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    2N631 Price and Stock

    Microchip Technology Inc 2N6316

    TRANS NPN 80V 7A TO66
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    Microchip Technology Inc 2N6317

    TRANS PNP 60V 7A TO-213AA
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    Central Semiconductor Corp 2N6318

    TRANSISTOR
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    Microchip Technology Inc 2N6318

    TRANS PNP 80V 7A TO66
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    Microchip Technology Inc 2N6315

    TRANS NPN 60V 7A TO66
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    2N631 Datasheets (190)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N631 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N631 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N631 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N631 Unknown GE Transistor Specifications Scan PDF
    2N631 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N631 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N631 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N631 Unknown Vintage Transistor Datasheets Scan PDF
    2N631 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N631 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6310 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6310 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6311 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6311 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6312 Central Semiconductor Power Transistors Original PDF
    2N6312 Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Original PDF
    2N6312 Boca Semiconductor COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Scan PDF
    2N6312 Diode Transistor Transistor Short Form Data Scan PDF
    2N6312 Diode Transistor Transistors Scan PDF
    2N6312 General Transistor Power Transistor Selection Guide Scan PDF
    ...

    2N631 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6317

    Abstract: 2N6318
    Text: SavantIC Semiconductor Product Specification 2N6317 2N6318 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6315/6316 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications


    Original
    PDF 2N6317 2N6318 2N6315/6316 2N6317 2N6318

    Untitled

    Abstract: No abstract text available
    Text: 2N4231A 2N4232A 2N4233A 2N6312 2N6313 2N6314 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process,


    Original
    PDF 2N4231A 2N4232A 2N4233A 2N6312 2N6313 2N6314 2N4231A,

    Untitled

    Abstract: No abstract text available
    Text: 2N6313 60V complementary PNP silicon power transistor 3.75 Transistors Transistors Bi. Page 1 of 1 Enter Your Part # Home Part Number: 2N6313 Online Store 2N6313 Diodes 60V complementary PNP silicon power transistor Transistors Integrated Circuits Optoelectronics


    Original
    PDF 2N6313 2N6313 com/2n6313

    Untitled

    Abstract: No abstract text available
    Text: 2N6316 2N6318 MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) COMPLEMENTARY SILICON


    Original
    PDF 2N6316 2N6318 O-213AA)

    Untitled

    Abstract: No abstract text available
    Text: 2N6316 80 V complementary NPN silicon power transistor 20.00 Transistors Transistors . Page 1 of 2 Enter Your Part # Home Part Number: 2N6316 Online Store 2N6316 Diodes 80 V complementary NPN silicon power transistor Transistors Integrated Circuits Optoelectronics


    Original
    PDF 2N6316 2N6316 com/2n6316

    Untitled

    Abstract: No abstract text available
    Text: 2N6315 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N6315 O213AA) 1-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6318 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N6318 O213AA) 1-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6314 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    PDF 2N6314 O213AA) 30-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6313 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    PDF 2N6313 O213AA) 30-Jul-02

    2N6318

    Abstract: 2N6317
    Text: Inchange Semiconductor Product Specification 2N6317 2N6318 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6315/6316 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications


    Original
    PDF 2N6317 2N6318 2N6315/6316 2N6317 N6317 2N6318

    2N6315

    Abstract: 2N6317 2N6318 2N6316
    Text: DATA SHEET 2N6315 2N6317 2N6316 2N6318 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-66 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6315 Series types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and


    Original
    PDF 2N6315 2N6317 2N6316 2N6318 2N6315 2N6317, 2N6317 2N6318 2N6316

    Untitled

    Abstract: No abstract text available
    Text: 2N6316 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N6316 O213AA) 30-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6318 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N6318 O213AA) 30-Jul-02

    2N6316

    Abstract: 2N6315
    Text: SavantIC Semiconductor Product Specification 2N6315 2N6316 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6317/6318 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications


    Original
    PDF 2N6315 2N6316 2N6317/6318 2N6315 2N6316

    2N6312

    Abstract: 2N6313 2N6314
    Text: SavantIC Semiconductor Product Specification 2N6312 2N6313 2N6314 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications


    Original
    PDF 2N6312 2N6313 2N6314 2N6312 2N6313 2N6314

    2N6314

    Abstract: 2N6312 2N6313
    Text: Inchange Semiconductor Product Specification 2N6312 2N6313 2N6314 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications


    Original
    PDF 2N6312 2N6313 2N6314 2N6312 2N6313 2N6314

    2N6312

    Abstract: No abstract text available
    Text: 2N6312 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    PDF 2N6312 O213AA) 1-Aug-02 2N6312

    2N6316

    Abstract: 2N6315
    Text: Inchange Semiconductor Product Specification 2N6315 2N6316 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6317/6318 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications


    Original
    PDF 2N6315 2N6316 2N6317/6318 2N6315 2N6316

    Untitled

    Abstract: No abstract text available
    Text: 2N6315 and 2N6316 NPN SILICON POWER TRANSISTOR Available DESCRIPTION These 2N6315 and 2N6316 devices are an excellent choice for un-tuned amplifier applications. It is also ideal for general purpose power switch and amplifier applications. Microsemi also offers numerous other products to meet higher and lower power voltage


    Original
    PDF 2N6315 2N6316 2N6316 O-213AA 2N6317 2N6318. T4-LDS-0282,

    2n6318

    Abstract: No abstract text available
    Text: 2N6317 and 2N6318 PNP SILICON POWER TRANSISTOR Available DESCRIPTION These 2N6317 and 2N6318 devices are an excellent choice for un-tuned amplifier applications. It is also ideal for general purpose power switch and amplifier applications. Microsemi also offers numerous other products to meet higher and lower power voltage


    Original
    PDF 2N6317 2N6318 2N6318 O-213AA 2N6315 2N6316. T4-LDS-0283,

    Untitled

    Abstract: No abstract text available
    Text: MOTOROL A SC ÍXSTRS/R F> 6367254 MOTOROLA SC XSTR S/R F 96D 80464 - NPN MOTOROLA - 3 3 - / 3 7^ 3 «3 - 2N6315, 2N6316 SEMICONDUCTOR PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS


    OCR Scan
    PDF 2N6315, 2N6316 2N6317, 2N6318

    FA 23843

    Abstract: 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919
    Text: Micmsemi PNP Transistors Part Number PNP 2N5312 2N586S 2N5677 2N5737 2N5316 2N5318 2NS738 2N5314 2NS872 2N6318 2N5007 2N5009 2N6594 2N5741 2N5742 2N5871 2N6317 2N5853 2N7369 2N5621 2N5623 2N5625 2N5290 2N5291 2N5627 2N6127 2N6246 2N6469 2N6247 2N6248 2N6226


    OCR Scan
    PDF O-254 PNP-10 FA 23843 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919

    2N6317

    Abstract: 2N6315 2N6316 2N6318
    Text: ÆàMOSPEC COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS . designed for general-purpose power amplifier and application. 2N6315 PNP 2N6317 FEATURES: 2N6316 2N6318 NPN * Low Collector-Emitter Saturation Voltage v ce<sat = 1 0 v M»c) @ >c = 4.0 A * Excellent DC Current Gain- hFE = 20 (Min) @ lc =2.5A


    OCR Scan
    PDF 2N6315 2N6317 2N6316 2N6318 2N6317 2NS318 T2N6317 2N6318

    t066

    Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
    Text: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317


    OCR Scan
    PDF QD0D443 2N6278 2N6279 2N6280 2N6281 2N6282 750-18k 2N6283 2N6284 t066 2n6354a 2N6285