2SB TRANSISTOR Search Results

2SB TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

2SB TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Transistors Abstract: Bipolar Transistors 2SC SERIES TRANSISTORS Text: Bipolar transistors-2SB series Bipolar transistors-2SB series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and	OCR Scan		PDF
Bipolar Transistors Abstract: No abstract text available Text: Bipolar transistors-2SB series Bipolar transistors-2SB series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and	OCR Scan		PDF
B1335A Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A Text: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 \| 2SD 1763A 2SB 1186 \| 2SB 1186A 2SD 2033	OCR Scan	TQ-220, O-22QFP, 2SC4505 SDp901' 2SC4354 2SD2061 2SB1496 2SB1334" 2SC457 2SA1634 B1335A D2033A D1855A D2037 B1186A 2sb1335a d2038 B 1186a B1085A	PDF
Untitled Abstract: No abstract text available Text: 2SB1130AM/2SB1236A h 7 > y 7 i i / I ransistors 2SB 1130AM 2SB1236A PNP y ' J - ¡ > Epitaxial Planar PNP Silicon Transistors 't'ii^ jiite ffl/M e d iu m Power Amp. • \Ü £ \|3 \|/D im e n s io n s Unit : mm 2SB 1236A 2SB 1130A M BV c e o = — 160V 6.8± 0.2	OCR Scan	2SB1130AM/2SB1236A 1130AM 2SB1236A 2SD1665AM 2SD1857A 2SD1857A. SC-71	PDF
2SB1178 Abstract: 2SB1178A 2SD1748 2SD1748A Text: Power Transistors 2SB 1178, 2SB 1178A 2SB1178, 2SB1178A P ackage Dim ensions U nit ! mm Silicon PNP Epitaxial Planar Darlington Type 3.7m ax. S 1 7 3max. ^ 1 3.2m ax. A F Power Am plifier ' C om plem entary Pair with 2 S D 1 7 4 8 , 2 S D 1 7 4 8 A 0.9 ± 0 .1	OCR Scan	2SB1178, 2SB1178A 2SD1748, 2SD1748A 2SB117S 2SB1178 2SB1178A 2SD1748 2SD1748A	PDF
Untitled Abstract: No abstract text available Text: m V J - v ~ - : v . ‘ : - . « w j : ^ ' : - : :t o i i -• - > - ^r: >: OWE RANSISTOR PNP DARLINGTON POWER TRANSISTORS Absolute M axim um Ratings Type No. Pc W Vcbo Vceo (V) (V) 2SB 1257 25 -60 -60 -6 2SB 1258 30 -100 -100 -6 V ebo (V) lc (A) Electrical Characteristics at TA = 25°C	OCR Scan		PDF
B1307M Abstract: j 6810 J 6810 D 2SB1306 b1306 1307M 2SB1307 2SB1307M sb1306 B-1306 Text: /Transistors 2SB1306/2SB1307M/2SB1326 2S B 1306/2S B 1307M 2SB 1326 Epitaxial Planar PNP Silicon Transistors Freq. Power Amp. • • « Ä 1 VCE sat\| £ ( - 7 fi\n i@ 2SB1306 /D im e n s io n s 5.a±0.2 ( U n it: m m ) 2SB 1307M 4.810.? V cE (sa t)= —0.35V (Typ.)	OCR Scan	2SB1306/2SB1307M/2SB1326 1306/2S 1307M 2SB1306 1307M 2SB1326 B1307M j 6810 J 6810 D 2SB1306 b1306 2SB1307 2SB1307M sb1306 B-1306	PDF
