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    2SB1243 TRANSISTOR Search Results

    2SB1243 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SB1243 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1


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    2SB1184 2SB1243 65Max. 2SB1184 2SD1760 2SD1864. 2SB1184) 2SB1243 2SD1864 PDF

    2SB1184 SC-63

    Abstract: 2SB1184 2SB1243 2SD1760 2SD1864
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 2.3 +0.2 −0.1 C0.5 2.5±0.2 6.8±0.2 0.55±0.1 2.3±0.2 2.3±0.2 (1) 1.05 (1) Base (2) Collector (3) Emitter


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    2SB1184 2SB1243 2SB1184 2SB1184) 2SB1243) 2SB1184 SC-63 2SB1243 2SD1760 2SD1864 PDF

    2SB1243

    Abstract: 2SB1184 2SD1760 2SD1864
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 2.3 +0.2 −0.1 C0.5 2.5±0.2 6.8±0.2 0.55±0.1 2.3±0.2 2.3±0.2 (1) 1.05 (1) Base (2) Collector (3) Emitter


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    2SB1184 2SB1243 2SB1184 2SB1184) 2SB1243) 2SB1243 2SD1760 2SD1864 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 !Structure


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    2SB1184 2SB1243 2SD1760 2SD1864. 2SB1184 65Max. SC-63 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 zExternal dimensions (Unit : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 zStructure


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    2SB1184 2SB1243 65Max. 2SB1184 2SD1760 2SD1864. SC-63 2SB1243 2SD1864 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 !Structure


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    2SB1184 2SB1243 65Max. 2SB1184 2SD1760 2SD1864. SC-63 2SB1243 2SD1864 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864 2SB1184 SC-63
    Text: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


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    2SB1184 2SB1243 2SB1184 65Max. 2SD1760 2SD1864. SC-63 R0039A 2SB1243 2SD1864 2SB1184 SC-63 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 60V, 3A 2SB1243 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1864. 2SB1243 2.5±0.2 0.65Max. 4.4±0.2 0.5±0.1 (1) (2) 14.5±0.5 Structure Epitaxial planar type


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    2SB1243 2SD1864. 65Max. R1010A PDF

    2SB1243

    Abstract: 2SB1184 2SD1760 2SD1864
    Text: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


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    2SB1184 2SB1243 2SB1184 65Max. 2SD1760 2SD1864. SC-63 R1010A 2SB1243 2SD1864 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


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    2SB1184 2SB1243 2SB1184 65Max. 2SD1760 2SD1864. SC-63 R1010A 2SB1243 2SD1864 PDF

    2SB1185

    Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
    Text: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


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    2SB1184 2SB1243 2SB1185 2SD1760 2SD1864 2SD1762. 96-128-B57) 2SB1185 hFE is transistor 2SD1762 96-128-B57 power transistor 3A transistor 2SB1243 PDF

    2SD1760

    Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
    Text: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


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    2SD1760 2SD1864 2SD1762 2SB1184 2SB1243 2SB1185. 96-214-D57) 2SD1762 2SB1185 96214 2sb118 Transistor npn PDF

    2SB1243

    Abstract: 2SD1864
    Text: Power Transistor 50V, 3A 2SD1864 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243. 2SD1864 2.5±0.2 0.65Max. 0.5±0.1 (1) (2) 4.4±0.2 14.5±0.5 Structure Epitaxial planar type


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    2SD1864 2SB1243. 65Max. R1010A 2SB1243 2SD1864 PDF

    TRANSISTOR D400

    Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)


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    2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V PDF

    2sb1243 TRANSISTOR

    Abstract: No abstract text available
    Text: 2SB1243 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE(sat) = -0.5 V at • complementary pair with 2SD1864 2SB1243 (ATV TV2) lc/lB = -2 A /-0 .2A Applications • medium power amplifier


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    2SB1243 2SD1864 2SB1243 2sb1243 TRANSISTOR PDF

    1 w NPN EPITAXIAL PLANAR TYPE

    Abstract: 2SD1760 2SD1864
    Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760/2SD1864 •Features •E xternal dimensions (Unite : mm) 1 ) LOW VcE(sal). 2SD1760 VcE(sai) = 0 .5 V (Typ.) 2SD1864 (I c/I b = 2 A / 0 . 2 A ) 2) Complements the 2SB1184 / 2SB1243. il •Structure


