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    2N5551 CHIP Search Results

    2N5551 CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    2N5551 CHIP Datasheets Context Search

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    2N5551 circuit

    Abstract: in4148 3mh inductor dc to ac converter 2n5551 EL driver EL driving IN4148 operating frequency M5003 2n5551 chip
    Text: 一華半導體股份有限公司 EL CONTROLE MOSDESIGN SEMICONDUCTOR CORP. M5003 EL LAMP DRIVER IC GENERAL DESCRIPTION 功能叙述 The M5003 is CMOS chip design for Electro-luminescence Lamp EL to light has independent circuit to control switching and


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    PDF M5003 M5003 2N5551 13obm IN4148 2N5551 circuit 3mh inductor dc to ac converter 2n5551 EL driver EL driving IN4148 operating frequency 2n5551 chip

    Untitled

    Abstract: No abstract text available
    Text: 一華半導體股份有限公司 EL CONTROLE MOSDESIGN SEMICONDUCTOR CORP. M5430A/-1 EL LAMP DRIVER IC GENERAL DESCRIPTION 功能敘述 The M5430A is CMOS chip design for Electro-luminescence Lamp EL to light, The operating voltage is DC 3V, single choke be used, and 1 diode, 1 resistor and 2 transistor are necessary.


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    PDF M5430A/-1 M5430A M5430Aï M5430A-1ï 13obm IN4148 2N5551

    Untitled

    Abstract: No abstract text available
    Text: 一華半導體股份有限公司 EL CONTROLE MOSDESIGN SEMICONDUCTOR CORP. M5430A/-1 EL LAMP DRIVER IC GENERAL DESCRIPTION 功能叙述 The M5430A is CMOS chip design for Electro-luminescence Lamp EL to light, The operating voltage is DC 3V, single choke be used, and 1 diode, 1 resistor and 2 transistor are necessary.


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    PDF M5430A/-1 M5430A M5430Aï M5430A-1ï 13obm IN4148 2N5551

    IN4007

    Abstract: IN4007 DC 8A252 transistor in4007 2n5551 128
    Text: PT8A2524-26/34-36/44-46 | |


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    PDF PT8A2524-26/34-36/44-46 50/60hz 50/60Hz 15/30/45/60/90/120/240/480min PT0266-5 IN4007 IN4007 DC 8A252 transistor in4007 2n5551 128

    IN4007

    Abstract: transistor IN4007 IN4007 DC IN4007 F 5V to 240V relay ic IN4007 voltage regulator PT8A2544 2n5551 128 240v relay ic timer relay
    Text: Data Sheet PT8A2524-6/34-6/44-6 Universal Timer Controller |


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    PDF PT8A2524-6/34-6/44-6 20V/240V 50/60Hz PT0266 IN4007 transistor IN4007 IN4007 DC IN4007 F 5V to 240V relay ic IN4007 voltage regulator PT8A2544 2n5551 128 240v relay ic timer relay

    in4007

    Abstract: No abstract text available
    Text: PT8A2524-6/34-6/44-6 | |


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    PDF PT8A2524-6/34-6/44-6 20V/240V 50/60Hz PT0266-4 in4007

    PT8A 3515

    Abstract: PT8A351x 1N4148 temperature sensor PT8A circuit diagram for buzzer circuits
    Text: PT8A3514/15/16/17/18/19 C/D | | |


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    PDF PT8A3514/15/16/17/18/19 60Hz/50Hz 8min/10min/15min PT0336-1 PT8A 3515 PT8A351x 1N4148 temperature sensor PT8A circuit diagram for buzzer circuits

    IN4007

    Abstract: transistor IN4007 in4007 pin configuration IN4007 voltage regulator ic in4007 2n5551 128 IN4007 DC IN4007 application IN4007 maximum input voltage in4007 ic
    Text: PT8A2524-6/34-6/44-6 | |


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    PDF PT8A2524-6/34-6/44-6 20V/240V 50/60Hz PT0266-4 IN4007 transistor IN4007 in4007 pin configuration IN4007 voltage regulator ic in4007 2n5551 128 IN4007 DC IN4007 application IN4007 maximum input voltage in4007 ic

    Untitled

    Abstract: No abstract text available
    Text: PT8A3514/15/16/17/18/19 A/B | |


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    PDF PT8A3514/15/16/17/18/19 60Hz/50Hz PT0259-3

    Untitled

    Abstract: No abstract text available
    Text: PT8A3514/15/16/17/18/19 C/D | | |


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    PDF PT8A3514/15/16/17/18/19 60Hz/50Hz PT0336-1

    relay 5v RAS-0510

    Abstract: PT8A351x PT8A35 PT8A 3515 PT8A 3515A Iron Circuit Diagram 5 pin 5v relay pin out diagram 1N4148 temperature sensor 3514B PT8A
    Text: PT8A3514/15/16/17/18/19 A/B | |


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    PDF PT8A3514/15/16/17/18/19 60Hz/50Hz 8min/10min/15min PT0259-3 relay 5v RAS-0510 PT8A351x PT8A35 PT8A 3515 PT8A 3515A Iron Circuit Diagram 5 pin 5v relay pin out diagram 1N4148 temperature sensor 3514B PT8A

    PT8A 3515A

    Abstract: 5V to 240V relay ic PT8A 3515 1N4007 RELAY IC
    Text: Data Sheet PT8A3514/15/16/17/18/19 A/B Smart Iron Controller |


