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    2SA1020 TOSHIBA Search Results

    2SA1020 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    2SA1020 TOSHIBA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pnp transistor a1020

    Abstract: A1020 transistor A1020 Y transistor a1020 a1020 pnp transistor A1020 Y pnp 2SA1020 toshiba marking code transistor 2sc2655 A1020 2SC2655
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		2SA1020 2SC2655 O-92MOD pnp transistor a1020 A1020 transistor A1020 Y transistor a1020 a1020 pnp transistor A1020 Y pnp 2SA1020 toshiba marking code transistor 2sc2655 A1020 2SC2655 PDF

    pnp transistor a1020

    Abstract: A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y pnp A1020 Y transistor BR A1020 A1020 PNP toshiba marking code transistor 2sc2655 A1020 Y transistor
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		2SA1020 2SC2655 O-92MOD pnp transistor a1020 A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y pnp A1020 Y transistor BR A1020 A1020 PNP toshiba marking code transistor 2sc2655 A1020 Y transistor PDF

    pnp transistor a1020

    Abstract: A1020 transistor transistor a1020 toshiba marking code transistor 2sc2655 A1020 Y pnp A1020 Y A1020 PNP a1020 pnp transistor 2SA1020 toshiba
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		2SA1020 2SC2655 O-92MOD pnp transistor a1020 A1020 transistor transistor a1020 toshiba marking code transistor 2sc2655 A1020 Y pnp A1020 Y A1020 PNP a1020 pnp transistor 2SA1020 toshiba PDF

    pnp transistor a1020

    Abstract: A1020 transistor 2SA1020 A1020 Y pnp toshiba marking code transistor 2sc2655 transistor a1020 a1020 pnp 2SC2655 A1020 a1020 pnp transistor
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW


    Original     		2SA1020 2SC2655 150lled pnp transistor a1020 A1020 transistor 2SA1020 A1020 Y pnp toshiba marking code transistor 2sc2655 transistor a1020 a1020 pnp 2SC2655 A1020 a1020 pnp transistor PDF

    pnp transistor a1020

    Abstract: transistor 2SA1020 transistor a1020 2SA1020 2SC2655 A1020 A1020 transistor
    Text: 2SA1020 TO SH IBA 2 S A 1 020 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX • • • Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (IC= -1 A )


    OCR Scan     		2SA1020 2SC2655. pnp transistor a1020 transistor 2SA1020 transistor a1020 2SA1020 2SC2655 A1020 A1020 transistor PDF

    sa1020

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL 2 SA1020 SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1020) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (I e = -1 A )


    OCR Scan     		SA1020 2SA1020) 2SC2655. 75MAX 2SA1020 sa1020 PDF

    pnp transistor a1020

    Abstract: A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y A1020 A1020 Y pnp transistor 2SA1020 2SA1020 2SC2655
    Text: 2SA1020 TOSHIBA 2 S A 1 020 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX • Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (Ie= -1 A )


    OCR Scan     		2SA1020 2SC2655. 75MAX O-92MOD VCB----50V, pnp transistor a1020 A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y A1020 A1020 Y pnp transistor 2SA1020 2SA1020 2SC2655 PDF

    2SA1020L

    Abstract: 2sa1020
    Text: T O SH IB A 2SA1020 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm 5.1 M AX • Low Collector Saturation Voltage : V r> W oo^= -0.5V (Max.) Q n = - 1 A )


    OCR Scan     		2SA1020 2SC2655. 75MAX 2SA1020L 2sa1020 PDF

    2SA1020

    Abstract: No abstract text available
    Text: 2SA1020 SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS _ U n i t in m m 5.1MAX. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES: •Low Collector Saturation Voltage : V c E ( s a t ) = - 0 . 5 V (Max.)


