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    2N6099 NPN Search Results

    2N6099 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    2N6099 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6099

    Abstract: 2N6101 2n6099 npn 2N6098 2N6100
    Text: Inchange Semiconductor Product Specification 2N6098 2N6099 2N6100 2N6101 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High current capability APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN


    Original     		2N6098 2N6099 2N6100 2N6101 O-220 2N6098 2N6100 2N6099 2N6101 2n6099 npn PDF

    2N6099

    Abstract: 2N6101 2N6098 2N6100 2n6099 npn 6099
    Text: SavantIC Semiconductor Product Specification 2N6098 2N6099 2N6100 2N6101 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION


    Original     		2N6098 2N6099 2N6100 2N6101 O-220 2N6098 2N6099 2N6100 2N6101 2n6099 npn 6099 PDF

    2N6101

    Abstract: 2N6099 2N6098 2N6100 6099 2n6099 npn
    Text: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION ・・With TO-220 package APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		2N6098 2N6099 2N6100 2N6101 O-220 2N6098 2N6100 2N6099 2N6101 6099 2n6099 npn PDF

    BD278

    Abstract: RCA3055 2N5578
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont'd h v C E O ( us) S V C E X V (sus) V FE V 'cEX-mA <C A V CE V Temp.-°C 25 V C £ (sat)-V •c A CE V >B A 2N5578 FAMILY (n-p-n) High Current, High Po - 0.4 MHz min; P j = 300 W max T 2N5575


    Original     		2N5578 2N5575 2N5578* 2N5786 O-39/TO-205MD O-5/TO-205MA 2N5785 2N5784 2ISI6103 BD278 RCA3055 PDF

    radiator

    Abstract: RCA1C09
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont'd h v C E O ( us) S V C E X V (sus) V FE V 'cEX-mA <C A V CE V Temp.-°C 25 V C £ (sat)-V •c A CE V >B A 2N5578 FAMILY (n-p-n) High Current, High Po - 0.4 MHz min; P j = 300 W max T 2N5575


    Original     		2N5578 2N5575 2N5578* 2N5786 O-39/TO-205MD O-5/TO-205MA 2N5785 2N5784 2ISI6103 radiator RCA1C09 PDF

    7 amps pnp transistor

    Abstract: b0243c B0239C NPN 1.5 AMPS POWER TRANSISTOR b0244c B0239A npn transistor bd243c PNP POWER TRANSISTOR TO220 B0244A 75W NPN TO220
    Text: PLASTIC POWER P L A S T IC P O W E R T R A N S I S T O R S E L E C T O R C H A R T lc 4 Amps VCE° Volts N PN PN P 5 Amps N PN 7 Amps PN P N PN PN P > 7 Amps N PN PN P 10 Amps NPN 2N6288 2N6111 30 2N6103 40 BD239 BD240 BD241 BD242 BD243 BD244 BD243A BD244A 2N6099


    OCR Scan     		2N6288 2N6111 2N6103 BD239 BD241 BD243 2N6290 2N6109 BD239A BD240A 7 amps pnp transistor b0243c B0239C NPN 1.5 AMPS POWER TRANSISTOR b0244c B0239A npn transistor bd243c PNP POWER TRANSISTOR TO220 B0244A 75W NPN TO220 PDF

    2N3055 TO-220

    Abstract: 7 amps pnp transistor 2N3055 2N6103 B0243C 2N3055 TO220 BD243 TRANSISTOR T0220 2N6101 75W PNP
    Text: NPN DIFFUSED JUNCTION T A B L E 1 - NPN S ILIC O N D IF F U S E D JU N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a wide variety


    OCR Scan     		2N6103 T0-220 2N3055* 2N3442 2N6101 O-220 2N3441 2N6288 2N6111 2N6103 2N3055 TO-220 7 amps pnp transistor 2N3055 B0243C 2N3055 TO220 BD243 TRANSISTOR T0220 75W PNP PDF

    TIP 2n3055

    Abstract: tip41c tip42c 2n3055 2N3055 TO-220 2n3055 application note OF transistor 2n3055 to-3 package 7 amps pnp transistor 2N3055 TO220 NPN 1.5 AMPS POWER TRANSISTOR n6111 2N6103
    Text: NPN DIFFUSED JUNCTION T A B L E 1 - N P N S IL IC O N D IF F U S E D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching