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    2SD1760 2SD1864 2SB118412SB1243. 2SD1760 SC-63 1 w NPN EPITAXIAL PLANAR TYPE 2SD1864 PDF

    TRANSISTOR d1760

    Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type


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    2SD1760/2SD1864/2SD1762 2SB1184/2SB1243 /2SB1185. 2SD1760 2SD1864 65Max. SC-63 2SD1762 2sd1760 2sd1864 TRANSISTOR d1760 TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1762 transistor 1002 d1762 f g PDF

    1507M

    Abstract: AAH3 2SB1066
    Text: ROHM CO LTD 40E 0005533 D h y > V Z $ /Transistors 3 E3RHM 2SB1066M/2SB1243 T ” 2 7 -2 i "" 2 S B 1 0 6 6 M h7 > v x ^ «^W ^Jiaiiffl/M edium Power Amp. Vr>JV:V'Ji-7- Epitaxial Planar PNP Silicon Transistors 1 V cE sa t)= —0.5V(Typ.) at Ic / I b = —2 A /—0.2A


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    2SB1066M/2SB1243 1507M 2SB1066M/2SB1243 AAH3 2SB1066 PDF

    2SB1243

    Abstract: 2SB1066M 2SB1066
    Text: h 7 > v X $ /Transistors 2SB1066M 2SB1243 2SB1066M/2 SB1243 - / i s — r m pnp '> « ;= ]> h 7 > v x ^ l£ f f i ^ i i lP ïffl/Medium Power Amp. Epitaxial Planar PNP Silicon Transistors tjv • ÿf-JFi^fifcH l/'D im snsions U nit : mm • *sä 1) V c E (s a t)= — 0.5V (Typ .)


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    2SB1066M/2SB1243 2SB1066M 2SB1243 2SD1507M/2SD1864Â 2SD1507M/2SD1864. 2SB1066M -50wA -50HA U-39U 2SB1243 2SB1066 PDF

    2SB1185

    Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
    Text: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re


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    2SB1184/2SB1243/2SB1185 2SD1760/ 2SD1864/2SD1762. 2SB1184 2SB1243 SC-63 2SB1185 O-220FP SC-67 2SB1185 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185 PDF

    b1185

    Abstract: b1184 y206
    Text: Transistors Power Transistor -6 0 V, - 3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) ►External dim ensions (Units: mm) LOW VcE(sat}. VcE(sat) = —0 .5 V (Typ.) (Ic / I b 2) = - 2 A /- 0 .2 A ) Com plem ents the 2 S D 1 7 6 0 / 2 S D 1 8 6 4 /2 S D 1 7 6 2 .


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    2SB1184/2SB1243/2SB1185 96-128-B57) 2SB1184 2SB1243 2SB1185 2SB1184) 2SB1243) 2SB1185) b1185 b1184 y206 PDF

    B1066M

    Abstract: 1066M
    Text: K ~p > v 7. $ /'Tran sistors 2SB1066M 2SB1243 2S B 1066M /2S B 1243 Epitaxial Planar PNP Silicon Transistors /M edium Power Amp. • WÄ • £ U fi" ^ ;£ [l/D im e n s io n s Unit : mm 1) VcE(sat) V c E (s a t)= -0 .5 V (T y p .) (Ic / I b = ~ 2 A / - 0 . 2 A )


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    1066M 2SB1066M 2SB1243 1507M B1066M PDF

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y ^ ^ / T ransistors 2SB1066M /2SB1243 2 S B 1 0 6 6 M ^ ^ ^ ^ u - ^ p n p h 7 >vx^ O C R I O d 1 4J ^ * i'tiffl/M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistors • 9\Hi'rfiig l/D im e n s io n s U n it: mm) 1) V cE (sat)= —0.5V(Typ.)


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    2SB1066M /2SB1243 2SD1507M/2SD1864 2SD1507 --40V --10V, 2SB1243 2SB1066M/2SB1243 PDF

    B1185

    Abstract: b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185
    Text: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) VcE(sat) (Ic / I b 2) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). = —0.5V (Typ.) = -2 A /-0 .2 A ) C o m p le m e n ts th e 2 S D 1 7 6 0 / 2 S D 1 8 64 / 2 S D 1 762.


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    1184/2S B1243/2S B1185 2SB1184/2SB1243/2SB1185 O-126 O-220, 0Dlb713 O-220FN O-220FN O220FP B1185 b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185 PDF