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    2SB1375 TRANSISTOR Search Results

    2SB1375 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SB1375 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    b1375 transistor

    Abstract: B1375 b1375, transistor transistor B1375 2SB1375
    Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin


    Original     		2SB1375 2SD2012 2-10R1A b1375 transistor B1375 b1375, transistor transistor B1375 2SB1375 PDF

    b1375 transistor

    Abstract: b1375
    Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin


    Original     		2SB1375 2SD2012 b1375 transistor b1375 PDF

    b1375 transistor

    Abstract: b1375 transistor B1375 b1375, transistor 2SB1375 2SD2012
    Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin


    Original     		2SB1375 2SD2012 b1375 transistor b1375 transistor B1375 b1375, transistor 2SB1375 2SD2012 PDF

    b1375 transistor

    Abstract: B1375 b1375, transistor transistor B1375 2SB1375 B137 2SD2012
    Text: 2SB1375 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin


    Original     		2SB1375 2SD2012 b1375 transistor B1375 b1375, transistor transistor B1375 2SB1375 B137 2SD2012 PDF

    2SB1375

    Abstract: 2SD2012
    Text: Inchange Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation:


    Original     		2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012 PDF

    2SB1375

    Abstract: 2SD2012
    Text: JMnic Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2012 ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ・Collector power dissipation: PC=25W(TC=25℃)


    Original     		2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2SD2012 PDF

    2SB1375

    Abstract: 2SD2012
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1375 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A)


    Original     		2SB1375 2SD2012 -50mA 2SB1375 2SD2012 PDF

    2SB1375

    Abstract: 2sb1375 equivalent 2SD2012
    Text: SavantIC Semiconductor Product Specification 2SB1375 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 )


    Original     		2SB1375 O-220F 2SD2012 O-220F) 2SB1375 2sb1375 equivalent 2SD2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1375 TO-220 TRANSISTOR PNP 1. BASE FEATURES z High Power Dissipation: PC=25W(TC=25℃) z Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) z Collector metal(Fin)is Coverd with Mold Regin


    Original     		O-220 2SB1375 O-220 2SD2012 -50mA PDF

    2SB1375

    Abstract: 2sb1375 transistor
    Text: 2SB1375 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features — 2 3 High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 — — —


    Original     		2SB1375 O-220 O-220 2SD2012 -50mA 2sb1375 transistor PDF

    2SD2012

    Abstract: 2SB1375
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB1375 TO-220 TRANSISTOR PNP 1. BASE FEATURES z High Power Dissipation: PC=25W(TC=25℃) z Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) z Collector metal(Fin)is Coverd with Mold Regin


    Original     		O-220 2SB1375 O-220 2SD2012 -50mA 2SD2012 2SB1375 PDF

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 PDF

    2sc4793

    Abstract: 2SC2482 2SA1145 2SC2705 2sa1680 2SA1837 2sc2655 npn general purpose transistors application 2sd201
    Text: contents www search print index quit Power Devices ➔ ➔ • Standard Bipolar Transistors Medium Power Unit in mm LSTM TO-92 MOD VCEO PNP (V) 2SA1020 2SA1680 2SA1145 49.1 49.1 49.2 IC P hfE@ VCE (V) NPN 2SC2655 2SC2482 2SC4408 2SC2705 50 300 50 150 (A)


    Original     		2SA1020 2SA1680 2SA1145 2SC2655 2SC2482 2SC4408 2SC2705 O-220 2SA1837 2sc4793 npn general purpose transistors application 2sd201 PDF

    2sd2012 transistor

    Abstract: 2sd2012 2SB1375
    Text: TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features • High DC Current Gain : 100 Min. • Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) • High Power Dissipation


    Original     		2SD2012 2SB1375 2sd2012 transistor 2sd2012 2SB1375 PDF

    2SB1375

    Abstract: 2SD2012 transistor 2sd2012
    Text: 2SB1375 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • • • • Low Saturation Voltage : V^ e sat ~ —1-5V (Max.) (In = —2A, IB = -0 .2A ) High Power Dissipation : P£ = 25W (Te = 25°C)


