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    2SA671 TRANSISTOR Search Results

    2SA671 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2SA671 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA671

    Abstract: 2SC1061 2SA670 2SC1061 PNP
    Text: JMnic Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1061 ・Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ・Designed for use in low frequency power amplifier applications


    Original     		2SA671 O-220 2SC1061 2SA670 O-220) 2SA671 2SC1061 2SC1061 PNP PDF

    2SC1061

    Abstract: 2SC1060 2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2sc1061 datasheet 2SA671
    Text: Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power


    Original     		2SC1061 O-220 2SA671 2SC1060 2SC1061 2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2sc1061 datasheet 2SA671 PDF

    2sa671

    Abstract: 2SA670 2SC1061 2sa671 equivalent 2SC1061 PNP
    Text: SavantIC Semiconductor Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1061 ·Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ·Designed for use in low frequency


    Original     		2SA671 O-220 2SC1061 2SA670 O-220) 2sa671 2SC1061 2sa671 equivalent 2SC1061 PNP PDF

    2SC1061

    Abstract: 2SC1060 2Sc1060 equivalent 2SA671 2SC1061 C
    Text: Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power amplifier applications


    Original     		2SC1061 O-220 2SA671 2SC1060 2SC1061 2Sc1060 equivalent 2SA671 2SC1061 C PDF

    2SC1061

    Abstract: Transistor 2sC1061 2SA671 2sA671 transistor 2sC1061 transistor 2SC1061 PNP
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION •Low Collector Saturation Voltage: VCE SUS = -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier


    Original     		2SA671 2SC1061 2SC1061 Transistor 2sC1061 2SA671 2sA671 transistor 2sC1061 transistor 2SC1061 PNP PDF

    2SC1061

    Abstract: transistor 2SC1061 2sc1061 npn transistor datasheet 2SA671 2sc1061 npn transistor
    Text: 2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		2SC1061 O-220 2SA671 2SC1061 transistor 2SC1061 2sc1061 npn transistor datasheet 2SA671 2sc1061 npn transistor PDF

    2SC1061

    Abstract: 2SA671 transistor 2SC1061 2sA671 transistor
    Text: 2SA671 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SC1061 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		2SA671 O-220 2SC1061 2SC1061 2SA671 transistor 2SC1061 2sA671 transistor PDF

    2SC1061

    Abstract: 2sc1060 2SA671 2SC1061 C 2SC1061-C
    Text: SavantIC Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications


    Original     		2SC1061 O-220 2SA671 2SC1060 2SC1061 2SA671 2SC1061 C 2SC1061-C PDF

    2SC1061 f

    Abstract: No abstract text available
    Text: , One. J. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(susr -1.0V(Max)@ lc= -2.0A • DC Current Gain


    Original     		2SA671 2SC1061 O-220C -50mA 2SC1061 f PDF

    NPN 80V 3A

    Abstract: 2SA671 2SD526 transistor 2SD526
    Text: 2SD526 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		2SD526 O-220 2SA671 NPN 80V 3A 2SA671 2SD526 transistor 2SD526 PDF

    2SA670

    Abstract: 2SA671 2SC1061
    Text: Inchange Sem iconductor Product Specification S ilicon PNP Power Transistors 2SA671 DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC1061 • Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS - /*v • Designed for use in low frequency


    OCR Scan     		2SA671 T0220 2SC1061 2SA670 2SC1061 PDF

    60B120

    Abstract: 2SA671 2SC1061
    Text: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS PNP 2SA671 .designed for use in iow frequency power amplifier applications FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf @ ic=2.0A,lB=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A * Complememtary to NPN 2SC1061


    OCR Scan     		2SC1061 2SA671 60B120 2SC1061 PDF

    2SC1061

    Abstract: 2SA671 2sA671 transistor Transistor 2sC1061 2sa671 equivalent 2sC1061 transistor 2sc1061 equivalent
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA671 DESCRIPTION •Low Collector Saturation Voltage: VCE SUS = -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier


    Original     		2SA671 2SC1061 2SC1061 2SA671 2sA671 transistor Transistor 2sC1061 2sa671 equivalent 2sC1061 transistor 2sc1061 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: J.S.11S.U <~>z ni-C,onaiLct:oi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA671 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ lc= -2.0A


