2N918 JAN
Abstract: 2N918 2N918 JANTXV 2n918 transistor
Text: Data Sheet No. 2N918 Generic Part Number: 2N918 Type 2N918 Geometry 0013 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/301 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-72 case. • Also available in chip form using
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2N918
MIL-PRF-19500/301
MIL-PRF-19500/301
2N918 JAN
2N918
2N918 JANTXV
2n918 transistor
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2n918
Abstract: 2n918 transistor
Text: 2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS IC 50 mA VCE 15 V O 300 mW @ TC = 25 C PDISS O 200 mW @ TC = 25 C O O O O
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2N918
2N918
2n918 transistor
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2N918
Abstract: 2n918 transistor transistor TO-72 MARKING CODE N for RF transistor
Text: 2N918 NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications.
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2N918
300ess
100MHz
500MHz
200MHz
60kHz
11-September
2n918 transistor
transistor TO-72
MARKING CODE N for RF transistor
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Untitled
Abstract: No abstract text available
Text: 2N918 asi NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS lc 50 mA V ce 15 V P diss 300 mW @ Tc = 25 °C P diss 200 mW @ TA = 25 °C Tj -65 °C to +200 °C
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2N918
2N918
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Untitled
Abstract: No abstract text available
Text: 2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS 5O mA Ie o m < 15 V p d is s 3OO mW @ Te & 25 0C p d is s 2OO mW @ Ta & 25 0C
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2N918
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2N918
Abstract: 2N918 thermal resistance 2N918 oscillator
Text: 2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS DESCRIPTION The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns.
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2N918
2N918
2N918 thermal resistance
2N918 oscillator
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2N918
Abstract: 1B73
Text: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS D E S C R IP T IO N The 2N918 is a silicon planar epitaxial NPN transis tors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz,
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2N918
2N918
1B73
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2n918 transistor
Abstract: 2N918 2N918A IEC134
Text: N AMER PHILIPS/DISCRETE 5SE D • ^53=131 □□lflESl S ■ 2N918 Jl T " 3 1- I S' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in TO-72 metal envelope with insulated electrodes and a shield lead connected to the case. The 2N918 is primarily intended for low power amplifiers and oscillators in the v.h.f. and u.h.f.
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2N918
T-31-15
2n918 transistor
2N918A
IEC134
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2N918
Abstract: 2n918 data sheet 2n918 die sd91 2C918 chip type geometry
Text: Data Sheet No. 2C918 Generic Packaged Parts: Chip Type 2C918 Geometry 0013 Polarity NPN 2N918 Chip type 2C918 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high frequency oscillator, multiplier and driver
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2C918
2N918
2C918
2N918,
2N918UB,
SD918,
SD918F,
SQ918,
SQ918F
2N918
2n918 data sheet
2n918 die
sd91
chip type geometry
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UHF UHF Transistors
Abstract: 2N3839
Text: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB hFE V (V) (V) µA) (µ MIN MIN MIN MAX RF/IF OSCILLATOR 30 15 3.0 0.001 2N917A RF/IF OSCILLATOR 30 15 3.0 - 2N918 RF/IF OSCILLATOR 30 15 3.0 0.01 2N998 DARLINGTON 100
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2N917
2N917A
2N918
2N998
2N2857
2N2865
2N34780
UHF UHF Transistors
2N3839
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package NPN TRANSISTORS, BEST SUITED FOR LOW NOISE VHF AND VHF AMPLIFIER MIXER AND OSCILLATOR APPLICATIONS.
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2N918
C-120
2N918Rev270701
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2N918 JAN
Abstract: 2n918 die
Text: 2N918 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N918J • JANTX level (2N918JX)
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2N918
MIL-PRF-19500
2N918J)
2N918JX)
2N918JV)
2N918JS)
2N918JSR)
2N918JSF)
MIL-STD-750
2N918 JAN
2n918 die
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2N918 pin configuration
Abstract: Transistor 2N918 2N918 2n918 continental devices india limited 2N918 CONTINENTAL DEVICE INDIA LIMITED 48-DEG
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package NPN TRANSISTORS, BEST SUITED FOR LOW NOISE VHF AND VHF AMPLIFIER MIXER AND OSCILLATOR APPLICATIONS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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ISO/TS16949
2N918
C-120
2N918Rev270701
2N918 pin configuration
Transistor 2N918
2N918
2n918 continental devices india limited
2N918 CONTINENTAL DEVICE INDIA LIMITED
48-DEG
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NPN 200 VOLTS POWER TRANSISTOR