2SB1372 Abstract: 2SD2065 Text: Power Transistors 2SB 13 7 2 2SB 1372 Silicon PNP Triple-Diffused Planar Type P ackage Dim ensions High Pow er Amplifier C om plem entary Pair with 2 S D 2 0 6 5 U nit : ram • Features o r • V ery g o o d lin e a rity of DC c u r r e n t gain I i f e	OCR Scan	2SB1372 2SD2065 ib307 2SB1372 2SD2065	PDF
transistor B502 Abstract: 2SD1760 2SB11 Text: Transistors Power Transistor 50V, 3A 2 S 1 7 6 0 / 2 S D D 1 8 6 4 / 2 S •F e a tu re s 1) 1 7 6 2 D •E x te rn a l dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0 .5 V (Ic / I b (Typ.) = 2A/0.2A) 2) Complements the 2SB11 8 4 /2SB 1243/2SB 1185. 2SD1760	OCR Scan	2SD1760 2SD1864 2SB11 1243/2SB 2SD1760) 2SD1864) 10Sec 10OOSec transistor B502 2SD1760	PDF
2SB821 Abstract: 2SB1276 Text: Z $ / T ransistors K "7 > V 2SB821 2SB 1276 2SB821 /2SB 1276 x t : $ * ÿ 7 J l ' 7 ° l s - i - B P N P ' j 3 > fit rbb' f é ^ f f ^ ' l i f f l / L o w rbb' Low Noise Am p. Epitaxial Planar PN P Silicon Transistors • # 1 f l f i S * T * * y S SI / Di men si o ns Unit : mm)	OCR Scan	2SB821 39V110A 03HH3J3H 3S10M 2SB1276	PDF
2SB1301 Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134 Text: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS	OCR Scan	2SB1301 2SB1301 2SD1952 MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134	PDF
MEI-1202 Abstract: 2SB800 2SD1001 IEI-1213 MF-1134 TC-5473B marking lp nec sot89 Text: DATA SHEET SILICON TRANSISTOR 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB 800 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package	OCR Scan	2SB800 2SB800 MEI-1202 2SD1001 IEI-1213 MF-1134 TC-5473B marking lp nec sot89	PDF
Untitled Abstract: No abstract text available Text: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors Power Transistor —40V, —2A 2SB 1183 / 2SB1239 / 2SB786F ^Absolute maximum ratings (Ta=25^C) 1 ) Darlington connection for high DC current gain. 2 ) Built-in 4 kO resistor between base and emitter.	OCR Scan	2SB1183 2SB1239 2SB786F 2SD1759 2SD1861 2SD947F D1759/2S /2SD947F.	PDF
IEI-1213 Abstract: MF-1134 MEI-1202 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB799 ml 1134 2SD1000 quality assurance for semiconductor devices NEC IR SOT89 transistor marking MK Text: DATA SHEET SILICON TRANSISTOR 2SB799 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB 799 is designed fo r audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package	OCR Scan	2SB799 2SB799 IEI-1213 MF-1134 MEI-1202 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL ml 1134 2SD1000 quality assurance for semiconductor devices NEC IR SOT89 transistor marking MK	PDF

