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    7MPV6202SA66M Renesas Electronics Corporation 256KB BURST TRI. MOD. Visit Renesas Electronics Corporation
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    Rochester Electronics LLC A80486DX2SA66

    IC MPU INTELDX2 66MHZ 168CPGA
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    Hirose Electric Co Ltd AP105-GT10R-2022S-A(66)

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    Intel Corporation A80486DX2SA66

    80486DX2- Microprocessor, x86 Arch, 32-Bit, 66MHz, CMOS, CPGA168
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    2SA66 Datasheets (81)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA66 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA66 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA66 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA66 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA66 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA66 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA66 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA660 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA661 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA661 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA661 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA661 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA661 Unknown Scan PDF
    2SA661 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA661 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA661 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SA661 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA661 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA661 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA661 Unknown Cross Reference Datasheet Scan PDF

    2SA66 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC793

    Abstract: 2SA663
    Text: SavantIC Semiconductor Product Specification 2SA663 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC793 APPLICATIONS ·For radio frequency,audio frequency and power amplifier applications


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    PDF 2SA663 2SC793 -100V; 2SC793 2SA663

    2SC793

    Abstract: 2SA663
    Text: JMnic Product Specification 2SA663 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation ・Complement to type 2SC793 APPLICATIONS ・For radio frequency,audio frequency and power amplifier applications PINNING see Fig.2


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    PDF 2SA663 2SC793 -100V; 2SC793 2SA663

    2SC793

    Abstract: 2SA663
    Text: Inchange Semiconductor Product Specification 2SA663 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC793 APPLICATIONS ·For radio frequency,audio frequency and power amplifier applications


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    PDF 2SA663 2SC793 -100V; 2SC793 2SA663

    2SC793

    Abstract: No abstract text available
    Text: ls.iis.ii(_/ J^zml-Conduckoi £/-\oduc£i, One. C7 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA663 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= -80V(Min.)


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    PDF 2SA663 2SC793 -50mA; 2SC793

    2SC793

    Abstract: 2SA663
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA663 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= -2.3V(Max.)@ IC= -5A ·Complement to Type 2SC793


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    PDF 2SA663 2SC793 2SC793 2SA663

    bc 558 equivalent

    Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015


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    PDF To-92 2SA467 2SA578 2SA721 2SA494 2SA579 2SA723 2SA495 2SA608 2SA724 bc 558 equivalent pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2sc897 hitachi

    Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .


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    PDF 2SA648 2SA663 2SC793 2SD188 2N5347 2N5478 2N6316 2N6318 2N5872 2N5874 2sc897 hitachi nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2SA666

    Abstract: 2SA666A
    Text: 2SA666, 2SA666A 2SA66Ó, 2SA6ÓÓA v ' J a > PNP xH"^4:vTJU7'U'—M Ü /Si PNP Epitaxial Planar féJ3S£féü;i 1iîÎll lffl/'A F Low Noise Amplifier 4# & ' /F e a tu re s • H ÏFftîfc NF • U n it : mm 4. lm ax. 5. lmax. noise figure Low hFE ¿V * £ w /H ig h hFE


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    PDF 2SA666, 2SA666A 2SA666 2SA666 2SA666A

    2SA661Y

    Abstract: 2SA661 2SC1166 RH-16 2sc1166 o
    Text: v U 3 > P N P x t í ^ + v7JU^ 2SA661 O O CPCT^Ä SILICON PN P EPITAXIAL TRANSISTOR PCT PROCESS) Unit in mm D riv er S tag e an d A m plifier A pplications. H igh V oltage A m plifier A pplications. • SSW ffit-f- : V ceoS ;—50V : Pc = 600mW (T a=25°C )


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    PDF 2SA661 600mW 2SC11661 2SC1166 RH-16 200mA 100mA, -200mA 2SA661 2SA661â 2SA661Y 2SC1166 RH-16 2sc1166 o

    2SC1000

    Abstract: 2SC828 P 2SC735 2SC1330 2SC923 c1213a 2SC537 2SC373 2SA640 2SA673A
    Text: Low Level and General Purpose Amplifiers TYPE NO. MAXIMUM RATINGS POLA­ RITY CASE 2SA561 2SA564 2SA564A 2SA640 2SA641 P P P P P 2SA666 2SA666A 2SA673A 2SA721 2SA722 H FF- VcE sal fT min max le (mA) (MHz) (MHz) C 0b N.F. max le (mA) VCE (V) max 400 tt 700 tt


