2N5401 APPLICATION Search Results

2N5401 APPLICATION Result Highlights (5)

Part	Manufacturer	Description
CA3079	Rochester Electronics LLC	CA3079 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications
CA3059	Rochester Electronics LLC	CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications
CA3059-G	Rochester Electronics LLC	CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications
TCM3105NL	Rochester Electronics LLC	TCM3105NL - FSK Modem, PDIP16
AM79865JC	Rochester Electronics LLC	AM79865 -Physical Data Transmitter

2N5401 APPLICATION Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5550 EBC Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400 Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.	OCR Scan	2n5400, 2n5401 2n5550, 2n5551 T0-92A 2n5400 2n555q 2n5551 600mA 2N5550 EBC 2N5401 2N5400 5551 2N5550 T092A N5400	PDF
2N5401 Abstract: transistor 2N5401 1N914 2N5400 Text: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO	Original	2N5401* 2N5400 2N5401 226AA) r14525 2N5401/D 2N5401 transistor 2N5401 1N914 2N5400	PDF
2N5401 fairchild Abstract: No abstract text available Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*	Original	2N5401 MMBT5401 2N5401 OT-23 2N5401 fairchild	PDF
2N5401 Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103 Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5401 MMBT5401 2N5401 OT-23 CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103	PDF
2N5401 Abstract: 2N54XX transistor 2N5401 1N914 2N5400 2N5401RL1 2N5401RLRA 2N5401RLRAG 2N5401RLRM 2N5401ZL1 Text: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage	Original	2N5401 2N5400 2N5401/D 2N5401 2N54XX transistor 2N5401 1N914 2N5401RL1 2N5401RLRA 2N5401RLRAG 2N5401RLRM 2N5401ZL1	PDF
2N5401 Abstract: 2N5400 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage	Original	2N5400/D 2N5400 2N5401* 2N5400 2N5401 2N5400/D* 2N5401 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA	PDF
diode 2N5401 Abstract: 2N5400 2N5401 transistor 2N5401 1N914 2N5400G 2N5400RLRP 2N5400RLRPG 2N5401G 2N5401RL1 Text: 2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage	Original	2N5400, 2N5401 2N5400 2N5400/D diode 2N5401 2N5401 transistor 2N5401 1N914 2N5400G 2N5400RLRP 2N5400RLRPG 2N5401G 2N5401RL1	PDF
str g 5551 Abstract: str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551 Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor 2N5401	OCR Scan	2N5401 2N5401 115002/00/03/pp8 str g 5551 str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551	PDF
2N5401 SOT-23 Abstract: 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401 Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5401 MMBT5401 2N5401 OT-23 2N5401 SOT-23 2N5401 fairchild transistor 2N5401 MMBT5401	PDF
2N5401 fairchild Abstract: 2N5401 SOT-23 Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*	Original	2N5401 MMBT5401 2N5401 OT-23 OT-23 2N5401 fairchild 2N5401 SOT-23	PDF
transistor 2N5401 Abstract: 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 08 2004 Oct 28 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA	Original	M3D186 2N5401 2N5551. MAM280 SCA76 R75/04/pp6 transistor 2N5401 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401	PDF
2N5401 Abstract: 2N5401 motorola 2N5400 2N5401 TO-39 Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA 2N5400 2N5401* Amplifier Transistors PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage	Original	2N5400/D 2N5400 2N5401* 2N5401 226AA) 2N5400/D* 2N5401 motorola 2N5401 TO-39	PDF
2n5401y Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5401 MMBT5401 2N5401 OT-23 2N5401YBU 2N5401RM 2N5401CH1TA 2n5401y 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 5401 GM	PDF
2N5401 fairchild Abstract: transistor 2N5401 2N5401 2n5401 transistor Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor	Original	2N5401 625mW 2N5401 fairchild transistor 2N5401 2N5401 2n5401 transistor	PDF

2N5401 Abstract: transistor 2N5401 diodes inc 2N5551 2N5551 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1997 May 22 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA	Original	M3D186 2N5401 2N5551. MAM280 SCA63 115002/00/03/pp8 2N5401 transistor 2N5401 diodes inc 2N5551 2N5551 BP317	PDF
transistor equivalent book 2N5401 Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage	Original	2N5400 2N5401* 2N5401 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor equivalent book 2N5401 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551	PDF
mark 2L SOT-23 Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6 Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5401 MMBT5401 2N5401 OT-23 2N5401RA 2N5401BU 2N5401RM 2N5401TF mark 2L SOT-23 MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6	PDF
mark 2L SOT-23 Abstract: 2N5401 SOT-23 2N5401 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5401 MMBT5401 2N5401 OT-23 mark 2L SOT-23 2N5401 SOT-23 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor	PDF
transistor 5401 Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor	Original	2N5401 625mW 2N5401 O-92-3 2N5401BU 2N5401CTA 2N5401NLBU 2N5401TA 2N5401TAR transistor 5401 2N5401 fairchild 5401 transistor transistor 2N 5401 Transistor B C 458 2n5401 application	PDF
sot23 t04 Abstract: mark t04 sot 2n5401 sot 23 Text: 2N5401 I MMBT5401 D iscrete POW ER & S ig n a l Technologies tß National Semiconductor" 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.	OCR Scan	2N5401 MMBT5401 2N5401 OT-23 bS01130 00407Cn LSD113D sot23 t04 mark t04 sot 2n5401 sot 23	PDF
LSC 132 Abstract: 2N5401 MMBT5401 357t Text: 2N5401 I MMBT5401 <S> D is c r e te P O W E R & S i g n a l T e c h n o lo g ie s _ National Semiconductor"' 2N5401 MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.	OCR Scan	SQ1130 DD4D711 LSC 132 2N5401 MMBT5401 357t	PDF
Untitled Abstract: No abstract text available Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES Collector-Emitter Voltage: VCEO=-150V Collector Dissipation: Pc max =625mW High current gain 1 APPLICATIONS Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE	Original	2N5401 -150V 625mW QW-R201-001	PDF
2N5401 Abstract: 2n5401 application Text: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ᴌLow Leakage Current. : ICBO=-50nA Max. @VCB=-120V	Original	2N5401 -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401 2n5401 application	PDF
Untitled Abstract: No abstract text available Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES Collector-Emitter Voltage: VCEO=-150V Collector Dissipation: Pc max =625mW High current gain 1 APPLICATIONS Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE	Original	2N5401 -150V 625mW	PDF

2N5401 APPLICATION Search Results

2N5401 APPLICATION Result Highlights (5)

2N5401 APPLICATION Datasheets Context Search

2N5550 EBC

2N5401

2N5401 fairchild

2N5401

2N5401

2N5401

diode 2N5401

str g 5551

2N5401 SOT-23

2N5401 fairchild

transistor 2N5401

2N5401

2n5401y

2N5401 fairchild

2N5401

transistor equivalent book 2N5401

mark 2L SOT-23

mark 2L SOT-23

transistor 5401

sot23 t04

LSC 132

Untitled

2N5401

Untitled