Abstract: 2N918 2N918 JANTX 2n918 die SEMICOA SEMICONDUCTORS npn transistor data
Text: 2N918 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N918J • JANTX level (2N918JX)
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2N918
MIL-PRF-19500
2N918J)
2N918JX)
2N918JV)
MIL-STD-750
MIL-PRF-19500/301
NPN 200 VOLTS POWER TRANSISTOR
2N918
2N918 JANTX
2n918 die
SEMICOA SEMICONDUCTORS
npn transistor data
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UHF UHF Transistors
Abstract: 2n3478 2n918 low noise transistors vhf PNP UHF transistor UHF pnp transistor 2N917 2N2857 2n918 data sheet 2N918 DATASHEET
Text: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB hFE V (V) (V) µA) (µ MIN MIN MIN MAX RF/IF OSCILLATOR 30 15 3.0 0.001 2N917A RF/IF OSCILLATOR 30 15 3.0 - 2N918 RF/IF OSCILLATOR 30 15 3.0 0.01 2N998 DARLINGTON 100
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2N917A
2N918
2N998
2N2857
2N2865
2N3478
2N3839
2N5179
BFY90
2N917
UHF UHF Transistors
2n3478
2n918
low noise transistors vhf
PNP UHF transistor
UHF pnp transistor
2N917
2N2857
2n918 data sheet
2N918 DATASHEET
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2N918
Abstract: 2N91 2n918 die
Text: • JAN level 2N918J • JANTX level (2N918JX) 2N918 • JANTXV level (2N918JV) Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E
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2N918J)
2N918JX)
2N918JV)
2N918
MIL-PRF-19500
MIL-STD-750
MIL-PRF-19500/301
2N918
2N91
2n918 die
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2N918 JAN
Abstract: 2N918UB 10VDC 2N918 oscillator 60mhz
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/301 DEVICES LEVELS 2N918 2N918UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/301
2N918
2N918UB
100kHz
10Vdc,
60MHz
200MHz
500MHz
2N918 JAN
2N918UB
10VDC
2N918
oscillator 60mhz
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2n3600
Abstract: 2N918 sy 171 BFX73 19S8 BFX73-2N918 G2053
Text: „ S C S -T H O M S O N B FX 73-2N 918 fc7 # 2 N 3 6 0 0 S G S - T H 0MS0N HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS The BFX73, 2N918 and 2N3600 are silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. They are designed for low-noise VHF amplifiers, os
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OQBCHfl11)
BFX73-2N918
2N3600
BFX73,
2N918
2N3600
G-20SJ
G-2053
2e1237
BFX73-2N918-2N3600
sy 171
BFX73
19S8
BFX73-2N918
G2053
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2N918
Abstract: 2n3600 2CU8 BFX73
Text: 3GE D • TSSTSB? DDaQ^fl11 4 ■ S G S -T H O M S O N U L IO T « ! "T-'SMS B F X 7 3 -2 N 9 1 8 2N 3600 S G S-THOMSON HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS The BFX73, 2N918 and 2N3600 are silicon planar epitaxial NPN transistors in Jedec TO-72 metal
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BFX73,
2N918
2N3600
T-31-15
73-2N
918-2N
2CU8
BFX73
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Untitled
Abstract: No abstract text available
Text: TYPE 2N918 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 7 3 1 1 9 8 9 , M A R C H 1 9 7 3 FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS • Low Noise Figure . . . 6 dB max at 60 MHz • High Neutralized Power Gain . . . 15 dB min at 200 MHz
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2N918
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2N918
Abstract: 2N3600 G2053 2N918 thermal resistance 2n 918 2N360
Text: 2N918 2N 3600 SILICON PLANAR NPN HIG H-FREQUENCY OSCILLATORS AND AM PLIFIERS The 2N 918 and 2N 3600 are silicon planar epitaxial NPN transistors in Jedec T O -7 2 metal case. They are designed fo r low-nciise VH F amplifiers, oscillators up to 1 GHz, non-neutralized IF am plifiers and non-saturating circuits w ith rise and fall times o f less than 2.5 ns.
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2N918
G-2052
G-2049
G-2053
2N3600
G2053
2N918 thermal resistance
2n 918
2N360
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SE-5023
Abstract: SE5050 2N918 JAN TO-72 SE5055 2N918 2N3137 2n918jan J 2N918 SE8010
Text: TRANSISTORS—SMALL SIGNAL NPN RF—IF AMPLIFIER A N D OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY METAL PACKAGE P.G. V CEO h NF Cob PD (OSC. Po) dB @ f dB @ VOLTS MHz pF MIN MIN MAX 9.0 0.5 6.0 @ MAX MHz TYPE MIN SE8010 SE5023 10.8 @ 27 60 22.5 @ 45 20
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SE8010
SE5023
SE5024
SE5055
2N707
SE5050
SE5051
2N917
2N918
SE5052
SE-5023
2N918 JAN
TO-72
2N3137
2n918jan
J 2N918
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2N918
Abstract: 2N917 schema GP 300
Text: 2N 917 *2 N 918 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLAN A R E P IT A X IA U X H* Preferred device D is p o s itif recommandé • VH F amplification small signal A m p lifica tio n VHF petits signaux - Mixerand oscillator applications
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2N917
2N918
schema GP 300
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9033 transistor
Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431
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302N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
9033 transistor
PT8828
2N4932
PT8740
BLW27
BLX66
sd1315
BLY94
MM1669
PT8811
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