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    PDF 2SA561 2SA564 2SA564A 2SA640 2SA641 2SA666 2SA666A 2SA673A 2SA721 2SA722 2SC1000 2SC828 P 2SC735 2SC1330 2SC923 c1213a 2SC537 2SC373

    2SC644

    Abstract: 2SC1222 2sC537 2SC1000 2SC1328 2SC828 P 2SC1327 2SA889 2SC923 2SA1015
    Text: Low Level and General Purpose Amplifiers TY PE PO LA ­ NO. RITY CASE M A XIM UM RATINGS Pd IC VCEO mW (mA) (V) H FE min VCE(sat) max fT Cob N.F. ic VCE max IC max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) m in 2SA641 2SA666 2SA666A 2SA673A 2SA721 P P P P


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    PDF 2SA641 O-92B 2SA666 2SA666A 2SA673A 2SA721 2SC644 2SC1222 2sC537 2SC1000 2SC1328 2SC828 P 2SC1327 2SA889 2SC923 2SA1015

    2SC793

    Abstract: 2SA663 2SC793/B
    Text: AOK AOK Semiconductor Product Specification 2SA663 Silicon PNP Power Transistors DESCRIPTION • W ith T O -3 package • W ide area o f safe operation • C om plem ent to type 2S C 793 APPLICATIONS • For radio frequency,audio frequency and pow er am plifier a pplica tions


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    PDF 2SA663 2SC793 -100V; 220MAX 13MAX 2SC793/B

    2SC793

    Abstract: 2SA663 2sa663y 2SA663-Y hFE-30 TRANSISTOR 751 AC73 2SC7 2SC793/B
    Text: 2SA663 '>IJ 3 > P N P x t ' ÿ + V 7 SILICON PNP EPITAX IAL MESA TRANSISTOR O P ow er A m plifier A p plication s H i-F i 7 'S T '& X l& K ffiL t- t 21.0tfMax 2 = P c = 60W T c = 25°C e? • I t i l B i f ¡ f i l & f e S U V' : hFE = 3 0 ~ 2 0 0 • f ijiiE E T r f • V c e o ——80 V


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    PDF 2SA663 2SC793 -C-tiiiJ50W 2SC793 2SA663 2SA663â 300x300x1mm 200X200XI 2sa663y 2SA663-Y hFE-30 TRANSISTOR 751 AC73 2SC7 2SC793/B

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    C3182N

    Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
    Text: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn


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    PDF 2SA51 2SA57 2SC3281 2SD1571 C3182N C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855

    2SA661

    Abstract: RH-16 Produced by Perfect Crystal Device Technology
    Text: 2 s a 661 S /U D ^ P N P Il^ ^ /W & h ^ S t t W C T E S C ^ IL IC O N PNP EPITAXIAL TRANSISTOR PCT PROCESS) O Unit in O D river ° High Stag© and V oltage A m plifier A m plifier A pplications A pplications -50 V CEO e>a t 5 0Q7 fff%. => IX 9 S W •' P c = 6 0 0 m W ( T a = 8 5 ' C )


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    PDF 2sa661 600mW SSC1166 3SC1166 IJI1HH-16 RH-16 RH-16 2SA661 Produced by Perfect Crystal Device Technology

    2SA564A-P

    Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
    Text: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A


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    PDF 2N5138 2N5172 O-92B 2N5209 O-92A 2N5210 2N5219 2IM5223 2SA564A-P 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2SA1715 2SC372

    SFT308

    Abstract: SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B SFT308 SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204

    SFT307

    Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 SFT307 usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302

    2SC1166

    Abstract: 2sc1166y transistor BC RH 2sc1166-0 2sc1166 o 2SA661 2SC1166-Y 16F TRANSISTOR RH-16 2SC1166-GR
    Text: i/U 3 > N P N x ti* * 5 /7 h 7 > v X i/ P C m SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) 2SC1166 O Driver Stage Amplifier Applications. Voltage Amplifier Applications. O • S t f E - t r f ; V Ceo ^ 5 0 V • : Pc = 600mW (Ta=25°C) • 2SA 661 t ^ y 7 ° ) s y * y


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    PDF 2SC1166 600mW 2SA661 2SA661 RH-16 100mA, 200mA -10mA 2SC1166 2SC1166â 2sc1166y transistor BC RH 2sc1166-0 2sc1166 o 2SC1166-Y 16F TRANSISTOR RH-16 2SC1166-GR