NSP5665
Abstract: sat 1205
Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1481 *
|
Original
|
2N1479
2N1480
2N1481
2N1482
2N1483
2N1484
2N1485
2N1486
O-254
NSP6340
NSP5665
sat 1205
|
PDF
|
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
|
Original
|
2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
|
PDF
|
2n3055 motorola
Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,
|
Original
|
1PHX11122C
2n3055 motorola
tip122 tip127 audio amp schematic
transistor equivalent book 2sc2238
IR640
transistor motorola 40411
TRANSISTOR REPLACEMENT GUIDE
ir431
motorola AN485
C2688
2SA1046
|
PDF
|
TO-59 Package
Abstract: 2n3265 2N4002 2N3597 80240C TO61 package 2N6279 TO63 package 25120
Text: BIPOLAR MPN POW ER TRANSISTORS PACKAGE TO-1 1 1 PACKAGE TO-59 PACKAGE TO-61 PACKAGE TO-63 DEVICE TYPE BVceo vous 2N2877 2N2878 2H2879 2N3996-* T VCE sät max VOLTS AMPS hFE min/max *C @ VCE A V 50 5.0 20-60 1.0/2.0 2.0 5.0/0.5 50 5.0 40-120 2.0 5.0/0.5 70
|
OCR Scan
|
2N2877
2N2878
2H2879
2N3996-*
2N3997"
2M2880*
2N3998*
2M3999"
2N2811
2N2812*
TO-59 Package
2n3265
2N4002
2N3597
80240C
TO61 package
2N6279
TO63 package
25120
|
PDF
|
2n60n
Abstract: 2N6235 2N6078 2N5968 2N5970 2N6032 2N6033 2N6046 2N6215 2N6060
Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN SAT . VO LTA GES M ax. h F: E V OLTAGE S NPN 'c 'c CASE VCB V CE V EB V CE (V) (A) M in. Max. (A) !b (A) V CE (V) V BE (V) 2N5968 TO-63/I 100 100 10 10 10 30 120 10 1.5 1.2 2 2N5970 TO-3 80 80
|
OCR Scan
|
2N5968
O-63/I
2N5970
2N6032
2N6033
2N6046
2N6047
2N6060
2N6062
2n60n
2N6235
2N6078
2N6215
|
PDF
|
SILICON TRANSISTOR CORP
Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V
|
OCR Scan
|
8E54022
FE20-120
30MHz
fTTo40M
50MHz
2N4863
2N5662
N5663
2N5333
SILICON TRANSISTOR CORP
STP515
2N4114
2N4211
2n5609 transistor
2N5627
2N5678
2N5251
2n5609
stp6060
|
PDF
|
2n60n
Abstract: 2N6063 2N6232 2N6274 2N5968 2N5970 2N6032 2N6033 2N6046 2N6047
Text: Tl LU /N S IT > BRE V n NPN D E V IC E < • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST S A T V O L T A G E S ( M i iX . E VCE , ÍY J _ 1.2 V BE (V) 'c (A) 10 30 120 10 (A j_ 1.5 4 1.5 20 100 1.5 1.25 2 3 7 2 50 10 50 50 5 1.3 2 120 8 2 40 10 50
|
OCR Scan
|
2N5968
O-63/I
2N5970
2N6032
2N6033
2N6046
2N6047
2N6048
2N6060
2N6062
2n60n
2N6063
2N6232
2N6274
|
PDF
|
2N54115
Abstract: 2N5286 2N3023
Text: ^ pF | 613Mb'i3 □□□□155 7 | "T'-<^ 7-Q | NPN SILICON POWER TRANSISTORS Cont’d 8134693 SEMICQA Maximum Ratings Device Dissipation Type No. @25°C ic VCB (Cont.) NPN Volts (Case) Amps Watts 30 120 2N6271 100 30 120 2N6273 100 30 110 2N5933 175 30
|
OCR Scan
|
613Mb'
2n6271
2n6273
2n5933
2n5936
2n5930
to-63
sca14066
2n5931
2n6322
2N54115
2N5286
2N3023
|
PDF
|
SILICON TRANSISTOR CORP
Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
Text: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O
|
OCR Scan
|
2N6192
2N6193
2N6211
2N6212
2N6213
2N6214
2N6215
2N6216
2N6217
2N6226
SILICON TRANSISTOR CORP
2NXXXX
TO53 package
2nxxx
transistor 2N6274
2N6353
TRANSISTOR TO63
|
PDF
|
2N6960
Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
Text: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50
|
OCR Scan
|
2N6546
2N6547
SDT14411
SDT14412
SDT14413
SDT14414
SDT14415
2N6246
2N6247
O-114
2N6960
TO114
SDT96302
SDT96303
2N4002
2N5678
2N421
2N6742
2N6884
SDT8756
|
PDF
|
2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
|
OCR Scan
|
2N2387
2N2988
2N2S89
2N2990
2N2991
2N2992
2N2993
2N2994
2N3439
2N3440
2NS604
2NS540
2NS154
SD716
SDT13305
2N5671
2N5005
SDT425
SDT7605
SDT96302
|
PDF
|
1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
|
OCR Scan
|
1N5000
1N5001
1N5002
1N5003
1N5149
1N5150
1N5153
1N5155
1N5158
1N5159
1N5160
MAX 6438 GEO SEMICONDUCTORS
2N6058
transistor bf 175
2N3902
2N5696
1N5788
Germanium itt
|
PDF
|
in5388
Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor
|
OCR Scan
|
plu300
in5388
2N5161
germanium
4m28
Germanium drift transistor
2N5070
1NS248
2N5271
inverter welder 4 schematic
|
PDF
|
aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
|
OCR Scan
|
11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
|
PDF
|
|
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
|
PDF
|