    OCR Scan     		2SB1375 2SD2012 2SB1375 transistor 2sd2012 PDF

    2SB1375

    Abstract: 2SD2012
    Text: 2SB1375 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • • • • Low Saturation Voltage : V^ e sat ~ —1-5V (Max.) (In = —2A, IB = -0 .2 A ) High Power Dissipation : P£ = 25W (Te = 25°C)


    OCR Scan     		2SB1375 2SD2012 2SB1375 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 ì 0.3 Low Saturation Voltage : V c e sat = —1-5V (Max.) (IC = - 2 A , IB = —0.2A) High Power Dissipation : P q = 25W (Tc = 25°C)


    OCR Scan     		2SB1375 2SD2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 ì 0.3 Low Saturation Voltage : V^ e sat = —1-5V (Max.) (IC= -2 A , IB = —0.2A) High Power Dissipation : P q = 25W (Tc = 25°C)


    OCR Scan     		2SB1375 2SD2012 PDF

    2SB1375

    Abstract: 2SD2012 2sd2012 transistor
    Text: TOSHIBA 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • Low Saturation Voltage : sat “ —1-5V (Max.) (IC= —2A, IB = —0.2A) • High Power Dissipation : P0 = 25W (Te = 25°C) • Collector Metal (Fin) is Coverd with Mold Regin


    OCR Scan     		2SB1375 2SD2012 2SB1375 2SD2012 2sd2012 transistor PDF

    S2520

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 5 ^ R 1 3 7 5 mm h it • mm m mm Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 + 0.3 Low Saturation Voltage : V c e sat = —1-5V (Max.) (IC - —2A, IB ——0.2A) High Power Dissipation \ P^ —2-5W (Tc —25°C)


    OCR Scan     		2SB1375 2SD2012 S2520 PDF

    2sd2012

    Abstract: No abstract text available
    Text: i TOSHIBA TRANSISTOR ZSDZ01Z SILICON PNP TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER • High DC Current Gain : 100 MIN. • Low Saturation Voltage : VCE(sat)=1•OV(Max.)(IC=2A, Ib =0.2A) • High Power Dissipation : PC=25W (Tc=25°C) • Collector Metal (Fin) is Covered with Mold Resin


    OCR Scan     		ZSDZ01Z O-220 2SB1375 2SD2012 Tc-25-C 2sd2012 PDF

    2sk1529

    Abstract: 2sk405 2sj115 2sc3281 YTFP450 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405 YTFP150
    Text: MOS FET TRANSISTORS POWER MOS FETS -rr MOS II YTFP MAXIMUM RATINGS Application Type No. (N-Channel) (A) YTFP150 DC-DC Converter YTFP151 Motor Drive YTFP152 YTFP153 YTFP252 YTFP253 Motor Drive


    OCR Scan     		YTFP150 YTFP151 YTFP152 YTFP153 YTFP250 YTFP251 YTFP252 YTFP253 YTFP450 YTFP451 2sk1529 2sk405 2sj115 2sc3281 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405 PDF

    Untitled

    Abstract: No abstract text available
    Text: i TOSHIBA 9 Q R 1 Q7 R SILICON PNP TRIPLE DIFFUSED TYPE ZSBl375 AUDIO FREQUENCY POWER AMPLIFIER • Low Saturation Voltage : VCE sat =-1.5V(Max.) (IC=-2A, Ib =-0.2A) • High Power Dissipation : Pc=25W (Tc=25°C)


    OCR Scan     		ZSBl375 O-220 2SD2012 2SB1375 PDF

    2sd2012 transistor

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2012 Transistor Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier F e a tu re s • High DC Current Gain : 100 Min. • Low Saturation Voltage ~ ^CE (Satj = 1.0V (Max.) (Ic = 2A, lB = 0.2A) • High Power Dissipation - Pc = 25W (Tc = 25~C )


    OCR Scan     		2SD2012 2SB1375 Tc--25 2sd2012 transistor PDF