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    2N7270 MOSFET Search Results

    2N7270 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    2N7270 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N7268

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2013. MIL-PRF-19500/603J 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		MIL-PRF-19500/603J MIL-PRF-19500/603H 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, 2N7394U, 2N7268 PDF

    2N7269

    Abstract: 2N7394 2N7270 2N7268 2N7269u 2N7270 mosfet 2N7268U 2N7394U marking IRH
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 July 2006. MIL-PRF-19500/603G 10 April 2006 SUPERSEDING MIL-PRF-19500/603F 10 November 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		MIL-PRF-19500/603G MIL-PRF-19500/603F 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, 2N7394U, 2N7269 2N7394 2N7270 2N7268 2N7269u 2N7270 mosfet 2N7268U 2N7394U marking IRH PDF

    IRHM8450

    Abstract: 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270
    Text: PD - 90673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage


    Original     		0673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 500Volt, 1x106 IRHM8450 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270 PDF

    2N7270

    Abstract: SCA2N7270
    Text: PRELIMINARY MOSFET SE M SC ICO A2 N7 A 270 Radiation Hardness Assurance SCA2N7270 N-Channel Power MOSFET DESCRIPTION Semicoa’s Radiation Hardened MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications.


    Original     		SCA2N7270 MIL-STD-750, MIL-PRF-19500 2N7270 PDF

    IRHC7260SE

    Abstract: JANKCAR2N7389
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 April 2011. INCH-POUND MIL-PRF-19500/657B 26 January 2011 SUPERSEDING MIL-PRF-19500/657A 22 February 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE,


    Original     		MIL-PRF-19500/657B MIL-PRF-19500/657A MIL-PRF-19500. IRHC7260SE JANKCAR2N7389 PDF

    JANKCAR2N7389

    Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
    Text: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments


    Original     		MIL-PRF-19500/657A MIL-PRF-19500/657 MIL-PRF-19500. JANKCAR2N7389 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389 PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 RADIATION HARDENED N-CHANNEL MOSFET


    Original     		MIL-PRF-19500/603 2N7394 2N7394U O-276AC 2N7268U, 2N7269U, 2N7270U, 2N7394U) T4-LDS-0189 PDF

    TD 422 BL

    Abstract: MA-01841 2N7394 SI 6822 TO-276AC
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 RADIATION HARDENED N-CHANNEL MOSFET


    Original     		MIL-PRF-19500/603 2N7394 2N7394U O-276AC 2N7268U, 2N7269U, 2N7270U, 2N7394U) T4-LDS-0189 TD 422 BL MA-01841 2N7394 SI 6822 TO-276AC PDF

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


    Original     		PDF

    2n7270

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.673B I i« r | INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRHM7450 IRHM8450 N-CHANNEL 2N727Q JANSR2N727Ü JANSH2N7270 _MEGA RAD HARD 500 Volt, 0.45Q, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs


    OCR Scan     		IRHM7450 IRHM8450 2N727Q JANSR2N727Ü JANSH2N7270 1x105 1X106 IRHM7450D IRHM7450U O-254 2n7270 PDF

    2N7270

    Abstract: diode t3d 44 s452 IRHM7450 IRHM8450 JANSH2N7270 H257 T3D 71 diode DIODE S3H Diode T3D 41 CIRCUIT
    Text: Data Sheet No. PD-9.673B INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRHM7450 IRHM8450 N-CHANNEL 2N727G JANSRSN7S70 JANSHSN7S70 _ MEGA RAP HARD 500 Volt, 0.45Î2, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs


    OCR Scan     		IRHM7450 IRHM8450 2N7270 JANSRSN7S70 JANSH2N7270 1x106 1x105 IRHM74500 IRHM7450U diode t3d 44 s452 H257 T3D 71 diode DIODE S3H Diode T3D 41 CIRCUIT PDF

    SHOCK+SENSOR+083

    Abstract: No abstract text available
    Text: International Government and Space llËSRectifier HEXFET Power MOSFETs Radiation Hardened N & P Channel 3 Part Number * bvDSS (V) R DS(on) (Ohms) >D@ TC = 100°C R thJC Max. P|J@ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) IRH7054 60 0.025 45 32 0.83


    OCR Scan     		IRH7054 IRH8054 IRH7130 IRH8130 IRH7150 IRH8150 IRH7230 IRH8230 IRH7250 IRH8250 SHOCK+SENSOR+083 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF