Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N6788 Search Results

    SF Impression Pixel

    2N6788 Price and Stock

    Microchip Technology Inc 2N6788

    MOSFET N-CH 100V 6A TO39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N6788 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Microchip Technology Inc JAN2N6788

    MOSFET N-CH 100V 6A TO39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey JAN2N6788 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Microchip Technology Inc JANTX2N6788

    MOSFET N-CH 100V 6A TO39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey JANTX2N6788 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Microchip Technology Inc JANTXV2N6788

    MOSFET N-CH 100V 6A TO205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey JANTXV2N6788 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Microchip Technology Inc JANTX2N6788U

    MOSFET N-CH 100V 4.5A 18ULCC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey JANTX2N6788U Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    2N6788 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6788 International Rectifier TRANS MOSFET N-CH 100V 6A 3TO-205AF Original PDF
    2N6788 International Rectifier 100 Volt, 0.30 Ohm HEXFET Original PDF
    2N6788 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-205AF Original PDF
    2N6788 Semelab N-Channel Power MOSFET Enhancement MODE Original PDF
    2N6788 General Electric N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. Scan PDF
    2N6788 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6788 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    2N6788 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    2N6788 Motorola European Master Selection Guide 1986 Scan PDF
    2N6788 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6788 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6788 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6788 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6788 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6788 Unknown FET Data Book Scan PDF
    2N6788 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6788 Semelab MOS Transistors Scan PDF
    2N6788 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    2N6788L Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    2N6788P Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6788 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFE120

    Abstract: No abstract text available
    Text: 2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8


    Original
    PDF 2N6788LCC4 IRFE120 00A/s IRFE120

    100V 60A Mosfet

    Abstract: 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode
    Text: 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • AVALANCHE ENERGY RATING


    Original
    PDF 2N6788 IRFF120 O-205AF) 100V 60A Mosfet 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode

    Untitled

    Abstract: No abstract text available
    Text: 2N6788 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original
    PDF 2N6788 O205AF) 11-Oct-02

    2N6788

    Abstract: 2n6790
    Text: 2N6788 and 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and


    Original
    PDF 2N6788 2N6790 MIL-PRF-19500/555 2N6790 MIL-PRF-19500/555. T4-LDS-0164,

    2N6788L

    Abstract: No abstract text available
    Text: 2N6788L Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original
    PDF 2N6788L O205AF) 11-Oct-02 2N6788L

    2n6788

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original
    PDF MIL-PRF-19500/555 2N6788 2N6788U 2N3788U T4-LDS-0164 2n6788

    mosfet 2n6788

    Abstract: No abstract text available
    Text: 2N6788U and 2N6790U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788U and 2N6790U devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and


    Original
    PDF 2N6788U 2N6790U MIL-PRF-19500/555 2N6790U 2N6788 2N6790 MIL-PRF-19500/555. T4-LDS-0164-1, mosfet 2n6788

    Untitled

    Abstract: No abstract text available
    Text: 2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8


    Original
    PDF 2N6788LCC4 IRFE120

    Untitled

    Abstract: No abstract text available
    Text: 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • AVALANCHE ENERGY RATING


    Original
    PDF 2N6788 IRFF120 O-205AF)

    mosfet 2n6788

    Abstract: 2N6788 2N6788 JANTX
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original
    PDF MIL-PRF-19500/555 2N6788 2N6788U 2N3788U T4-LDS-0164 mosfet 2n6788 2N6788 2N6788 JANTX

    Untitled

    Abstract: No abstract text available
    Text: 2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8


    Original
    PDF 2N6788LCC4 IRFE120

    Untitled

    Abstract: No abstract text available
    Text: 2N6788+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)


    Original
    PDF 2N6788

    Untitled

    Abstract: No abstract text available
    Text: 2N6788+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)


    Original
    PDF 2N6788

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original
    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 2N6788 JANTX2N6790


    OCR Scan
    PDF JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120

    Untitled

    Abstract: No abstract text available
    Text: •I 43 02 27 1 0 Q S 3 7 b l 35fl ■ HAS 2N6788 Jg HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 6.0 A , 1 0 0V • rD S on = 0 - 3 0 n • S O A is P o w er-D issip atio n Lim ited


    OCR Scan
    PDF 2N6788 T0-205A LH0Q63

    2n6788

    Abstract: 2N6787 S/2N6787
    Text: 2N6787 2N6788 POWER MOSFET TRANSISTORS 100 Volt, 0.30 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Ros»h> and a high transconductance.


    OCR Scan
    PDF 2N6787 2N6788 2N6787 2n6788 S/2N6787

    mosfet 2n6788

    Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
    Text: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan
    PDF 2N6788 2N6788 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ mosfet 2n6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV

    1N7001

    Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
    Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR


    OCR Scan
    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90

    2N7003

    Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
    Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0


    OCR Scan
    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N6759

    2N6788

    Abstract: No abstract text available
    Text: 387 5081 G E SOLID STATE Standard Power MOSFETs D1 _ D E1 | 3875081 00 1 8 4 13 1 2N6788 File Num ber 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL E N H A N C EM EN T M O DE 6 .0 A , 100V


    OCR Scan
    PDF 2N6788 2N6788

    AGT transistor

    Abstract: transistor 2n 456 2N6788 2N678
    Text: 3 3 H A R R 2N6788 I S N -Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T0-205A F BOTTOM VIEW A AA A AA1 I * 0 o.OA, lOOV • rDS on = 0 .3 0 n • S O A is P ow er-D issip atio n Lim ited SOURCE • N anosecond S w itching S peeds


    OCR Scan
    PDF 2N6788 T0-205A LHDD63 AGT transistor transistor 2n 456 2N6788 2N678

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan
    PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


    OCR Scan
    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90