N5089 fairchild
2n5088 application note
2N5088 Fairchild
|
PDF
|
2N508B
Abstract: 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR 2N5088 2N5089 MMBT5088 MMBT5089 T092 LS5911
Text: 2N5088 / MMBT5088 12N50891 MMBT5089 & D iscrete P O W ER & S ig n a l Techno logies National S e m i c o n d u c t o r " MMBT5088 MMBT5089 2N5088 2N5089 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1pA to 50 mA.
|
OCR Scan
|
2N5088
2N5089
MMBT5088
MMBT5089
2N5089
b5D1130
2N508B
2N5088 national
2N5089 NATIONAL SEMICONDUCTOR
MMBT5089
T092
LS5911
|
PDF
|
2n 5088 transistor
Abstract: SOT-23 CEB
Text: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier
|
Original
|
2N5088/89
MMBT5088/89
MMBT5088
MMBT5089
OT-23
O-92/SOT-23,
MIL-STD-202,
MMBT5089
2n 5088 transistor
SOT-23 CEB
|
PDF
|
5089
Abstract: N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 MMBT5088 MMBT5089
Text: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier
|
OCR Scan
|
2N5088/5089
MMBT5088/5089
MMBT5088
MMBT5089
O-92/SOT-23,
MIL-STD-202,
OT-23
MMBT5089
5089
N5088
2n 5088 transistor
c 5088
DS21
603 marking
2N5088
2N5089
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS / u T E M ir I POWER SEMICONDUCTOR J Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplitier
|
OCR Scan
|
2N5088/5089
MMBT5088/5089
MMBT5088
MMBT5089
OT-23
O-92/SOT-23,
MIL-STD-202,
MMBT5089
|
PDF
|
Irf640 irf9540
Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF
|
OCR Scan
|
2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
Irf640 irf9540
IRFR220TF
IRF510 mosfet irf640
451 MOSFET
KSP44
IRFR9120-TF
STR 456
2n3904 2n3906
KST2222ATF
IRFR120TF
|
PDF
|
transistor 2n5088
Abstract: 2N5088 equivalent 2n5088 transistor ic str 6707 STR s 6707 2N5087 2N5088 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistor
|
Original
|
M3D186
2N5088
2N5087.
MAM279
SCA55
117047/00/03/pp8
transistor 2n5088
2N5088 equivalent
2n5088 transistor
ic str 6707
STR s 6707
2N5087
2N5088
BP317
|
PDF
|
PN930
Abstract: 2N5088
Text: SEMiCONDUCTQR PN930 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1pi to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Màximum RStinQS
|
OCR Scan
|
PN930
2N5088
PN930
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR • 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum RatinQS
|
OCR Scan
|
2N5961
2N5088
al60u
|
PDF
|
2N5088
Abstract: 2N5088G 2N5089 2N5089L-T92-B
Text: UNISONIC TECHNOLOGIES CO., LTD 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A ~ 50mA. 1 TO-92
|
Original
|
2N5088/2N5089
2N5088L-T92-B
2N5088G-T92-B
2N5088L-T92-K
2N5088G-T92-K
2N5088L-T92-R
2N5088G-T92-R
2N5089L-T92-B
2N5089G-T92-B
2N5089L-T92-K
2N5088
2N5088G
2N5089
|
PDF
|
