2N5881
Abstract: 2N5882 2NS882
Text: tz.li S O L I T R O N D E V I C E S INC DE 1fl3t,flbDa 0 0 0 1 3 S 1 5 1 ~ 2N5881 2N5882 8368602 SOLITRON D EVICES t' « INC . v * UPU SILICON POWER TRANSISTORS HIGH POWER 15 AMPERES FEATURES: EPI-BA SE CONSTRUCTION F A S T SWITCHING HIGH R E L IA B IL IT Y
|
OCR Scan
|
2N5881
2N5882
2N5881
100KHZ
2N5882
2NS882
|
PDF
|
PNP 2SD
Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK AGE 2N 3054 2N 3055
|
OCR Scan
|
2N3054
2N3055
2N3055SD
2N3439
2N3440
2N3713
2N3714
2N3715
2N3716
2N3740
PNP 2SD
T1P61
BD224
|
PDF
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
|
PDF
|
2N5881
Abstract: 2n5882
Text: TYPES 2N5881, 2N5882 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS • 160 Watts at 2 5 °C Case Temperature • 15-A Rated Continuous Collector Current • Min f r of 4 MHz at 10 V , 1 A • 90-mJ Reverse Energy Rating TYPES 2N5881, 2N5882 BULLETIN NO. DL-S 7111625, DECEMBER
|
OCR Scan
|
2N5881,
2N5882
2N5880
90-mJ
2NS881
2N5881
|
PDF
|
2SD5703
Abstract: 2sd 209 l 2N6883 638s IC 638S T1P61 BD223 CX704 2n6125
Text: T- SEMICONDUCTORS INC OTE S | 813tUS0 0 D M 2 6 2 4 | S3 -fi Power Transistors •c D E V IC E M ax v CEO M ax A v hF E M in /M a x ?f l ç P O L A R IT Y v C E (sa t M ax fti Iq »T M in p D (M ax) T C =25°C W A V A M Hi PACK AGE 2N3054 2N3055 2N3055SD
|
OCR Scan
|
813tUS0
O-48D
2SD5703
2sd 209 l
2N6883
638s
IC 638S
T1P61
BD223
CX704
2n6125
|
PDF
|