TRANSISTOR B1640
Abstract: No abstract text available
Text: 2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 (IC = −2 A, IB = −0.2 A)
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2SB1640
2SD2525
TRANSISTOR B1640
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TRANSISTOR D2525
Abstract: D2525 2SD2525 2SB1640
Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) · Complementary to 2SB1640
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2SD2525
2SB1640
TRANSISTOR D2525
D2525
2SD2525
2SB1640
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TRANSISTOR D2525
Abstract: 2sd2525 2SB1640 D2525
Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640
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2SD2525
2SB1640
TRANSISTOR D2525
2sd2525
2SB1640
D2525
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TRANSISTOR D2525
Abstract: D2525 2SB1640 2SD2525
Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640
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2SD2525
2SB1640
TRANSISTOR D2525
D2525
2SB1640
2SD2525
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2SB1640
Abstract: 2SD2525
Text: TO SH IBA 2SB1640 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 640 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • • • Low Saturation Voltage : V^ e sat - —1-5V (Max.) (In = —2A, IB = -0 .2 A ) Collector Metal (Fin) is Covered with Mold Region
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2SB1640
2SD2525
2SB1640
2SD2525
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Untitled
Abstract: No abstract text available
Text: 2SB1640 TOSHIBA TOSHIBA TRANSISTOR 2 SILICON PNP TRIPLE DIFFUSED TYPE S B 1 6 4 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER • Low Saturation Voltage : V q e sat ——1-5V (Max.) (IC - —2A, IB ——0.2A) Collector Metal (Fin) is Covered with Mold Region
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2SB1640
2SD2525
2-10T1A
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2SB1640
Abstract: 2SD2525 ITO-220
Text: JMnic Product Specification 2SB1640 Silicon PNP Power Transistors DESCRIPTION ・With ITO-220 package ・Low collector saturation voltage ・Complement to type 2SD2525 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector
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2SB1640
ITO-220
2SD2525
ITO-220)
2SB1640
2SD2525
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B1640
Abstract: 2SB1640 2SD2525
Text: 2SB1640 東芝トランジスタ シリコンPNP三重拡散形 2SB1640 ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −2 A, IB = −0.2 A) • 2SD2525 とコンプリメンタリになります。
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2SB1640
2SD2525
2-10T1A
20070701-JA
B1640
2SB1640
2SD2525
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TRANSISTOR B1640
Abstract: B1640 2SB1640 2SD2525 TRANSISTOR 2SB1640
Text: 2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier • Low saturation voltage: VCE sat = −1.5 V (max) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 Unit: mm (IC = −2 A, IB = −0.2 A)
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2SB1640
2SD2525
TRANSISTOR B1640
B1640
2SB1640
2SD2525
TRANSISTOR 2SB1640
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2SB1640
Abstract: 2SD2525 ITO-220
Text: SavantIC Semiconductor Product Specification 2SB1640 Silicon PNP Power Transistors DESCRIPTION •With ITO-220 package ·Low collector saturation voltage ·Complement to type 2SD2525 APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base
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2SB1640
ITO-220
2SD2525
ITO-220)
2SB1640
2SD2525
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2SB1640
Abstract: 2SD2525 ITO-220 2SD252
Text: Inchange Semiconductor Product Specification 2SB1640 Silicon PNP Power Transistors DESCRIPTION ・With ITO-220 package ・Low collector saturation voltage ・Complement to type 2SD2525 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION
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2SB1640
ITO-220
2SD2525
ITO-220)
2SB1640
2SD2525
2SD252
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2SB1640
Abstract: 2SD2525
Text: V IJ =l > P N P H S te iii 2SB1640 2S81640 : v C E (sat) = - 1 .5 V (f t^ C )( I c = -2 A , I ß = - 0 .2 A ) 2SD2525 t z > 7’ ’) j< > ? V IZ Ù *7 i t o • (Ta = 25°C) m a U7 ÿ ^ a X ri 1 J± 3 1/ ÿ ? . i = ? P a J I f t i 5 7 ? • ^ - X Psi Ü J ±
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2SB1640
2S81640)
2SD2525
2-10T1A
-50mA,
2SB1640
2SD2525
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transistor
Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N
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2SD1160
2SD1140
2SD1224
2SD1508
2SD1631
2SD1784
2SD2481
2SB907
2SD1222
2SD1412A
transistor
power transistor npn to-220
PNP POWER TRANSISTOR TO220
transistor PNP
damper diode
Darlington transistor
2SD2206A
power transistor
npn darlington
transistor TO220
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D2525
Abstract: 2SD2525 2SB1640
Text: 2SD2525 東芝トランジスタ シリコンNPN三重拡散形 2SD2525 ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。: VCE sat = 0.4 V (標準) (IC = 2 A, IB = 0.2 A) • 2SB1640 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)
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2SD2525
2SB1640
2-10T1A
20070701-JA
D2525
2SD2525
2SB1640
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TRANSISTOR D2525
Abstract: d2525 2sd2525 2SB1640
Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640
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2SD2525
2SB1640
TRANSISTOR D2525
d2525
2sd2525
2SB1640
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Untitled
Abstract: No abstract text available
Text: 2SB1640 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER Unit in mm AUDIO FREQUENCY PO W ER AMPLIFIER. • • • Low Saturation Voltage : V q e (sat)= —1.5V (Max.) (IC = -2 A , IB = —0.2A) Collector Metal (Fin) is Covered with Mold Region Complementary to 2SD2525
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2SB1640
2SD2525
2-10T1A
--60V,
--50mA,
--10V,
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SB1640 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 640 AUDIO FREQUENCY PO W ER AM PLIFIER Unit in mm • Low Saturation Voltage : V^ e sat = —1-5V (Max.) (IC = - 2 A , IB = —0.2A) • Collector Metal (Fin) is Covered with Mold Region
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2SB1640
2SD2525
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TRANSISTOR D2525
Abstract: 2sd2525
Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640
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2SD2525
2SB1640
2-10T1A
TRANSISTOR D2525
2sd2525
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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