w34 transistor
Abstract: No abstract text available
Text: EO PLASTIC T-1% PAIR OPTOELECTRONICS QPD1223 PACKAGE DIMENSIONS 205 5.21 185 (4.70) REFERENCE SURFACE REFERENCE SURFACE COLLECTOR .100 (2.54) NOM .025 (.640) .015 (.380) SQ NOM 2P LC S .025 (.640) .015 (.380) SQ NOM ' 2P LC S INFRARED LED PHOTOTRANSISTOR
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QPD1223
ST2169
w34 transistor
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DS199
Abstract: No abstract text available
Text: FMMT2222 FMMT2222A S0T23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 - 1B FMMT2222A - 1P FMMT2222R - 2P FMMT2222AR - 3P ABSOLUTE MAXIMUM RATINGS SY M B O L PAR AM ETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage
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S0T23
FMMT2222
FMMT2222A
FMMT2222R
FMMT2222AR
FMMT2222
FMMT2222A
140KHz
DS199
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs
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MTSF2P02HD/D
2PHX43416-0
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EHP00
Abstract: marking 2P
Text: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings
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Q68000-A8330
OT-89
EHP00
marking 2P
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTSF2P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs
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MTSF2P03HD/D
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PDF
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npn 2222 transistor
Abstract: 2222 NPN Transistor 2222 npn 2222 Q68000-A8330
Text: NPN Silicon Switching Transistor SXT 2222 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings
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Q68000-A8330
OT-89
npn 2222 transistor
2222 NPN
Transistor 2222
npn 2222
Q68000-A8330
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PDF
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74LS24
Abstract: No abstract text available
Text: MITSUBISHI LSTTLs M 74LS242P QUADRUPLE BUS TRANSCEIVER W ITH 3-STATE OUTPUT INVERTED DESCRIPTION The M 74L S 24 2P is a semiconductor integrated circuit PIN CONFIGURATION (TOP VIEW) containing 4 bus transmitters/receivers circuit w ith 3-state inverted outputs.
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74LS242P
--15m
b2LHfl27
0013Sbl
14-PIN
16-PIN
20-PIN
74LS24
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ASEA motor
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs
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TSF2P02HD/D
ASEA motor
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PDF
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6 pin TRANSISTOR SMD CODE PA
Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol
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BUZ22SMD
q67042-s4139
DsJ14
6 pin TRANSISTOR SMD CODE PA
BUZ22
smd code buz
smd rgs
BUZ22 SMD
BUZ22SMD
Diode smd code sm
PH smd transistor PH
smd transistor A7J
TRANSISTOR SMD XD
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MJ10005
Abstract: MJ10004 ie 10a MJ10004PFI TO218 20A Darlington S537 MJ-10004
Text: • QDE^Ob^ 1 ■ SCS-THOMSON S ^ T zZ3>-'2P\ _ _ M J10004/4P /4PFI M J10005/5P/5PFI G S-THOMSON 3DE D ' EPITAXIAL PLANAR NPN DESC RIPTIO N The MJ10004/5, MJ10004P/5P and MJ10004PFI/ 5PFI are silicon epitaxial planar NPN transistors in monolithic Darlington configuration with integrated
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J10004/4P/4PFI
MJ10005/5P/5PFI
MJ10004/5,
MJ10004P/5P
MJ10004PFI/
O-218
ISOWATT218
MJ10004/4P/4PFI
400mA
MJ10005
MJ10004
ie 10a
MJ10004PFI
TO218 20A Darlington
S537
MJ-10004
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PDF
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JS301
Abstract: transistor 2222a sot 89 Q68000-A8330 2222A PMDC transistor marking code 7C transistor 2222a SXT2222A
Text: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel P in t tonfigu ation 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E
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VPS05162
Q68000-A8330
OT-89
53SbGS
EHP00890
BE35LÃ
JS301
transistor 2222a sot 89
2222A
PMDC
transistor marking code 7C
transistor 2222a
SXT2222A
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DITTO
Abstract: MIP103 2pg301 Power Switch 45V MIP111 MIP108 2PG302 2PG351 MIP107 MIP105
Text: Field Effect Transistors • IGBT Absolute Maxim um Ratings Application Strobo Type No. Electrical Characteristics VcES lc lc peak V ce (sat) (V) (A) (A) (V) td (on) td (off) tf (ns) (ns) (ns) 2P G 301 400 20 130 < 2.25 20 25 250 2 N T ype D47 2PG 302 400
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2PG301
2PG302
2PG351
MIP103
500kHz
MIP105
HSOP-24D
MIP111
750kHz
DITTO
Power Switch 45V
MIP108
MIP107
MIP105