    OCR Scan     		2N6103 2N3055 FGT3055 T0-220 2N3442 2N610KAGE) 2N6288 2N6111 TIP29 TIP30 TIP 2n3055 tip41c tip42c 2n3055 2N3055 TO-220 2n3055 application note OF transistor 2n3055 to-3 package 7 amps pnp transistor 2N3055 TO220 NPN 1.5 AMPS POWER TRANSISTOR n6111 PDF

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEHICOND/DISCRETE 'IS NPN DIFFUSED JUNCTION i - 33. D ËT | 725GS33 □oo4cmb j / T A B L E 1 - N P N S IL IC O N D IF F U SE D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a


    OCR Scan     		725GS33 2N6103 O-220 2N3055 FGT3055 2N3442 2N6101 T0-220 2N6099 PDF

    2N3055 TO-220

    Abstract: 2n3055 to 220 2N3055 TO220 2N3055 2N6103 FGT3055 "Solenoid Drivers" 2N3442 2N3054 2N3441
    Text: NPN DIFFUSED JUNCTION T A B L E 1 - N P N S IL IC O N D IF F U S E D J U N C T IO N T R A N S IS T O R S The transistors show n in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching


    OCR Scan     		2N6103 2N3055 FGT3055 T0-220 2N3442 2N610t, 2N3055 TO-220 2n3055 to 220 2N3055 TO220 "Solenoid Drivers" 2N3054 2N3441 PDF

    2N3055

    Abstract: 2N3055 TO220 2N3055 TO-220 "Solenoid Drivers" 2N3442 2N6103 2N3054 2N3441 2N6099 2N6101
    Text: NPN DIFFUSED JUNCTION T A B L E 1 - NPN S ILIC O N D IF F U S E D JU N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a wide variety


    OCR Scan     		2N6103 T0-220 2N3055* 2N3442 2N6101 O-220 2N3055 2N3055 TO220 2N3055 TO-220 "Solenoid Drivers" 2N3054 2N3441 2N6099 PDF

    2N3055 TO-220

    Abstract: FGT3055 2N3054 2N3055 2N3440 2N3441 2N3442 2N3583 2N6099 2N6101
    Text: NPN DIFFUSED JUNCTION TABLE 1 -N P N SILICON DIFFUSED JUNCTION TRANSISTORS The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching


    OCR Scan     		2N6103 2N3055 FGT3055 T0-220 2N3442 2N610y 2N3441 2N3585 2N3584 2N3055 TO-220 2N3054 2N3440 2N3583 2N6099 2N6101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-220 Case TYPE NO. NPN PNP >C PD A (W) MAX @ 1C hFE BVCBO BVCEO (A) (V) 00 MIN MIN MIN MAX VCE(SAT) @ 1C (V) (A) MAX fT (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60


    OCR Scan     		O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6387 2N6667 PDF

    transistor c117

    Abstract: JAN2N3055 C116 2N3232
    Text: SOLITRON DEVICES INC TSD D ~ X - g >\ -o \ fl3bflbOS 0002TG7 7 ^ [^ © ü © ? © A T M ,© * MEDIUM VOLTAGE a lit r o • Devices, inc CHIP N U M BER NPN SINGLE DIFFUSED MESA TRANSISTOR (FORMERLY 45) CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.


    OCR Scan     		0002TG7 2N3232, 2N6099, 2N6101 C-116 C-117 transistor c117 JAN2N3055 C116 2N3232 PDF

    transistor c117

    Abstract: JAN2N3055 2N3232
    Text: MEDIUM VOLTAGE Devices. Inc. CHIP NUMBER NPN SINGLE DIFFUSED MESA TRANSISTOR FORMERLY 45 CONTACT METALLIZATION B a se. Emitter and Collector Solder Coated 9 5 /5 % lead /tin. A SSEM B LY R EC O M M E N D A TIO N S It is advisable that: a ) the chip b e assem bled in a reducing g a s atm osphere.


