Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N706 TRANSISTOR Search Results

    2N706 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    2N706 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N706

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N706
    • 1 -
    • 10 -
    • 100 $85.63
    • 1000 $85.63
    • 10000 $85.63
    		Buy Now

    2N706 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N706

    Abstract: No abstract text available
    Text: 2N706 NPN High Speed Logic Switch. 4.87 Transistors Bipolar Silicon NPN Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N706 Online Store 2N706 Diodes NPN High Speed Logic Switch. Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N706 2N706 format00m O-206AA com/2n706 PDF

    2n706 transistor

    Abstract: 2N706 transistor 2n706
    Text: MIL-S-19500/120C amendment 3 10 M a y 1976 SUPERSEDING AMENDMENT 2 7 August 197*» MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LOW-POWER TYPE 2N706 This amendment forms a part of Military Specification MIL-S-19500/12QC,


    OCR Scan     		L-S-19500/120C 2N706 MlL-S-19500/120C, MiL-S-13ience 2n706 transistor 2N706 transistor 2n706 PDF

    2n706 transistor

    Abstract: 2N706 transistor 2n706 transistor #2N706
    Text: 4 ^ Nicht für Neuentwicklungen Not for new developments 2N706 'W Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: Schnelle Schalter Applications: Fast switches Abmessungen in mm Dimensions in mm


    OCR Scan     		2N706 2n706 transistor 2N706 transistor 2n706 transistor #2N706 PDF

    ILS 404 CB

    Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
    Text: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.


    OCR Scan     		MIL-S-19500/120C MIL-S-19500/120B 2N706 MIL-S-19500 ILS 404 CB 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706 PDF

    mwab

    Abstract: 2N706 transistor 2n706 2n706 transistor mwab 3.3
    Text: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.


    OCR Scan     		MIL-S-19500/120C MIL-S-19500/120B 2N706 MJL-S-19900; MIL-S-19500 mwab 2N706 transistor 2n706 2n706 transistor mwab 3.3 PDF

    2n706 transistor

    Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l


    OCR Scan     		T0206AA 2N706 2N708 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA 2N2222 2n706 transistor transistor 2n706 2N2222AA 2n2222 jan 03150 transistor transistor 2N2222 PDF

    2n4276

    Abstract: No abstract text available
    Text: N PN Transistors saturated switches Type No Case Sty •• V CIIO V, M,n V CEO 2N706 TO•18 25 15 2N708 TO·18 40 15 20 12 2N744 TO·18 2N753 TO·18 25 2NB34 TO·18 40 2N2369 TO·18 40 15 2N2369A TO·18 40 15 JAN2N2369A TO·18 40 15 JANTX2N2369A TO·18 40


    Original     		2N706 2N708 2N744 2N753 2NB34 2N2369 2N2369A JAN2N2369A 10IJA MPS2714 2n4276 PDF

    2n3052

    Abstract: 2n706 transistor 2N744 2n708 Transistor 2N708
    Text: TYPE 2N3052 DUAL N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 7 4 2 3 6 , A U G U S T 1 9 6 3 - R E V I S E D A P R IL Î 9 6 7 DESIGNED FOR MINIATURIZED APPLICATIONS REQUIRING DEVICES SIMILAR TO 2N706, 2N708, 2N744, 2N753, 2N834, 2N914, ETC. •


    OCR Scan     		2N3052 2N706, 2N708, 2N744, 2N753, 2N834, 2N914, 2n706 transistor 2N744 2n708 Transistor 2N708 PDF

    2N706

    Abstract: 2N706A J 2N706 2N706AB 2N706B 2N706 JAN 2N2368
    Text: MOTOROLA SC XSTRS/R F D | b3b72SM OOflbait. 1 | M A X IM U M R A T IN G S R ating Collector-Em itter V olta g e 2N 706A,B C ollector-E m itter Voltag eO C o llector-Base V olta g e Em itter-Base V olta g e 2N706 2N 706A 2N706B C o llector Current 2N706AB


    OCR Scan     		2n706a 2n706 2n706b 2n706ab 2N706B 10Vdc J 2N706 2N706 JAN 2N2368 PDF

    2n706

    Abstract: SCHEMA 2n 706
    Text: 2N 706 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILIC IU M , PLANAR - Small signal amplification A m plifica tio n p etits signaux - Low current fast switching 25 V VCBO Commutation rapide faible courant ^21E mA h Maximum power dissipation Case TO-18


    OCR Scan     		PDF

    2n2222 itt

    Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
    Text: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51


    OCR Scan     		VCBOUPtOl20V. 750mA. 800mW BSY51 BSY54 BSY55 BSY56 BSY87 BSY88 BSY90 2n2222 itt 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711 PDF

    TI555

    Abstract: tis49 TIS52 2s325 2s321 a2s303 2S512 2N914 2N2368 TI546
    Text: Silicon Transistors C ase Type c o ~ a M a x im u m R a tin g s a t2 5 ° C am b. C h a ra c te ris tic s S P E C IA L P No. FEATURES » C O « o w h FE ' *T M in . V CB V CE V EB C V V V A P.O, W mA V CE(SA T A >t M ax. M in . mA M c /s Max. 'c mA


    OCR Scan     		2N706 2N706A 115nS 2N708 2N743 2N744 2N753 2S3040 2S3210 2S3220 TI555 tis49 TIS52 2s325 2s321 a2s303 2S512 2N914 2N2368 TI546 PDF

    P348A

    Abstract: BFR37 SGS transistor C740 sgs-ates BFY75 2n2388 19142e C720 2N2219 transistor BFW68
    Text: S G S -A T E S Semiconductors Transistors -N P N NPN Small Signal Transistors— continued REFERENCE TABLE Max P tot @ T ams—25*C LVceo lc Range @ lc Max mA (mA) NF (dB) Code (W) (V) h FE — BFR37 0.25 80-250 10 30 0.5-50 10 5Í8 750 BFW68 0.36 40 01-50


