2N5401
Abstract: 2N5400 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA
Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage
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2N5400/D
2N5400
2N5401*
2N5400
2N5401
2N5400/D*
2N5401
motorola 1N914 diode datasheet
transistor 2N5401
1N914
2N5400 MOTOROLA
2N5401 MOTOROLA
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PDF
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2N5401
Abstract: 2N5401 motorola 2N5400 2N5401 TO-39
Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA 2N5400 2N5401* Amplifier Transistors PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage
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2N5400/D
2N5400
2N5401*
2N5401
226AA)
2N5400/D*
2N5401 motorola
2N5401 TO-39
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2N5401
Abstract: 2N5400 2N5401 MOTOROLA 2N5401 L
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon •Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIM UM RATINGS Symbol 2N5400 2N5401 Unit C ollector-E m itter Voltage VCEO 120 150 Vdc C ollector-B ase Voltage VCBO
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OCR Scan
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2N5400
2N5401*
2N5400
2N5401
226AA)
2N5401
2N5401 MOTOROLA
2N5401 L
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transistor equivalent book 2N5401
Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage
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2N5400
2N5401*
2N5401
226AA)
Resist218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor equivalent book 2N5401
2n5401 equivalent
BC237
918 TRANSISTOR PNP
bc547 collector base emitter
2n5401 148
2n5400 replacement
2n2222 2n5401 2n5551
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PDF
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2N5401
Abstract: 1N914 2N5400
Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage
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2N5400/D
2N5400
2N5401*
2N5400
2N5401
226AA)
2N5401
1N914
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2N5400
Abstract: 2n5401
Text: 2N5400 2N5401* M AXIMUM RATINGS Rating Sym bol 2N5400 2N5401 Unit Collector-Emitter Voltage VcEO -1 2 0 -1 5 0 Vdc C ollector-Base Voltage v CBO - 130 -1 6 0 Vdc Emitter-Base Voltage VEBO -5 .0 Vdc Collector Current — C o ntin uou s 'c -6 0 0 m A dc Total Device Dissipation
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OCR Scan
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2N5400
2N5401*
2N5401
O-226AA)
2N5400,
2N5401
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2n 5401
Abstract: Diodes 5401
Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit C o lle c to r-E m itte r V oltag e Rating VCEO 120 150 V dc C o lle c to r-B a s e V oltag e
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OCR Scan
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2N5400/D
2N5400
2N5401*
2N5400
2N5401
O-226AA)
2n 5401
Diodes 5401
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PDF
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2N5401
Abstract: 2N5400 MOTOROLA n5401 2N 5401 2N54012
Text: 2N5400 2N5401* M A XIM U M RATINGS Symbol 2N5400 2N5401 Unit Collector-Em itter V oltage v CEO 120 150 V dc Collector-Base V oltage v CBO 130 160 Vdc Em itter-Base V oltage Rating v EBO 5.0 Vdc C ollector Current - C o n tin u o u s >C 600 m Adc Total Device D issip ation
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OCR Scan
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2N5400
2N5401*
2N5400
2N5401
O-226AA)
2N5401
2N5400 MOTOROLA
n5401
2N 5401
2N54012
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PDF
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2N5401
Abstract: 1N914 2N5400 2N5400 MOTOROLA
Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N 5401* PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit C o lle c to r-E m itte r V oltag e Rating VCEO 120 150 V dc C o lle c to r-B a s e V oltag e
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OCR Scan
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2N5400/D
2N5400
2N5401
N5400
2N5401
O-226AA)
1N914
2N5400 MOTOROLA
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transistor 2 SC 3114
Abstract: No abstract text available
Text: ~Tb MOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC <XSTRS,/R D eT | fc,3b7ES4 0Dfl5D4ci 960 F 82049 TZ?'/S M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VCEO 150 Vdc Collector-Base Voltage VCBO 160 Vdc Emitter-Base Voltage Veb o 5.0
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OCR Scan
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MMBT5401
OT-23
O-236AA/AB)
transistor 2 SC 3114
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PDF
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70413080
Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919
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2N3391
SPS-953
MPS-8097,
2N6520
MPS-A18,
2N6539,
SK-3919
2N4249
SPS-690,
PN-2907A
70413080
70473180
SAC-187
Motorola 70483180
70483100
70484200
70487478
70484140
SJ-6357
70483180
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PDF
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TL413
Abstract: crystal SM-49 74LS245DW IN5232B MMBT222ALT1 IC 92112 eeprom MMBT222a ZENER 1n5232 mch315c104kp 95MS15
Text: MOTOROLA SEMICONDUCTOR TECHNICAL INFORMATION BINGO MC68PM302 Passive ISA ISDN Card Signal Documentation Rev 0.6 Monday, March 4, 1996 This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
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MC68PM302
24-bit
0a0000h
0dc000h)
04000h)
TL413
crystal SM-49
74LS245DW
IN5232B
MMBT222ALT1
IC 92112 eeprom
MMBT222a
ZENER 1n5232
mch315c104kp
95MS15
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PDF
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LT1210CT7
Abstract: LT1680 LT1207 LT1207CS LT1210 LT1355CS8 LTC1334 rs232 5v 70V 3 terminal voltage regulator lt1361
Text: DAC LPF 4TH/8THORDER LPF UPSTREAM CHANNEL DOWNSTREAM CHANNEL 12- TO 16-BIT DACs UPDATES AT 400kHz TO 4.4MHz FROM DSP ADC 12- TO 14-BIT ADCs ENCODE AT 300ksps TO 2.2Msps TO DSP 4TH/8THORDER , LTC and LT are registered trademarks of Linear Technology Corporation.
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16-BIT
400kHz
14-BIT
300ksps
LTC1343
LTC1344
DB-25
1-800-4-LINEAR
LT1210CT7
LT1680
LT1207
LT1207CS
LT1210
LT1355CS8
LTC1334
rs232 5v
70V 3 terminal voltage regulator
lt1361
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PDF
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MPS2307
Abstract: differential amplifier 2n5551 2N6520 MOTOROLA BF845 BF844 BF493 MPS A92 transistor 2N6515 2N6516 2N6517
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued High Voltage Amplifier Transistors (TO-92 • EBC)* These high-voltage transistors are designed for driving neon bulbs and Nixie@ indicator tubes, for direct line operation, and for other applications requiring high-voltage capability at relatively low collector current. These devices are listed in
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BF844
MPSA44
BF845
MPSA45
2N6517
BF393
BCX53
BCX78
BCX59
BCX79
MPS2307
differential amplifier 2n5551
2N6520 MOTOROLA
BF493
MPS A92 transistor
2N6515
2N6516
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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PDF
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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PDF
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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PDF
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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PDF
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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PDF
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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PDF
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS R atin g Sym bol V alu e C o lle cto r-E m itte r Voltage VCEO -1 5 0 Unit Vdc C ollector-Base Voltage VCBO - 160 Vdc Em itter-Base Voltage Ve b o MMBT5401LT1* - 5.0 Vdc - 500 m Adc Symbol Max U n it Pd 225 mW 1.8 m w rc R»j a 556 °C/W pd
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OCR Scan
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MMBT5401LT1*
OT-23
O-236AB)
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PDF
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MMBF4856
Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to
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Automat218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MMBF4856
transistor equivalent 2n5551
BF245 application note
MSC1621
74LS04 Fan Out
2n3819 equivalent transistor
MMBF5486L
bf245 equivalent
MPS8093
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PDF
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