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    2N6661 TRANSISTOR Search Results

    2N6661 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
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    2N6661 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N6661

    Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-39 Bag
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N6661 580
    • 1 $17.67
    • 10 $15.82
    • 100 $13.7
    • 1000 $13.56
    • 10000 $13.56
    		Buy Now

    2N6661 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N6661

    Abstract: No abstract text available
    Text: 2N6661 90V N-channel Enhancement - Mode Vertical DMOS FET 7.95 Transistors MO. Page 1 of 1 Enter Your Part # Home Part Number: 2N6661 Online Store 2N6661 Diodes 90V N -channel Enhancement - Mode Vertical DMOS FET Transistors Integrated Circuits Optoelectronics


    Original     		2N6661 2N6661 com/2n6661 PDF

    m2017

    Abstract: M1042 2N6661-2 M1051 m2017a 6863-2
    Text: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω


    Original     		2N6661-2 O-205AD 18-Jul-08 m2017 M1042 2N6661-2 M1051 m2017a 6863-2 PDF

    part marking information vishay HD 1

    Abstract: No abstract text available
    Text: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω


    Original     		2N6661-2 2N6661-2 O-205AD 11-Mar-11 part marking information vishay HD 1 PDF

    a0728

    Abstract: No abstract text available
    Text: 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N6661 2N6661 DSPD-3TO39N2, A070808. DSFP-2N6661 A072808 a0728 PDF

    2N2660

    Abstract: No abstract text available
    Text: 2N6660/2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N6660 and 2N6661 are enhancementmode normally-off transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original     		2N6660/2N6661 2N6660 2N6661 DSFP-2N6660 2N6661 A021307 2N2660 PDF

    2N6661

    Abstract: No abstract text available
    Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N6661 2N6661 DSFP-2N6661 C042711 PDF

    to-39 supertex

    Abstract: 125OC 2N6661
    Text: 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N6661 2N6661 DSFP-2N6661 A091008 to-39 supertex 125OC PDF

    2n6660

    Abstract: No abstract text available
    Text: 2N6660 2N6661 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package b v dss/ f*DS ON ' d (ON) b v dgs (max) (min) 60V 3.O il 1.5A 2N6660 90V 4.0Q 1.5A 2N6661 TO-39 Advanced DMOS Technology High Reliability Devices


    OCR Scan     		2N6660 2N6661 300ns PDF

    TO-205AD

    Abstract: 2N6661 VN88AFD
    Text: 2N6661/VN88AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D D D


    Original     		2N6661/VN88AFD 2N6661 VN88AFD 2N6661) P-37655--Rev. 25-Jul-94 TO-205AD 2N6661 VN88AFD PDF

    2N6661-2

    Abstract: M1042
    Text: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω


    Original     		2N6661-2 O-205AD 11-Mar-11 2N6661-2 M1042 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N6661 2N6661 DSFP-2N6661 A101207 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N6661 2N6661 DSFP-2N6661 A101207 PDF

    2N6660

    Abstract: 2N6661 125OC
    Text: 2N6660/2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N6660 and 2N6661 are enhancementmode normally-off transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original     		2N6660/2N6661 2N6660 2N6661 DSFP-2N6660 2N6661 A042507 125OC PDF

    2N6660

    Abstract: 2N6661
    Text: 2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3.0Ω 1.5A 2N6660 90V 4.0Ω 1.5A 2N6661 TO-39 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process


    Original     		2N6660 2N6661 2N6660 2N6661 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure


    Original     		2N6661 2N6661 DSFP-2N6661 C042711 PDF

    125OC

    Abstract: 2N6661
    Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N6661 2N6661 DSFP-2N6661 B032610 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertexinc. 2N 6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss ! Order Number / Package BVnos ^DS ON (max) l[>(ON) (min) 60V 3.on 1.5A 2N6660 90V 4.on 1.5A 2N6661 TO-39 Advanced DMOS Technology


    OCR Scan     		2N6661 2N6660 300ms PDF

    VN88AFD

    Abstract: 2N6661
    Text: 2N6661/VN88AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D


    Original     		2N6661/VN88AFD 2N6661 VN88AFD 2N6661) P-37655--Rev. 25-Jul-94 VN88AFD 2N6661 PDF

    2N6661

    Abstract: VN88AFD
    Text: 2N6661/VN88AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D


    Original     		2N6661/VN88AFD 2N6661 VN88AFD 2N6661) P-37655--Rev. 25-Jul-94 2N6661 VN88AFD PDF

    JANTXV2N6661

    Abstract: JANTX2N6661 JANTXV2N6661P JANTX2N6661 reliability
    Text: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS


    Original     		2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV O-205AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 JANTXV2N6661 JANTX2N6661 JANTXV2N6661P JANTX2N6661 reliability PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 90 RDS(on) () at VGS = 10 V 4 Configuration • Military Qualified • • • • • Single TO-205AD (TO-39) BENEFITS


    Original     		2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV O-205AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    T0220H

    Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046
    Text: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758


    OCR Scan     		2N3824 2N3824LP 2N4391 2H4392 2N4393 2N4416 2N6659 2N6660 2N6661 2N6661-220H- T0220H 2N6795 T018 T046 PDF

    2N666I

    Abstract: No abstract text available
    Text: Tem ic 2N6661/VN88AFD Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) fDS(on) Max (fi) V GS(th) (Y ) I d (A) ï: ; 2N6661 90 4 @ VGs = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGs = 10 V 0.8 to 2.5 1.29 Features Benefits


    OCR Scan     		2N6661/VN88AFD 2N6661 VN88AFD P-37655-- 2N666I PDF

    VN88AFD

    Abstract: N-CHANNEL MOSFET 2N6661
    Text: 2N6661/VN88AFD Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications


    Original     		2N6661/VN88AFD 2N6661 VN88AFD 2N6661) P-37655--Rev. VN88AFD N-CHANNEL MOSFET 2N6661 PDF