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    2SB1558 TOSHIBA Search Results

    2SB1558 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    2SB1558 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1558 TOSHIBA

    Abstract: B1558
    Text: 2SB1558 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1558 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387 Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SB1558 2SD2387 2-16C1A 2SB1558 TOSHIBA B1558

    B1558

    Abstract: 2SB1558 2SD2387 2SB1558 TOSHIBA
    Text: 2SB1558 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1558 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387 Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SB1558 2SD2387 2-16C1A B1558 2SB1558 2SD2387 2SB1558 TOSHIBA

    transistor D2387

    Abstract: D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2387 2SB1558 2-16C1A transistor D2387 D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558

    D2387

    Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2387 2SB1558 2-16C1A D2387 transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387

    D2387

    Abstract: 2SB1558 2SD2387 transistor D2387
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SD2387 2SB1558 2-16C1A D2387 2SB1558 2SD2387 transistor D2387

    Untitled

    Abstract: No abstract text available
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2387 2SB1558 2-16C1A

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2387 High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SD2387 2SB1558

    2SB1558

    Abstract: 2SD2387
    Text: TOSHIBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 55 8 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SB1558 2SD2387 2SB1558

    2SB1558

    Abstract: 2SD2387
    Text: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 t> 03.2 ±0.2 -Ú


    OCR Scan     		PDF 2SD2387 2SB1558 2SB1558 2SD2387

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 PO W ER AM PLIFIER APPLICATIONS U nit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1558 ^o 1 , /


    OCR Scan     		PDF 2SD2387 2SB1558

    2SB1558

    Abstract: 2SD2387
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 03.2 ±0.2


    OCR Scan     		PDF 2SD2387 2SB1558 2SD2387

    2SB1558

    Abstract: 2SD2387
    Text: TO SH IBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 558 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 3.2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SB1558 2SD2387 2SB1558

    2SB1558

    Abstract: 2SD2387
    Text: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • 03.2 ± 0.2 High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD2387 2SB1558 2SD2387

    2SB1558

    Abstract: 2SD2387
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1558 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 558 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2387 A. eÆ A rsi I eri n M AXIM UM RATINGS (Tc = 25°C)


    OCR Scan     		PDF 2SB1558 2SD2387 2SB1558 2SD2387

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SB1558 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SB1 558 Unit in mm 15.9MAX. High Breakdown Voltage : V£EO = —140V (Min.) Complementary to 2SD2387 ^o 1 , / — J- f / ik A 5 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SB1558 --140V 2SD2387

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER _ 2SD2387 POW ER AM PLIFIER APPLICATIONS j, Unit in nun 3.2 t 0-3 • • High Breakdown Voltage : V c e O = 140V (Min.) Complementary to 2SB1558 i= M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SD2387 2SB1558

    2sb1355

    Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
    Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^


    OCR Scan     		PDF 2SR562 2SB1329 2SA1706 2SB1433 2SB1517 2SA1707 2SA1708 2SB1459 2SB1332 2sb1355 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266