    OCR Scan     		12nun) JAN2N3055, 2N6253. 2N3232. 2N6099. 2N6101 C-116 C-117 transistor c117 JAN2N3055 2N3232 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors f TO-220 Case TYPE NO. NPN PNP «C PD bvcbo BVCEO A (W) (V) (V) MIN MIN tm MAX MAX • ic (A) VCE(SAT) @ 1C (V) (A) fr (MHz) MIN MAX 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80


    OCR Scan     		O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6043 2N6044 PDF

    2N6476

    Abstract: 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6099 2N6101
    Text: O Power Transistors TO-220 Case TYPE NO. NPN PNP >C PD A (W) MAX @ ic hFE BVCBO BVCEO (A) (V) 00 MIN MIN MIN MAX VCE(SAT) @ IC (V) (A) fT (MHz) MIN MAX 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80


    OCR Scan     		O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2n6043 2n6040 2N6476 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6099 2N6101 PDF

    2N3055

    Abstract: 2N3055 TO-220 2N3054 2N3440 2N3441 2N3442 2N3583 2N3584 2N6099 2N6101
    Text: NPN DIFFUSED JUNCTION TABLE 1 - NPN SILICON DIFFUSED JUNCTIO N TRANSISTORS The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a w ide variety


    OCR Scan     		2N6103 T0-220 2N3055* 2N3442 2N6101 O-220 2N3441 2N3585 2N3584 2N3055 2N3055 TO-220 2N3054 2N3440 2N3583 2N6099 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 3?E J> 8133107 00D005S 7 • SMLB ■iMIJSMJ:1 Type No. Option 2N6038 Polarity Package < o m O h * tfftr rtfm iii •c cont hF E @ V c e /1c fT Pd NPN NPN NPN PNP PNP SOT 3 2 SOT32 T063 T066 TO 3 60 80 100 55 60 4 4 29 4 12 750-15k 750-15k 20-100


    OCR Scan     		00D005S 2N6038 750-15k 750-12k 750-18k 750min PDF

    MJE3055F

    Abstract: SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440 2N5683 2N5684 2N5685
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)


    OCR Scan     		2N5685 2N5683 2N5686 2N5684 2N3440 2N6387* 1K/20K O-220 MJE30S5F MJE3055F SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440 PDF

    TIP31c PNP Transistor

    Abstract: n6111 FGT3055 TIP41C TRANSISTOR Tip41-Tip42 TIP32 NPN Transistor BD243 TIP41/TIP42 Transistor 2n6099 tip30c
    Text: PLASTIC POWER P L A S T IC PO W ER T R A N S IS T O R S E L E C T O R C H A R T TO-220 P A C K A G E lc 3 Am ps (TIP) lc 4 Am ps (BD) V CEO Volts NPN PNP 7 Am ps 5 Am ps NPN NPN PNP 2N6288 2N6111 PNP 30 7 Am ps NPN PNP 40 TIP29 TIP30 TIP31 TIP32 TIP41 TIP42


    OCR Scan     		O-220 2N6288 2N6111 TIP29 TIP30 TIP31 TIP32 TIP41 TIP42 2N6103 TIP31c PNP Transistor n6111 FGT3055 TIP41C TRANSISTOR Tip41-Tip42 TIP32 NPN Transistor BD243 TIP41/TIP42 Transistor 2n6099 tip30c PDF

    JE2901

    Abstract: 2N6044 JE802T JE802 JE801T JE702 LM3661TL-1.40
    Text: o Power Transistors T Y P E NO. NPN PNP @ ic ic PD B V C BO BVCEO A (W) (V) (V) MIN MIN MIN MAX MAX hFE (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60 20 80 1.5


    OCR Scan     		2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6043 2N6044 2N6045 JE2901 JE802T JE802 JE801T JE702 LM3661TL-1.40 PDF

    mje13007

    Abstract: No abstract text available
    Text: O Power Transistors TO-220 Case TYPE NO. NPN PNP tc PD <A W) MAX BVCBO BVCEO @ ic hFE <V) 00 MIN MIN MIN MAX (A) VCE(SAT) @ 1C CO (A) MAX fr (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80


    OCR Scan     		O-220 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6040 2N6041 mje13007 PDF

    radiator 0,019

    Abstract: 2n5578
    Text: •■i ■1 Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d hFE \ / a w~ (CMC1 CEO V CEX V VcE^^- V 'C E X -m A ' ‘c A V CE V Tem p.—°C 25 V CE V •c A 2N5578 FAMILY (n-p-n) High Current, High Power f y = 0.4 MHz min; P y = 300 W max


    OCR Scan     		2N5578 2N5575 2N5786 2N5783 2N5785 O-39/TO-205MD O-5/TO-205M 2N6103 radiator 0,019 PDF