    Original     		2SA671 2SC1061 O-220C -50mA PDF

    2sb526

    Abstract: 2sc1060 2SC789 2SD359 2SA816 2SB529 2SD331 2SD365 2SB513A 2SB514
    Text: Power Transistors TYPE POLA­ NO. RITY P Pd IC VCEO mW (A) (V) 25 20 3 2 20 10 10 min max 80 50 30 40 2 2 0.8 50 20 80 40 55 55 160 320 320 300 300 10 40* 30 25 25 2 2 20 60 60 40 50 55 60 40 40 35 300 200 240 240 320 35 40 70 40 40 320 400 240 240 2SB 513A


    OCR Scan     		2SB513A 2SB514 2SB515 2SB523 2SB526 2SB529 2SB566A 2SC789 2SC790 2SC1060 2SD359 2SA816 2SD331 2SD365 PDF

    2sb526

    Abstract: 2SB529 2SC789 2SA816 2SD331 2SB513A 2SB514 2SB515 2SB523 2SB566AK
    Text: Power Transistors TYPE NO. IC mA VCE (V) VCE(sat) max (V) IC (A) fT min (MHz) COMPLE­ MENTARY TYPE # # ft ft ft 1 1 1 0.5 0.3 3 2 2 4 4 1 1 1 2 1 2 2 2 1.5 0.3 8+ 8+ - 2SD366A 2SD330 2SD331 - ft 4 4 5 2 4 1 1 1.5 1.4 10 1.5 1 3 2 2 - - # # # 0.5 1 0.5 0.5


    OCR Scan     		2SB513A O-220 2SD366A 2SB514 2SD330 2SB515 2SD331 2SB523 2sb526 2SB529 2SC789 2SA816 2SD331 2SB566AK PDF

    2SC1061

    Abstract: transistor 2SC1061 2sC1061 transistor 2SA671 2sc1061 npn transistor 2SC1061 PNP 2SC1061 f L50C power Transistor 2SC1061
    Text: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN .designed for use in low frequency power amplifier applications 2SC1061 FEATURES: * Low Collector-Emitter Saturation Voltage v CE satf 1 0 V (Max @ I c =2.0A,I b=0.2A * DC Current Gain hFE= 35-320@lc= 0.5A


    OCR Scan     		2SA671 2SC1061 transistor 2SC1061 2sC1061 transistor 2SA671 2sc1061 npn transistor 2SC1061 PNP 2SC1061 f L50C power Transistor 2SC1061 PDF

    2n6125

    Abstract: No abstract text available
    Text: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E ­ IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100


    OCR Scan     		MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 2n6125 PDF

    2sc1061

    Abstract: 2SC1626 2N6108
    Text: Power Transistors TYPE POLA­ CASE NO. RITY U te min max Ic A V ce (V) max (V) fl COMPLE­ min MENTARY lc (A) (MHz) TYPE D45C12 MH0810 MH0816 MH0818 MH0870 P P P P P TO-220 TO-220 TO-220 TO-220 TO-220 30 12 10 10 30 4 3 1 1 4 80 30 60 80 50 20 40 40 40 40


    OCR Scan     		D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 2sc1061 2SC1626 2N6108 PDF

    2SB512P

    Abstract: tip318 TIP31N TIP308 MH0870 TIP298 2sb435 2sc1060 MH8106 MH8500
    Text: TYPE NO. P O L A R ITY Power Transistors M A X IM U M R A TIN G S Pd 'c W A) V C E(SA T) h fe V CEO (V) 'c min max (A) V CE (V) 1 0.5 0.2 0.2 1 1 max 'c fT min (V) (A) 2 2 2 2 2 2 0.8 0.8 0.5 0.5 1.2 0.8 2 2 0.5 0.5 3 2 5 30 50 50 5 5 (MHz) COMPLE­ M ENTARY


    OCR Scan     		MH0870 O-220 MH8700 MH8100 O-22C MH0810 MH8106 MH0816 H8108 2SB512P tip318 TIP31N TIP308 TIP298 2sb435 2sc1060 MH8500 PDF

    2sc630

    Abstract: KT817B IDB434 2SD130 2SB1003 2N3167 MOTOROLA 2sd1369 bd57 2SC790R 2N319
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T (V) (W) Min (Hz) r •CBO Max Max (A) (8) (CE)ut Max (Ohms) Top«r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


    Original     		KT817A 2SD91 IDB1023 IDD1413 2SB1003 2SD1369 BDY34 2N3632 See00n 2sc630 KT817B IDB434 2SD130 2N3167 MOTOROLA bd57 2SC790R 2N319 PDF

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037 PDF

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF