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onsemi 2N5551 Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk
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Onlinecomponents.com	2N5551		13,243			1 - 10 - 100 $1.49 1000 $1.08 10000 $1.08	Buy Now
Semiconductors 2N5551 Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
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Onlinecomponents.com	2N5551		96			1 $2.19 10 $2.19 100 $0.644 1000 $0.644 10000 $0.644	Buy Now
Taitron Components Inc 2N5551 Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Onlinecomponents.com	2N5551		76			1 $0.0219 10 $0.0219 100 $0.0219 1000 $0.0199 10000 $0.0171	Buy Now
Diotec Semiconductor AG 2N5551 Bipolar Transistor - TO-92 - 160V - 600mA - NPN
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Onlinecomponents.com	2N5551					1 - 10 - 100 - 1000 - 10000 $0.0198	Buy Now
KEC 2N5551S-RTK/P SMALL SIGNAL BIPOLAR TRANSISTOR
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Quest Components	2N5551S-RTK/P		2,300			1 $0.71 10 $0.71 100 $0.71 1000 $0.284 10000 $0.284	Buy Now
Ameya Holding Limited	2N5551S-RTK/P		27,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2N5551S Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5551S	Korea Electronics	High Voltage Transistor	Original	PDF
2N5551S	Korea Electronics	EPITAXIAL PLANAR NPN TRANSISTOR	Scan	PDF
2N5551S	Korea Electronics	High Voltage Transistor	Scan	PDF

2N5551S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES 1999. 11. 30 Revision No : 2 1/2	Original	2N5551S	PDF
SOT-23 ZF Abstract: sot 23 zf marking zf ZF NPN SOT-23 2N5551S sot23 transistor marking ZF Text: SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=180V, VCEO=160V H ᴌLow Leakage Current. 3 G A 2 D ᴌHigh Collector Breakdwon Voltage 1 : ICBO=50nA Max. VCB=120V	Original	2N5551S 100MHz SOT-23 ZF sot 23 zf marking zf ZF NPN SOT-23 2N5551S sot23 transistor marking ZF	PDF
sot23 transistor marking ZF Abstract: SOT-23 ZF 2N5551S Text: SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=180V, VCEO=160V D High Collector Breakdwon Voltage 3 G A 2 H Low Leakage Current. 1 : ICBO=50nA Max. VCB=120V	Original	2N5551S 100MHz sot23 transistor marking ZF SOT-23 ZF 2N5551S	PDF
SOT-23 Mark ZF Abstract: Mark ZF SOT-23 ZF 2N5551S ZF marking ZF SOT23 sot 23 zf MARKING ZF SOT-23 Text: SEMICONDUCTOR 2N5551S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZF No. 1 Item Marking Device Mark ZF 2N5551S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method	Original	2N5551S OT-23 SOT-23 Mark ZF Mark ZF SOT-23 ZF 2N5551S ZF marking ZF SOT23 sot 23 zf MARKING ZF SOT-23	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 A 3 G : VCBO=180V, VCEO=160V H ・Low Leakage Current. 1 : ICBO=50nA Max. VCB=120V	Original	2N5551S 100MHz	PDF
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent	PDF
khb9D5N20P Abstract: khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb9D5N20P khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor	PDF
2n5551 smd Abstract: 2N5551HR Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	2N5551HR 2N5551HR 2n5551 smd	PDF
KIA78pI Abstract: transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78pI transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P	PDF
2N5551UB Abstract: package LCC-3 Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet — production data Features 3 BVCEO 160 V IC max 0.5 A 1 HFE at 5 V - 10 mA > 80 Operating temperature range -65 °C to +200 °C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL	Original	2N5551HR 2N5551HR 2N5551UB package LCC-3	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
2N5551S Abstract: MMBT5551LT1 Text: MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTAGE TRANSISTOR o 1 Collector Dissipation:Pc-225mW Ta=25 Collector-Emiller Voltage: V CEO= 160V 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS	Original	MMBT5551LT1 OT-23 Pc-225mW 100mA 2N5551S MMBT5551LT1	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
st smd diode marking code Abstract: 2N5551HR marking code my SMD Transistor npn smd diode order marking code stmicroelectronics ST MAKE SMD TRANSISTOR 2N5551 marking code br 39 SMD NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODES Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified	Original	2N5551HR 2N5551HR st smd diode marking code marking code my SMD Transistor npn smd diode order marking code stmicroelectronics ST MAKE SMD TRANSISTOR 2N5551 marking code br 39 SMD NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODES	PDF

MB4213 Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors	Original	SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD	PDF
2N5551UB Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1 Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	2N5551HR 2N5551HR 2N5551UB SOC5551 SOC5551SW 2n5551 smd IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1	PDF
KF6N60 Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION	Original	USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05	PDF
Untitled Abstract: No abstract text available Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■	Original	2N5551HR 2N5551HR	PDF
2N5551S Abstract: sot23 transistor marking ZF Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO LTD 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM • High Collector Breakdwon Voltage : V Cbo=180V, V Ceo=160V • Low Leakage Current. : ICBo=50nA Max. V cb=120V	OCR Scan	2N5551S 100MHz 250//A 300//S, 2N5551S sot23 transistor marking ZF	PDF
2N5551S Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM A B C D E G H J K L M N P • High Collector Breakdwon Voltage : VCbo=180V, VCeo=160V • Low Leakage Current. : ICBo=50nA Max. VCb=120V	OCR Scan	2N5551S 100MHz 250//A 300//S, 2N5551S	PDF

2N5551S Search Results

2N5551S Price and Stock

onsemi 2N5551

Semiconductors 2N5551

Taitron Components Inc 2N5551

Diotec Semiconductor AG 2N5551

KEC 2N5551S-RTK/P

2N5551S Datasheets (3)

2N5551S Datasheets Context Search

Untitled

SOT-23 ZF

sot23 transistor marking ZF

SOT-23 Mark ZF

Untitled

alternator diode 1776 B

khb*9D5N20P

2n5551 smd

KIA78*pI

2N5551UB

MN1280

2N5551S

oz960

st smd diode marking code

MB4213

2N5551UB

KF6N60

Untitled

2N5551S

2N5551S