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    PDF PT8A3514/15/16/17/18/19 60Hz/50Hz PT0259 PT8A 3515A 5V to 240V relay ic PT8A 3515 1N4007 RELAY IC

    5V to 240V relay ic

    Abstract: 1N4007 RELAY IC PT8A 3518C Iron Circuit Diagram 24vdc debounce IC 3516c PT8A 3515 PT8A3 3515C
    Text: Data Sheet PT8A3514/15/16/17/18/19 C/D Smart Iron Controller |


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    PDF PT8A3514/15/16/17/18/19 60Hz/50Hz PT0336 5V to 240V relay ic 1N4007 RELAY IC PT8A 3518C Iron Circuit Diagram 24vdc debounce IC 3516c PT8A 3515 PT8A3 3515C

    PT8A3515

    Abstract: 24vdc debounce IC PT8A3515E PT8A Iron Circuit Diagram ic timer relay 5V to 240V relay ic electric iron POWER INDICATE AUTO OFF TIMER CIRCUIT PT8A3516E
    Text: Data Sheet PT8A3514/15/16/17/18/19 E/F Smart Iron Controller |


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    PDF PT8A3514/15/16/17/18/19 60Hz/50Hz PT0339 PT8A3515 24vdc debounce IC PT8A3515E PT8A Iron Circuit Diagram ic timer relay 5V to 240V relay ic electric iron POWER INDICATE AUTO OFF TIMER CIRCUIT PT8A3516E

    2N5551

    Abstract: CMPT5551 CP316V CXT5551 CZT5551
    Text: PROCESS CP316V Small Signal Transistors NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization


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    PDF CP316V CMPT5551 CXT5551 CZT5551 2N5551 22-March 2N5551 CMPT5551 CP316V CXT5551 CZT5551

    CZT5551

    Abstract: 2N5551 CMPT5551 CP316V CXT5551 2n5551 chip
    Text: PROCESS CP316V Small Signal Transistors NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization


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    PDF CP316V CMPT5551 CXT5551 CZT5551 2N5551 CZT5551 2N5551 CMPT5551 CP316V CXT5551 2n5551 chip

    2N5551

    Abstract: CMPT5551 CP316 CXT5551 CZT5551 2n5551 chip chip die npn transistor
    Text: PROCESS CP316 Central Small Signal Transistor TM Semiconductor Corp. NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS


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    PDF CP316 CMPT5551 CXT5551 CZT5551 2N5551 2N5551 CMPT5551 CP316 CXT5551 CZT5551 2n5551 chip chip die npn transistor

    transistor equivalent CT 2n5551

    Abstract: CP316V-2N5551-CT 2N5832 CMLT5551 CMLT5554 CMPT5551 CMPT5551E CMUT5551 CP316V 2n5551
    Text: PCN #: 118 Notification Date: 19 October 2010 mailto:[email protected] http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Chip process CP316V, NPN high voltage transistors, wafers, and die in chip form. Extent of Change:


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    PDF CP316V, CP316V CP336V CP316V-2N5551-CTAN CP316V-2N5551-CT CP316V-2N5551-WN CMLT5551 CMLT5554 CMPT5551 CMPT5551E transistor equivalent CT 2n5551 CP316V-2N5551-CT 2N5832 CMLT5551 CMLT5554 CMPT5551 CMPT5551E CMUT5551 2n5551

    2N5551 circuit

    Abstract: transistor equivalent 2n5551 1N4148 2N5551 DC to AC converter TA 490 el display
    Text: EL LAMP DRIVER BT6802 FEATURES FUNCTIONS • Single 3V battery operation • Economical solution for EL display • DC to AC conversion • CMOS process and low power consumption • Built-in RC oscillator • No external component needed for delay function


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    PDF BT6802 BT6802 2N5551 circuit transistor equivalent 2n5551 1N4148 2N5551 DC to AC converter TA 490 el display

    2N5551UB

    Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


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    PDF 2N5551HR 2N5551HR 2N5551UB SOC5551 SOC5551SW 2n5551 smd IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1

    Untitled

    Abstract: No abstract text available
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


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    PDF 2N5551HR 2N5551HR

    BT6803

    Abstract: 1N4148 2N5551 EL driving 1.5v watch chip TA 490 el display
    Text: EL LAMP DRIVER BT6803 FEATURES FUNCTIONS • Single 1.5V battery operation • DC to AC conversion • Built-in RC oscillator • Built-in delay function • Three independent trigger inputs: ALM active Low makes EL display for 3.5 seconds delay; TG (active High) makes EL display for 3.5 seconds delay;


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    PDF BT6803 BT6803 1N4148 2N5551 EL driving 1.5v watch chip TA 490 el display

    2n5551 smd

    Abstract: 2N5551HR
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


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    PDF 2N5551HR 2N5551HR 2n5551 smd

    Untitled

    Abstract: No abstract text available
    Text: UNITED MICROELECTRONICS TE DE J T3S5fllE □□□D33B 0 "u n i t e d Ta microelectronics de| massaia 000033^ 1 | ~ 9325812 UNITED MICROELECTRONICS 92D 00339 D 7".7S'-07-0? T40993 Absolute Maximum Ratings* •Comments Supply Voltage . . - 0 . 3 V to +6.2V


    OCR Scan
    PDF T40993 2N3906 2N5401 1N4148 4470K 2N5551