Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N5873 Search Results

    SF Impression Pixel

    2N5873 Price and Stock

    Microchip Technology Inc 2N5873

    PNP POWER TRANSISTOR SILICON AMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N5873 Bulk 100
    • 1 -
    • 10 -
    • 100 $40.8003
    • 1000 $40.8003
    • 10000 $40.8003
    		Buy Now
    Avnet Americas 2N5873 Bulk 36 Weeks 100
    • 1 $43.0612
    • 10 $43.0612
    • 100 $37.97625
    • 1000 $39.69137
    • 10000 $39.69137
    		Buy Now
    Mouser Electronics 2N5873
    • 1 -
    • 10 -
    • 100 $43.94
    • 1000 $43.94
    • 10000 $43.94
    		Get Quote
    Newark 2N5873 Bulk 100
    • 1 -
    • 10 -
    • 100 $40.8
    • 1000 $39.24
    • 10000 $39.24
    		Buy Now
    Microchip Technology Inc 2N5873 36 Weeks
    • 1 $43.94
    • 10 $43.94
    • 100 $43.94
    • 1000 $43.94
    • 10000 $43.94
    		Buy Now
    Onlinecomponents.com 2N5873
    • 1 -
    • 10 -
    • 100 $38.95
    • 1000 $38.95
    • 10000 $38.95
    		Buy Now
    NAC 2N5873 Tray 7
    • 1 $44.83
    • 10 $44.83
    • 100 $41.29
    • 1000 $38.27
    • 10000 $38.27
    		Buy Now
    Master Electronics 2N5873
    • 1 -
    • 10 -
    • 100 $38.95
    • 1000 $38.95
    • 10000 $38.95
    		Buy Now

    SES 2N5873

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N5873 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components 2N5873 1
    • 1 $32.5
    • 10 $32.5
    • 100 $32.5
    • 1000 $32.5
    • 10000 $32.5
    		Buy Now

    Advanced Semiconductor Inc 2N5873

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5873 9
    • 1 $69.6408
    • 10 $62.6767
    • 100 $62.6767
    • 1000 $62.6767
    • 10000 $62.6767
    		Buy Now

    2N5873 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5873 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=7 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=115 Original PDF
    2N5873 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5873 API Electronics Short form transistor data Short Form PDF
    2N5873 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N5873 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N5873 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
    2N5873 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5873 General Transistor Power Transistor Selection Guide Scan PDF
    2N5873 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5873 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5873 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5873 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5873 Unknown Transistor Replacements Scan PDF
    2N5873 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5873 Unknown Cross Reference Datasheet Scan PDF
    2N5873 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5873 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5873 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5873 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N5873 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N5873 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5873

    Abstract: 2N5874
    Text: SavantIC Semiconductor Product Specification 2N5873 2N5874 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2N5873 2N5874 2N5873 2N5874

    2N5873

    Abstract: No abstract text available
    Text: 2N5873 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5873 O204AA) 31-Jul-02 2N5873

    2N5873

    Abstract: No abstract text available
    Text: 2N5873 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5873 O204AA) 16-Jul-02 2N5873

    MAX607

    Abstract: No abstract text available
    Text: 2N5873 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5873 O204AA) 18-Jun-02 MAX607

    2N5873

    Abstract: 2N5874
    Text: Inchange Semiconductor Product Specification 2N5873 2N5874 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2N5873 2N5874 2N5873 2N5874

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    BUZ901P

    Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
    Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0


    Original     		PDF BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410

    B0719

    Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH


    Original     		PDF BU4080 BU606 O-220var O-220AB O-220 B0719 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5873

    Abstract: 2N5874
    Text: TYPES 2N5873, 2N5874 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS 00 H FOR PO W ER -AM PLIFIER A N D HIGH-SPEED-SW ITCHING APPLICATIO N S DESIG NED FOR C O M PLEM EN TA R Y USE W ITH 2N 5871, 2N 5872 C < I - TJ i— m m v> “ H N "mechanical data •


    OCR Scan     		PDF 2N5873, 2N5874 2N5873 2N5873

    2N5872

    Abstract: 2N5871
    Text: TYPES 2N5871, 2N5872 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5873, 2N5874 • 115 Watts at 25°C Case Temperature • 7-A Rated Continuous Collector Current


    OCR Scan     		PDF 2N5871, 2N5872 2N5873, 2N5874 2N5871

    2N3233

    Abstract: 2N3232 2N3234 2N5873 2N5874 2N6315 2N6316 2N6317 2N6318 2N1724A
    Text: A P T FI.ECTRONICS A P I INC 26C 0 0 2 2 8 ELECTRONICS INC at "T-&3~.D{ D e | D I ^ S T a DOOOSEfl □ ~ COLLECTOR CURRENT = 7 AMPS NPN TYPES - CONTINUED Device No 2N5873 2N5874 2N6315 2N6316 VCBO v CEO (sus Case Volts Volts 60 60 TO-3 80 80 TO-3 60 TO-66 60


    OCR Scan     		PDF T-33-0Ã 0043S 2N5873 2N5874 2N6315 2N6316 2N6317 2N6318 AP1084 2N1724 2N3233 2N3232 2N3234 2N1724A

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


    OCR Scan     		PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    NES 2N5672

    Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
    Text: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE


    OCR Scan     		PDF 0-100V D0D00S4 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 2N3716 NES 2N5672 2N4904 5330-30 2N5867

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    transistor 40411

    Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
    Text: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30


    OCR Scan     		PDF TC-25Â 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N4347 2N3715 2N3791 transistor 40411 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF