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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-370
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-370
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65-C Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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2N65-C
2N65-C
QW-R502-B35
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2n65 MOSFEt
Abstract: mosfet 2n65 2N65
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-370
2n65 MOSFEt
mosfet 2n65
2N65
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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2n65 MOSFEt
Abstract: 2N65 power mosfet 2N65 2N65L 2N65G-TM3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-370
2n65 MOSFEt
2N65 power mosfet
2N65
2N65L
2N65G-TM3-T
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2n65 MOSFEt
Abstract: 2N65 mosfet 2n65 2N65G-TM3-T 2N65G-TA3-T QW-R502-370 2N65L
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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QW-R502-370
2n65 MOSFEt
2N65
mosfet 2n65
2N65G-TM3-T
2N65G-TA3-T
2N65L
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2N65
Abstract: 2N65 power mosfet 2n65 MOSFEt 25V 1A power MOSFET TO-220 mosfet 2n65 2N65L power mosfet 200A
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-370
2N65
2N65 power mosfet
2n65 MOSFEt
25V 1A power MOSFET TO-220
mosfet 2n65
2N65L
power mosfet 200A
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET TO-220F 1 1 TO-220F1 TO-262 1 1 TO-251 FEATURES * R DS ON = 5.0Ω @ V GS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (C RSS = typical 5.0 pF)
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O-220F
O-220F1
O-262
O-251
O-220
QW-R502-370
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Text: SSD02N65 2A , 650V , RDS ON 8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD02N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSD02N65
O-252
SSD02N65
O-252
24-Nov-2011
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Text: 3VD238650YL 3VD238650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD238650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
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3VD238650YL
3VD238650YL
O-220
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8N65
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices
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IC-PPCN-110605
Jun-29-2011
QR-0205-02
8N65
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2n65 MOSFEt
Abstract: 2N65 3VD238650YL mosfet 2n65
Text: 3VD238650YL 3VD238650YL 高压MOSFET芯片 描述 ¾ 3VD238650YL为采用硅外延工艺制造的N沟道 增强型650V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；
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3VD238650YL
3VD238650YL
3VD238650YLN
650VMOS
O-220
2640m
1980m
X200mY80m
O-251
2n65 MOSFEt
2N65
mosfet 2n65
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230V AC primary to 12V, 1A secondary transformer
Abstract: 230v dc 5a rectifier diode 13003 charger 230V ac to 5V dc usb charger circuit CM 2N65
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2014 - Jan - 26
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ACT334
ACT512
ACT410
ACT411
ACT410/411
ACT413
F/400V
SC053
1000pF/400V
230V AC primary to 12V, 1A secondary transformer
230v dc 5a rectifier diode
13003 charger
230V ac to 5V dc usb charger circuit
CM 2N65
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Automobile Black Box
Abstract: Power Bank Freescale ACT2801 ACT2802 ACT8945A Atmel ACT8865 power management units high power
Text: 3Q 2014 Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4
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ACT2801
ACT2801C
ACT2802
ACT2802B
Automobile Black Box
Power Bank
Freescale
ACT8945A
Atmel
ACT8865
power management units
high power
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13003 charger
Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26
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ACT334
ACT512
ACT410
ACT411
ACT410/411
ACT413
F/400V
SC053
1000pF/400V
13003 charger
230v to 5v circuit using 13003 transistor
121k 1kv capacitor
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230V ac to 5V dc usb charger circuit
Abstract: SAMA5 RK3026 s3c2416 charger pad wide
Text: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4
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ACT2801
ACT2801C
ACT2802
ACT2802C
230V ac to 5V dc usb charger circuit
SAMA5
RK3026
s3c2416
charger pad wide
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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