    OCR Scan     		2SA1020 2SC2655. 2SA1020 PDF

    transistor 2SA1020

    Abstract: pnp transistor a1020 a1020 pnp transistor transistor a1020 A1020 transistor 2SA1020 A1020 PNP A1020(Y)T 2SC2655 A1020
    Text: 2SA1020 TO SH IBA 2 S A 1 020 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 MAX. POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (IC= -1 A ) High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		2SA1020 2SC2655. O-92MOD transistor 2SA1020 pnp transistor a1020 a1020 pnp transistor transistor a1020 A1020 transistor 2SA1020 A1020 PNP A1020(Y)T 2SC2655 A1020 PDF

    pnp transistor a1020

    Abstract: A1020 transistor A1020 transistor 2SA1020 transistor a1020 sa1020 2SA1020 A1020 Y pnp 2SC2655 a1020 pnp transistor
    Text: 2SA1020 TO SH IBA 2 S A 1 020 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 MAX. POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (IC= -1 A ) High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		2SA1020 2SC2655. O-92MOD pnp transistor a1020 A1020 transistor A1020 transistor 2SA1020 transistor a1020 sa1020 2SA1020 A1020 Y pnp 2SC2655 a1020 pnp transistor PDF

    2sa1020L

    Abstract: 2SA1020 2SC2655
    Text: TO S H IB A 2SA1020 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 020 PO W ER AM PLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm PO W ER SWITCHING APPLICATIONS. 5.1 MAX • Low Collector Saturation Voltage : v CE(sat) = -0 .5 Y (Max.)


    OCR Scan     		2SA1020 75MAX 2SC2655. 2sa1020L 2SA1020 2SC2655 PDF

    2SB1013

    Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
    Text: 60 - $! tt « Type No. 2SB 1013 v 2SB 1014 ^ 2S8 1015 - 2SB 1016 , 2SB 1017 2SB 1018 2SB 1019 « Manuf. -_ 3IC SANYO H. S S TOSHIBA b m NEC ±L HITACHI m ± FU JITSU i3 T fc' MATSUSHITA = m M IT SU B ISH I □ - Jx ROHM 2SA1160 2SB1068 2SB976 2SB1426 2SA1020


    OCR Scan     		2SA1160 2SB1068 2SB976 2SB1426 2SA1020 2SB1116 2SB621 2SB1Q44M 2SB1134 2SB1094 2SB1013 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1020 TO SHIBA 2 S A 1 020 TO S H IB A TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SW ITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 5.1 M A X • Low Collector Saturation Voltage : V C E (sa t)= —0.5V(Max.) (IC= -1 A )


    OCR Scan     		2SA1020 2SC2655. PDF

    2SA1385

    Abstract: 2SB1256 2SB892 2SA1020 2SB1015 2SA1266 2SA1770 2SB1441 25B1142 2sb111
    Text: m « Type No. 2SB 1426 , 2SB 1427 2SB 1428 — 2SB 1429 2SB 1430 2SB 1431 2SB 1432 ^ 2SB 1433 2SB 1434 2SB 1435 2SB 1436 2SB 1437 2SB 1438 2SB 1439 2SB 1440 2SB 1441 2SB 1442 2SB 1443 2SB 1444 2SB 1445 2SB 1446 2SB 1447 2SB 1448 2SB 1449 2SB 1450 2SB 1451


    OCR Scan     		2SB1395 2SA1266 2SB1446 2SB1434 2SA1363 2SB892 2SB1117 2SB1317 2SB913 2SA1385 2SB1256 2SB892 2SA1020 2SB1015 2SA1770 2SB1441 25B1142 2sb111 PDF

    2SB638

    Abstract: 2SB897 2S8834 2sa1015 2SB596 2SB1314 2SA953 2SA1217 2SB793 2SA1108
    Text: - 66 - « m Type ft No. € M a n uf. E ft 2SA886 2SB1314 2SB601 2SB1434 2SA1286 893 - 2SB 894 ^ 2 SB 895 2SB 895A 2SB 899 2SB 900 2SB 901 2S8 902 2SB 905 2SB 908 2SB 907 2SB 908 2SB 909- 2SB 910- 2SB 911 2SB 912 2SB 913 2SB 914 ; - „ . - 2SB 915 2SB 916


    OCR Scan     		2SA984 2SA562TM 2SA953 2SA673A 2SA720 2SB1142 2SA1217 2SB744 2SA715 2SA886 2SB638 2SB897 2S8834 2sa1015 2SB596 2SB1314 2SB793 2SA1108 PDF

    2SB1547

    Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
    Text: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020


    OCR Scan     		ZSB113Ã 2SB1223 2SB1024 2SA1718 2SB950 2SB1342 2SB1224 2SB1022 2SA1719 2SB1464 2SB1547 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718 PDF

