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    2N5551 CIRCUIT Search Results

    2N5551 CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    2N5551 CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5551B

    Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
    Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


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    PDF 2N5551- MMBT5551 MMBT5551 2N5551 OT-23 2N5551 2N5551B tr 5551 2N5551 SOT23 BR 5551 2N5551 circuit 2N5551BU BR N 5551

    Untitled

    Abstract: No abstract text available
    Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


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    PDF 2N5551 MMBT5551 2N5551 OT-23

    2N5551 circuit

    Abstract: 2N5550 2n5551
    Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage


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    PDF 2N5550 2N5551* 2N5551 226AA) Unit10 2N5551 circuit

    TRANSISTOR 2N5550

    Abstract: 2n5551 2N5551 DATA C2N5550 2N5400 2N5401 2N5550 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES


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    PDF M3D186 2N5550; 2N5551 2N5400 2N5401. MAM279 SCA76 R75/04/pp7 TRANSISTOR 2N5550 2n5551 2N5551 DATA C2N5550 2N5401 2N5550 SC-43A

    2N5551G

    Abstract: 2N5551 2N5550G C2N5550 2N55551ZL1 2N5550RLRPG 2N5551RL1G 2N5551RLRAG 2N5551RLRPG 1N914
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140


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    PDF 2N5550, 2N5551 2N5550 2N5550/D 2N5551G 2N5551 2N5550G C2N5550 2N55551ZL1 2N5550RLRPG 2N5551RL1G 2N5551RLRAG 2N5551RLRPG 1N914

    2N5551

    Abstract: 2N55551 2N5551 circuit ALL 2N5551
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Collector − Emitter Voltage VCEO 140 160 Vdc Collector − Base Voltage


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    PDF 2N5550, 2N5551 2N5550 2N5551 2N5550/D 2N55551 2N5551 circuit ALL 2N5551

    2N5551 fairchild

    Abstract: 2N5551 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197
    Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


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    PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551 fairchild 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197

    2N5551 SOT23

    Abstract: 2N5551 circuit 2N5551 MMBT5551 2N5551 fairchild
    Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


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    PDF 2N5551- MMBT5551 2N5551 OT-23 MMBT5551 2N5551 SOT23 2N5551 circuit 2N5551 2N5551 fairchild

    2N5551 diodes inc

    Abstract: 2N5551 circuit diodes inc 2N5551 2N5550 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola
    Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage


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    PDF 2N5550/D 2N5550 2N5551* 2N5550 2N5551 2N5550/D* 2N5551 diodes inc 2N5551 circuit diodes inc 2N5551 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola

    2N5551 circuit

    Abstract: transistor equivalent 2n5551 2N5551 2N555 2N5550G 1N914 2N5550 2N5550RLRA 2N5550RLRAG 2N5550RLRP
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value Unit VCEO 2N5550 2N5551 Collector − Base Voltage


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    PDF 2N5550, 2N5551 2N5550 2N5550/D 2N5551 circuit transistor equivalent 2n5551 2N5551 2N555 2N5550G 1N914 2N5550 2N5550RLRA 2N5550RLRAG 2N5550RLRP

    2n5551

    Abstract: 2N55551 2N5551 circuit 2n5550
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit


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    PDF 2N5550, 2N5551 2N5550 2N5551 2N55551 2N5551 circuit

    2N5551 circuit

    Abstract: 2N5550 2N5551 2N555 1N914
    Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage


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    PDF 2N5550 2N5551* 2N5551 226AA) r14525 2N5550/D 2N5551 circuit 2N5550 2N5551 2N555 1N914

    2N5551

    Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF 2N5551 MMBT5551 2N5551 OT-23 BF242 CBVK741B019 F63TNR MMBT5551 PN2222N

    2N55551

    Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit


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    PDF 2N5550, 2N5551 2N5550 2N5550/D 2N55551 2N5551 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM

    2N5551

    Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF 2N5551 MMBT5551 2N5551 OT-23 CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23

    2N5551

    Abstract: 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5550 2N5551 diodes inc 2N5551 motorola
    Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage


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    PDF 2N5550/D 2N5550 2N5551* 2N5550 2N5551 2N5550/D* 2N5551 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5551 diodes inc 2N5551 motorola

    transistor equivalent 2n5551

    Abstract: 2N5551 equivalent transistor 2n5551 equivalent 2n2222 2n5401 2n5551 2N5551 148 BC237 2n3819 equivalent ic 2N5551 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage VCEO 140 160 Vdc Collector – Base Voltage


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    PDF 2N5550 2N5551* 2N5551 226AA) Resistanc218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor equivalent 2n5551 2N5551 equivalent transistor 2n5551 equivalent 2n2222 2n5401 2n5551 2N5551 148 BC237 2n3819 equivalent ic 2N5551 motorola

    2n5551

    Abstract: 2N5551 SOT23 MMBT5551
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551 SOT23 MMBT5551

    Untitled

    Abstract: No abstract text available
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol


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    PDF 2N5551 MMBT5551 2N5551 OT-23

    2N5551

    Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol


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    PDF 2N5551 MMBT5551 2N5551 OT-23 CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551

    2n5551

    Abstract: 2N5551 SOT23
    Text: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1


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    PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551TA 2N5551TFR 2N5551TF 2N5551BU 2N5551 SOT23

    2N5551B

    Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION


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    PDF 2N5551 2N5551G-x-AB3-R OT-89 2N5551L-x-T92-B 2N5551G-x-T92-B 2N5551L-x-T92-K 2N5551G-x-T92-K 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B 2N5551L-x-T92-A-K

    2N5550

    Abstract: 5551 2n 5551 2N5551 motorola 2NS551 2NSS51
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 ‘Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Vdc C o lle c to r-E m itte r Voltage VCEO 140 160 C o lle c to r-B a s e Voltage


    OCR Scan
    PDF 2N5550 2N5551* 2N5550 2N5551 1N914 2NS851 5551 2n 5551 2N5551 motorola 2NS551 2NSS51