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"Intelligent Power Device"
Abstract: No abstract text available
Text: Field Effect Transistors • IGBT Absolute M axim um Ratings Application Strobo Type No. Electrical Characteristics V ces lc lc peak V ce (sat) (V) (A) (A) (V) lc (mA) 2P G 301 400 20 130 <2.25 2PG 302 400 5 130 2PG 351 400 5 130 td (on) td (off) tf (ns)
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500kHz
380mA
750kHz
HSOP-24D
800kHz
OP-28D
IP161
100kHz
O-220
"Intelligent Power Device"
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PDF
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IRFG6110
Abstract: JANTX2N7336 JANTXV2N7336 MO-036AB 90436
Text: PD - 90436F POWER MOSFET THRU-HOLE MO-036AB IRFG6110 JANTX2N7336 JANTXV2N7336 REF:MIL-PRF-19500/598 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P
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90436F
MO-036AB)
IRFG6110
JANTX2N7336
JANTXV2N7336
MIL-PRF-19500/598
150mH,
IRFG6110
JANTX2N7336
JANTXV2N7336
MO-036AB
90436
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International
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91664B
IRFG5210
MO-036AB)
276mH,
475mH,
-200V,
MO-036AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 90437D POWER MOSFET THRU-HOLE MO-036AB IRFG5110 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5110 IRFG5110 RDS(on) 0.7Ω 0.7Ω ID 1.0A -1.0A CHANNEL N P HEXFET® MOSFET technology is the key to International
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90437D
MO-036AB)
IRFG5110
150mH,
-100V,
MO-036AB
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PDF
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Untitled
Abstract: No abstract text available
Text: in te rrii RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The R FP 12P 08, and R F P 1 2P 10 are P-Channel enhancem ent mode silicon gate power field effect transistors June 1999 File Number 1495.2 Features • 12A, 8 0 V and 100V
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RFP12P08,
RFP12P10
AN7254
AN7260
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PDF
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ota1
Abstract: No abstract text available
Text: V e rs i o n 2. 1, 22 M a rc h 2 0 1 0 CCM-PFC ICE 2P CS 03 ICE 2P CS 03 G St a n d a l o n e Po w e r F a c to r Co r re c t io n P F C C o n tr o lle r i n Co n tin u o u s C o n d u c t io n M o d e (C CM ) wit h I n p u t B ro w n -O u t Pr o te c t io n
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2PCS06
Abstract: ice2pcs06 ICE2PCS06G, ice2pcs01
Text: V er s i on 1 . 1 , M a r 2 0 1 0 CCM-PFC ICE 2P CS 06 ICE 2P CS 06 G St a n d a l o n e Po w e r F a c to r Co r re c t io n P F C C o n tr o lle r i n Co n tin u o u s C o n d u c t io n M o d e (C CM ) wit h I n p u t B ro w n -O u t Pr o te c t io n
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2PCS02
Abstract: ICE2pcs02 ICE2PCS02G
Text: V e rs i o n 2. 4, 22 M a r 2 0 1 0 CCM-PFC ICE 2P CS 02 ICE 2P CS 02 G St a n d a l o n e Po w e r F a c to r Co r re c t io n P F C C o n tr o lle r i n Co n tin u o u s C o n d u c t io n M o d e (C CM ) wit h I n p u t B ro w n -O u t Pr o te c t io n
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2PCS04
Abstract: ICE2PCS04G
Text: V e rs i o n 2. 1, 22 M a rc h 2 0 1 0 CCM-PFC ICE 2P CS 04 ICE 2P CS 04 G St a n d a l o n e Po w e r F a c to r Co r re c t io n P F C C o n tr o lle r i n Co n tin u o u s C o n d u c t io n M o d e (C CM ) wit h I n p u t B ro w n -O u t Pr o te c t io n
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68A diode
Abstract: MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator
Text: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International
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Original
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91664B
IRFG5210
MO-036AB)
276mH,
475mH,
-200V,
MO-036AB
68A diode
MJ 68A
IRFG5210
MO-036AB
4.5v to 100v input regulator
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PDF
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2N5086
Abstract: 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.
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2N5086
MMBT5086
2N5087
MMBT5087
2N5086
2N5087
MMBT5086
OT-23
CBVK741B019
F63TNR
MMBT5087
PN2222N
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PDF
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SOT-23 MARK 2Q
Abstract: BEL 167 transistor transistor k 2541 2N5086 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.
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2N5086
MMBT5086
2N5087
MMBT5087
2N5086
2N5087
MMBT5086
OT-23
SOT-23 MARK 2Q
BEL 167 transistor
transistor k 2541
CBVK741B019
F63TNR
MMBT5087
PN2222N
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PDF
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