    2SB873

    Abstract: 948a 2SB1010 2S897 939-940 2SB1095 2SA1296 2SB1103 2SB 2SB B 947A 2SB1017
    Text: - s « tt Type No. 2SB 922 2SB 922L 2S8 525 2SB 925A 2SB 2S6 2SB 2SB 2SB 2SB 926 J 927. 930 930A 93! 932 2SB 2SB 2SB 2SB 2SB 2SB 933 934 936 937 938 939 « Manuf. = m SANYO * 2 TOSHIBA S S NEC 2SA1227 S tL HITACHI * ± a FUJITSU te T MATSUSHITA h MITSUBISHI


    OCR Scan     		2SA122Ã 2SA1452 2SB953 2SB1019 2SA1645 2SB953A 2SA1296 2SB976 2SA1282A 2SB1010 2SB873 948a 2SB1010 2S897 939-940 2SB1095 2SA1296 2SB1103 2SB 2SB B 947A 2SB1017 PDF

    2SA1146

    Abstract: 2SB1200 2SB764 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576
    Text: - Si % Type No. tt € Manuf. = m SANYO ill TOSHIBA 2 SB 1043 □— A 2SB764 2SB 1044 □— A 2SA1705 2SB 1045 U 2SA1415 2SA1200 2SB 1046 B ±L 2SA1415 2SA1384 2SB 1047 ±L 2SA1415 2SB1200 2SB 1048 i 2SB1126 T 2SA1783 T 2SA1702 2SB 1051 □— A 2SA1338


    OCR Scan     		2SB764 2SA1Q20 2SB605 2SA683 2SA1705 2SB793 2SA1415 2SA1200 2SA1173 2SA1146 2SB1200 2SB793 2SB605 2SB507 2SB744 NEC 2SA874 2SB1185 2SB1576 PDF

    SS2205

    Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
    Text: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3


    OCR Scan     		SS2205 UN411H RT1P234S DTA123YS 2SA1781 2SA1162 2SB736 2SB709A 2SA1235 2SA1753 SS2205 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934 PDF

    2SA1302 TOSHIBA

    Abstract: 2SA1302 Toshiba 2Sa1302 SB 1156 2sb817 2SB863 2SB1371 mitsubishi 1183 2SB1407 2SB1201
    Text: - 64 - S € Type No. tt « Manuf. H # SANYO M S TOSHIBA S NEC S ÏZ HITACHI 8 ± Ü FUJITSU fé T MATSUSHITA 2SB 1 1 4 « fé T 2SB 1149— ' « 2S6 1151 , B « 2SB1165 2SB 1152 «5 T 2SB817 2SB 1153 fé T 2SB 1155" fâ T 2SB 1156 - fé T 2SB 1157 fé T 2SB776


    OCR Scan     		2SB1267 2SB937A 2SB1165 2SB933 2SB817 2SB863 2SA1227A 2SA1302 2SB1371 2SB776 2SA1302 TOSHIBA 2SA1302 Toshiba 2Sa1302 SB 1156 2SB1371 mitsubishi 1183 2SB1407 2SB1201 PDF

    equivalent 2SC2655

    Abstract: 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA
    Text: TOSHIBA {DI SC RE TE /O PT O} Sb D eT | TCnTESO 0Q07104 0 / — 9097250 TOSHIBA — ^ D I S C R E T E / O P T O _ ~ /' 5 61 07 I 0 4 "" " D 2 f - ¿/ Chip Device For Hybrid IC (2) Power Mini Transistor (Equivalent to SOT-89) Type Application Electrical Characteristic (Ta = 25°C)


    OCR Scan     		0Q07104 OT-89) T092MOD 2SC2880 2SA949 2SA1200 2SA1201 2SA1202 2SC2882 equivalent 2SC2655 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA PDF

    2SC2655

    Abstract: 2SC2655 Silicon NPN Epitaxial Type transistor 2SC2655 2sc2655 y
    Text: T O SH IB A 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : VCE (sat) = 0.5V (Max.) (IC = 1A) High Speed Switching Time : tgtg =1.0/^s (Typ.)


    OCR Scan     		2SC2655 2SA1020. 2SC2655 2SC2655 Silicon NPN Epitaxial Type transistor 2SC2655 2sc2655 y PDF

    2SC2655

    Abstract: 2SC2655 Silicon NPN Epitaxial Type 2SA1020
    Text: TOSHIBA 2SC2655 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		2SC2655 2SA1020. 75MAX O-92MOD 2SC2655 2SC2655 Silicon NPN Epitaxial Type 2SA1020 PDF