2N1711 MOTOROLA
Abstract: 2n1711 2N956 2N956 MOTOROLA 2n718a
Text: 2N718A 2N956 M A X IM U M R ATIN G S Rating Symbol 2N718A 2N956 2N1711 Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation a T ^ = 25°C Derate above 25°C PD Total Device Dissipation
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OCR Scan
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2N718A
2N956
2N1711
2N1711
T0-205AD)
ReferN1711
2N718A,
2N956,
2N1711 MOTOROLA
2N956
2N956 MOTOROLA
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2N1711
Abstract: 2N1711 MOTOROLA 2N956 2N956 MOTOROLA 2N3019 2N718 2N718A
Text: 2N718A 2N956 M AXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N718A 2N956 2N1711 VCER 50 Vdc Collector-Base Voltage v CBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ Tc = Derate above 25°C
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OCR Scan
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2N718A
2N956
2N1711
2N956
2N1711
O-206AA)
2N1711 MOTOROLA
2N956 MOTOROLA
2N3019
2N718
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2n1132
Abstract: No abstract text available
Text: 2N956 For Specifications, See 2N718A Data. MAXIMUM RATINGS _ Rating Symbol 2N1132 2N1132A U nit Collector-Emitter Voltage VcEO 35 40 Vdc Collector-Emitter Voltage Rbe « 10 Ohms VCER <-5 0 - ► Vdo Collector-Base Voltage VcBO 50 60 Vdc
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OCR Scan
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2N956
2N718A
2N1132
2N1132A
2N1132,
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motorola 2N2270
Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
Text: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.
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OCR Scan
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h3b7E54
007b70E
2N2896
2N3700#
2N2895
2N956
2N2897
2N718
2N2221A#
2N2222AI
motorola 2N2270
2N3947
2N956 MOTOROLA
JAN 2N2896
transistor motorola 2n3053
motorola 2N2270 to-18
mm3904
motorola 2N2219
2N4028
MM6427
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motorola 2N2270
Abstract: 2N5861 MOTOROLA
Text: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:
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OCR Scan
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2N656
2N657
2N697
2N706
2N708
2N718
2N718A
2N869A
2N914
2N916
motorola 2N2270
2N5861 MOTOROLA
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2n2846
Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
Text: 34 M O T O R O L A SC -CDIODES/OPTO} 1 D • t,3fc,7S55 0 0 3 7 ^ 7 4 34C 37974 7"-3r- /S SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A — DIE NO. NPN LINE SOURCE — DMB101 This die provides performance similar to that of the following device types:
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OCR Scan
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DMB101
2C2222A
2N696*
2N697
2N731
2N956
2N1420*
2N1613
2N1711
2N1959*
2n2846
2N3015
2n2224
MOTOROLA 2n2218 TRANSISTOR
2n2848
2N2222A motorola
MPS8092
2N4401 die
2n3116
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BC352* CSR
Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index
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MPS5142
MPS5143
2N998
2N3677
2N2411
2N1991
PN5143
2N5143
2N2802
2N2803
BC352* CSR
csr BC352
2N936
Emihus
2N828
Bc352
LOW-POWER SILICON PNP
2N850
transitron
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2N907 PNP
Abstract: 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP
Text: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178
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2N2165
2N2166
2N2162
2N2163
2N2167
2N2164
2N1676
2N1677
2N2002
2N2003
2N907 PNP
2N1429
transitron
Emihus
2N2425
2N2424
2N828
2N850
2N907
LOW-POWER SILICON PNP
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2N904
Abstract: 2N929 texas 2N906 2N905 Emihus 2N828 2N843 2N928 2N850 LOW-POWER SILICON NPN
Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475
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2N997
2SC982TM
MMBT100
MMBT200
MMBT3642
MPSS545
BC817
2N904
2N929 texas
2N906
2N905
Emihus
2N828
2N843
2N928
2N850
LOW-POWER SILICON NPN
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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PDF
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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PDF
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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PDF
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MPS5771
Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage
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MPS3640
226AA)
U218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MPS5771
MPS8093
bf391
2n3819 replacement
MPS3640 equivalent
MPF3821
MPS6595
MAD130P
BC108 characteristic
2n3819 equivalent ic
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PDF
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BC237
Abstract: TRANSISTOR bc177b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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Original
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BAW156LT1
BAW156LT3
inch/10
BAW156LT1
236AB)
Junc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
TRANSISTOR bc177b
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MPS6520 equivalent
Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage
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MPSW01
MPSW01A*
MPSW01A
226AE)
Junc218A
MSC1621T1
MSC2404
MPS6520 equivalent
BC237
transistor Vbe 2n2222
Characteristic curve BC107
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor MPSH17 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15
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MPSH17
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE
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Original
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MGSF1N03LT1
Sur218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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PDF
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MPS2369 equivalent
Abstract: BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS2369 MPS2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage
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Original
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MPS2369
MPS2369A*
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MPS2369 equivalent
BC237
2N5551 circuit
2N2369A MOTOROLA
t1 bc140
BS107 "direct replacement"
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PDF
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motorola p1f
Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for
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OT-223
PZT2907AT1
PZT2222AT1
inch/1000
PZT2222AT3
inch/4000
unit218A
MSC1621T1
motorola p1f
hie for bc547b
BC237
transistor motorola 2n3053
Marking P1F
619 sc-59
P1F marking
MARKING CODE Zi sot363
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