    OCR Scan     		BFR37 BFW68 30792F BFX18 19041D BFX31 BFY74 19068D BFY75 30795X P348A BFR37 SGS transistor C740 sgs-ates 2n2388 19142e C720 2N2219 transistor PDF

    2N697 equivalent

    Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
    Text: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10


    OCR Scan     		BFX30 N2904A BFX37 2N2605* BFX65 BFX84 2N1711 BFX85 2N171-1 2N697 equivalent 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 DH3467CD BFY39 BFY50 equivalent PDF

    2n706 transistor

    Abstract: transistor 2n706 2n2222 jan 2N706 2N706 JAN
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 ^C E O PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS @ IC/ ^ C E min/max @ mA/V hpE VcE(jat) @ It/Iß v@ mA/mA TO-18 T0206AA < i\ C<p P (MHz) ÌT 20@ 10/1 0.6@10/1 6 200 30-120@10/l 0.4@10/1 6 300


    OCR Scan     		T0206AA 2N706 2N708 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA 2N2222 2n706 transistor transistor 2n706 2n2222 jan 2N706 JAN PDF

    2N3725

    Abstract: No abstract text available
    Text: NATL SEfllCOND DISCRETE 22E D • t.SG113Q QG377ÖQ 2 ■ NPN Switching Transistors by Ascending Vceo Vceo (V) Min VCbo (V) Min . Vce(sat) (V) Max @ Ic/lb (niA) Cob (pF) Max Ft (MHz) Max *(otf) (ns) Max MMBT5134 PN5134 10 10 20 20 0.25 0.25 10/1.0 10/1.0


    OCR Scan     		SG113Q QG377 MMBT5134 PN5134 2N5224 BSV52 MMBT4274 MMBT5224 PN4274 BSX39 2N3725 PDF

    2N502

    Abstract: 2N2410
    Text: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING V C E 0 METAL PACKAGE (FOR MEDIUM SPEED — SEE GENERAL PURPOSE Continued V CEO V CE(sat) hFE (VCER )


    OCR Scan     		2N835 2N2847 2N2848 2N2476 2N2477 2N706 2N1252 2N1253 2N2845 2N2846 2N502 2N2410 PDF

    BSY87

    Abstract: BSY90 1133B 1128G 2n2388 1136G BSY56 BSY51 BSY54 BSY55
    Text: ITT Sem iconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h ara cte ristics @ M ax . rating«


    OCR Scan     		VCBOUPtOl20V. 750mA. 800mW BSY51 BSY54 BSY55 BSY56 BSY87 BSY88 BSY90 BSY87 BSY90 1133B 1128G 2n2388 1136G BSY56 BSY51 BSY54 BSY55 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25*C, Unless Otherwise Specified) Maximum Ratings Type No. 2N2483 V CBO ^CEO V EBO M Min (V) Min IV) Min 60 60 6 Pc (W) 'c (A) ^CM 'cao (A) (pA) ^C6 (V) 0.36 0.05 0.01 ^CE e (V) Max


    OCR Scan     		2N2483 2N720 2N720A 2N834 2N910 2N911 PDF

    P346A

    Abstract: ME8003 SGS C407 BSX20 2n2222a ME9002 BFR37 sgs-ates transistors C760 P348A BSX19
    Text: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors R EFER EN C E T A B L E << o sat @ lc mA 10 10 0.25 0.25 200 10 0.35 10 40 60 10 0.5 120 150 200 10 10 10 0.25 0.25 12 40 30 25 0.25 10 1 12 20 - 50 0.3 10 BSX19 BSX20 40 40 15 20


    OCR Scan     		BSX19 19552B BSX20 19553X BSY95A 19572G 19573C ME9001 19331F ME9002 P346A ME8003 SGS C407 BSX20 2n2222a BFR37 sgs-ates transistors C760 P348A PDF

    motorola 2N2270

    Abstract: 2N5861 MOTOROLA
    Text: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:


    OCR Scan     		2N656 2N657 2N697 2N706 2N708 2N718 2N718A 2N869A 2N914 2N916 motorola 2N2270 2N5861 MOTOROLA PDF

    2N3907

    Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)


    Original     		2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252 PDF

    BC118

    Abstract: transistor BC118 BFR37 SGS 2n2388 2N706 BC125 BC537 fairchild to-106 fairchild semiconductors BC537-10
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N General Purpose Am plifier and Sw itching Transistors P la stic P a ck a g e TO 92, T O 105, TO 106 REFEREN CE T A B L E S e e a ls o lo w level and hig h v o ltag e s e ctio n .


    OCR Scan     		BC118 35273E BC125 35274C BC537 5275A BC537-6 3S276X BC537-10 35277H transistor BC118 BFR37 SGS 2n2388 2N706 fairchild to-106 fairchild semiconductors PDF

    BC117

    Abstract: T0105 BFR37 C111E 2N2368 2n2388 BFR37 SGS 2N5831 2n918 plastic SGS-ATES
    Text: Sem iconductors Fairchild Sem iconductors Silicon Small Signal Transistors N P N H igh Voltage Amplifier Transistors P la s t ic P a c k a g e T 0 9 2 , T 0 1 0 5 REFERENCE T A B L E C H A R A C T E R I S T IC S @ 25‘C M A X R A T IN G S C ode V CEO Volts


    OCR Scan     		T0105) BC117 35317B 2N5830 35318X 2N5831 35319R 2N918 19143C 2N930 T0105 BFR37 C111E 2N2368 2n2388 BFR37 SGS 2n918 plastic SGS-ATES PDF