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    2SA1180 Search Results

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    2SA1180 Price and Stock

    FUJITSU Limited 2SA1180

    10 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-3P
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    Quest Components 2SA1180 60
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    Fairchild Semiconductor Corporation 2SA1180

    10 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1180 5
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    2SA1180 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1180 Fujitsu Silicon High Speed Power Transistor Scan PDF
    2SA1180 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1180 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1180 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1180 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1180 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1180 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1180 Unknown Cross Reference Datasheet Scan PDF
    2SA1180A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1180A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1180A Unknown Cross Reference Datasheet Scan PDF

    2SA1180 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1180

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1180 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations APPLICATIONS ・For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter


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    PDF 2SA1180 -25mA -180V; 2SA1180

    2SA1180

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SA1180 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1


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    PDF 2SA1180 -25mA -180V; 2SA1180

    2SA1180

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SA1180 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1


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    PDF 2SA1180 -25mA -180V; 2SA1180

    Untitled

    Abstract: No abstract text available
    Text: toaucti, One. j. \-f TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1180 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEO=-150V(Min.) • High Power Dissipation


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    PDF 2SA1180 -150V -25mA; -150V;

    2SA1180

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1180 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min.) ·High Power Dissipation APPLICATIONS ·Designed for power switching amplifier and general purpose


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    PDF 2SA1180 -180V -25mA; -180V; 2SA1180

    2SA1108A

    Abstract: 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1154 2SA1108 2SA1104 2SA1184
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 60W 2SA1102 -80 -6 -6A 150 80 -4 -2A 20* 150 (Tc=25ºC) 70W 2SA1103


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    PDF 2SA1102 2SA1103 2SA1104 2SA1105 2SA1106 2SA1107 2SA1107A 2SA1108 2SA1108A 2SC2853 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1154 2SA1108 2SA1104 2SA1184

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


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    PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    2SA1180

    Abstract: No abstract text available
    Text: AOK AOK Semiconductor Product Specification 2SA1180 Silicon PNP P o w er Transistors DESCRIPTION • W ith TO-3 package • High power dissipations APPLICATIONS • For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION


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    PDF 2SA1180 -180V:

    2SC2526

    Abstract: FT1551 2SA1075 2SA1076 2SA1250 2SC2428 2SC2431 FT2551 2SC2530 2SC2530 to-3
    Text: FUJITSU MICROELECTRONICS T? DE I 37Mci7ba D ü o n s s 5 3 7C Q .19 5 5 7^- <3 3 - Q /_ -_ 37 4 9 7 6 2 F u j i t s u m i c h o e l e c t r o n i c s 020000060101020100000048020202 F U J IT S U ! P1WEB Ï1 M S T 0 H LOW V O L T A G E HIGH SPEED POWER T R A N S IS T O R


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    PDF 3iA97fa2 37MT7Ed5 2SC2530 2SA1080 O-220 FT1551 FT2551 2SC2528 2SA1078 2SC2526 2SA1075 2SA1076 2SA1250 2SC2428 2SC2431 2SC2530 to-3

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711