d2400a Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s	OCR Scan	2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A d2400a transistor d2400a 2SD1916 2SD1763A SD1763A	PDF
2sd1763 Abstract: No abstract text available Text: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)	OCR Scan	2SB1236/2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 2SB1236 30pFatVcBâ 2SD1857/2SD1763. 2SB1236 2SB1186 2sd1763	PDF
TPCP8L01 Abstract: TPCP8L NPN Darlington HED Text: TOSHIBA Semiconductor Company \| Data Sheet Search \| Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top \| Refine Search \| Results \| Product Details Part Number: TPCP8L01 Category: Transistors /Bipolar Power Transistors/Low-Frequency Power Transistors 2SB Series,2SD Series	Original	TPCP8L01 645mm* 00V/1A TPCP8L01 16-Apr-09 TPCP8L NPN Darlington HED	PDF
transistors 2SA Abstract: 1782K 2SA series 2SA1807 2SD1834 Text: Bipolar transistors-2SA series Bipolar transistors-2SA series The series name for RO H M ’s bipolar transistors is used to classify the products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series These transistors are available in the following packages:	OCR Scan	SC-70, OT-323) SC-59, OT-23) SC-62, OT-89) SC-63, O-252 2SC4061K 2SB1427 transistors 2SA 1782K 2SA series 2SA1807 2SD1834	PDF
2SB1254 Abstract: 2SD1894 high current Darlington pair IC Darlington pair IC Text: Power Transistors 2SB 1254 Package Dimensions Unit : mm Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2S D 1894 1 5.5m ax. 5 2m ax. - s3 .2 • Features • Optimum for 60W hi-fi output • High DC current gain hpE	OCR Scan	2SB1254 2SD1894 TV-25T 001b2fl3 32BS2 2SB1254 2SD1894 high current Darlington pair IC Darlington pair IC	PDF
2SB1233 Abstract: 2SB1233A Text: Power Transistors 2 SB 1233 , 2 SB 1233 A 2SB 1233, 2SB1233A Silicon PNP Epitaxial Planar Type Package Dimensions P&wer Amplifier Unit : mm • Features • High co llector-em itter voltage 3.7max. 7.3max. V ceo 0.9 ± 0 . 1 O.Smax.- • Wide area of safety operation (ASO)	OCR Scan	2SB1233, 2SB1233A 2SB1233 2SB1233A	PDF
2n3055 npn transistor toshiba Abstract: TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp Text: 2. Id e n tific a tio n System 2.1 A C) Transistors EIAJ METHOD TOSHIBA HOUSE No. Example) (Example) 2SC 4289 A 1st 2nd 3rd ST100Q22 SI 298 1st group: transistor types are indicated as shown below. 1st group characters 2SA PNP high-frequency use 2SB PNP low-frequency use	OCR Scan	ST100Q22 2N3055 BF422 BU208 2n3055 npn transistor toshiba TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp	PDF
A-263A Abstract: 2SB1194 2SD1633 Text: 2SB 1194 Power Transistors 2SB1194 Silicon PNP Epitaxial Planar Darlington Type Power Switching Complementary Pair with 2SD 1633 Package Dimensions Unit • mm 4.4max. .lQ.Zmax., 5.7max. 2.9max • Features • • • • High speed switching Good linearity of DC current gain I i f e	OCR Scan	2SB1194 2SD1633 i3Efl52 A-263A 2SB1194 2SD1633	PDF
TOSHIBA 2N3055 Abstract: Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA 2N3055 ST transistors 2SA pnp vhf transistor ST100Q22 HF VHF power amplifier module transistor bf422 fet Text: 2.1 A Transistors C) EIAJ METHOD TOSHIBA HOUSE No. Example) (Example) 2 SC 780 1st 2nd ST100Q22 3rd SI 298 1st group: transistor types are indicated as shown below. 1st group characters 2.2 (Example) T ype 2SA PNP high-frequency use 2SB PNP low -frequency use	OCR Scan	ST100Q22 2N3055 BF422 BU208 TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA 2N3055 ST transistors 2SA pnp vhf transistor HF VHF power amplifier module transistor bf422 fet	PDF
B904 Abstract: D1213 2SB904 D152 2SD121 Text: Ordering number ¡EN1022A 2SB 904/2SD 1213 PNP/NPN Epitaxial Planar Silicon Transistors 30V/20A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =~0-5V{PNP), 0.4(NPN) max.	OCR Scan	eN1022A 2SB904/2SD1213 0V/20A 2SB904 B904 D1213 2SB904 D152 2SD121	PDF

2SB TRANSISTOR Search Results

2SB TRANSISTOR Result Highlights (5)

2SB TRANSISTOR Datasheets Context Search

Transistors

Bipolar Transistors

B1335A

Untitled

2SB1178

Untitled

B1307M

2SB1372

transistor B502

2SB821

2SB1301

MEI-1202

Untitled

IEI-1213

d2400a

2sd1763

TPCP8L01

transistors 2SA

2SB1254

2SB1233

2n3055 npn transistor toshiba

A-263A

TOSHIBA 2N3055

B904